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Featured researches published by S.S. Shenouda.


Philosophical Magazine | 2015

Investigation of solid-state reaction in Ag/Sn nanostructured thin films at room temperature

N. Samy; S.S. Shenouda; M. Fadel; H. Talaat; G.L. Katona; G.A. Langer; A. Csik; Dezső L. Beke

Diffusion intermixing processes in nanostructured Ag/Sn thin-film system at room temperature were investigated by means of secondary neutral mass Spectrometry depth profiling technique. As it was confirmed by X-ray diffraction too, the reaction started already in the as-deposited sample. Since the bulk diffusion was frozen at room temperature, the Ag3Sn phase was formed along the grain boundaries (GBs), gradually consuming the interior of grains, and was grown perpendicular to the GBs. At the same time, formation and growth of a small compact reaction layer near the interface were observed and the shift of the bordering parallel interfaces was controlled by GB diffusion. From the kinetics of the diffusion process in the above two mechanisms, both the interface velocity in the diffusion-induced grain boundary motion regime as well as the coefficient of parabolic growth in the planar growth regime were determined.


Beilstein Journal of Nanotechnology | 2016

Determination of the compositions of the DIGM zone in nanocrystalline Ag/Au and Ag/Pd thin films by secondary neutral mass spectrometry

Gábor Y Molnár; S.S. Shenouda; G.L. Katona; G.A. Langer; Dezső L. Beke

Summary Alloying by grain boundary diffusion-induced grain boundary migration is investigated by secondary neutral mass spectrometry depth profiling in Ag/Au and Ag/Pd nanocrystalline thin film systems. It is shown that the compositions in zones left behind the moving boundaries can be determined by this technique if the process takes place at low temperatures where solely the grain boundary transport is the contributing mechanism and the gain size is less than the half of the grain boundary migration distance. The results in Ag/Au system are in good accordance with the predictions given by the step mechanism of grain boundary migration, i.e., the saturation compositions are higher in the slower component (i.e., in Au or Pd). It is shown that the homogenization process stops after reaching the saturation values and further intermixing can take place only if fresh samples with initial compositions, according to the saturation values, are produced and heat treated at the same temperature. The reversal of the film sequence resulted in the reversal of the inequality of the compositions in the alloyed zones, which is in contrast to the above theoretical model, and explained by possible effects of the stress gradients developed by the diffusion processes itself.


Journal of Alloys and Compounds | 2011

Analysis of current–voltage characteristics of Al/p-ZnGa2Se4/n-Si nanocrystalline heterojunction diode

I.S. Yahia; M. Fadel; G.B. Sakr; F. Yakuphanoglu; S.S. Shenouda; W. A. Farooq


Journal of Alloys and Compounds | 2010

Memory switching of ZnGa2Se4 thin films as a new material for phase change memories (PCMs)

I.S. Yahia; M. Fadel; G.B. Sakr; S.S. Shenouda


Journal of Materials Science | 2012

Effect of the frequency and temperature on the complex impedance spectroscopy (C–V and G–V) of p-ZnGa2Se4/n-Si nanostructure heterojunction diode

I.S. Yahia; M. Fadel; G.B. Sakr; S.S. Shenouda; F. Yakuphanoglu


Optics Communications | 2012

Structure, optical spectroscopy and dispersion parameters of ZnGa2Se4 thin films at different annealing temperatures

M. Fadel; I.S. Yahia; G.B. Sakr; F. Yakuphanoglu; S.S. Shenouda


Applied Surface Science | 2014

Production of NiSi phase by grain boundary diffusion induced solid state reaction between Ni2Si and Si(1 0 0) substrate

S.S. Shenouda; G.A. Langer; G.L. Katona; Lajos Daróczi; A. Csik; D.L. Beke


Applied Physics A | 2013

Negative capacitance of ZnGa2Se4/Si nano-heterojunction diode

I.S. Yahia; G.B. Sakr; S.S. Shenouda; M. Fadel; S.S. Fouad; F. Yakuphanoglu


Microelectronics Reliability | 2016

Formation of Cu6Sn5 phase by cold homogenization in nanocrystalline Cu–Sn bilayers at room temperature

H. Zaka; S.S. Shenouda; S.S. Fouad; M. Medhat; G.L. Katona; A. Csik; G.A. Langer; Dezső L. Beke


Microelectronic Engineering | 2015

Kinetics of shift of individual interfaces in Ni/Si system during low temperature reactions

S.S. Shenouda; Gábor Y Molnár; G.A. Langer; G.L. Katona; F. Kristály; Dezső L. Beke

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M. Fadel

Ain Shams University

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G.A. Langer

University of Debrecen

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G.L. Katona

University of Debrecen

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I.S. Yahia

King Khalid University

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A. Csik

Hungarian Academy of Sciences

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D.L. Beke

University of Debrecen

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