S. Sh. Makhmudov

Fabrication and properties of an n-ZnO:Ga/p-GaN:Mg/α-Al2O3 heterojunction

The first results of growing ZnO/GaN/α-Al2O3 heteroepitaxial structures in a low-pressure flow-through reactor using chemical-vapor deposition and stimulation with a plasma of radio-frequency discharge are reported. Activation of reactants in the course of growth made it possible to significantly increase the effective pressure of atomic oxygen in the reactor, considerably reduce the temperature of epitaxy, improve the morphological and structural parameters of ZnO layers, and form a n-ZnO:Ga/p-GaN:Mg/α-Al2O3 heterojunction.

Method for manufacturing zinc oxide nanowhisker arrays

Arrays of zinc oxide (ZnO) nanowhskers oriented perpendicularly to the surface of a substrate have been obtained by explosive laser evaporation of ZnO target on (0001)-oriented sapphire and unoriented silica, glass ceramic composite (Polycor), and glass substrates with magnetron-deposited ZnO sublayers layers. X-ray diffractograms of the nanowhisker arrays have been measured and features of their exciton luminescence have been studied.

On the possibility of ZnO-based quasi-bicrystal structure preparation

We present the first results of the two-step growth of the quasi-bicrystal structures containing interblock boundaries in epitaxial zinc oxide layers on α-sapphire. Using the intermediate buffer layer technique we have successfully prepared highly oriented layers of (110)ZnO and (0001)ZnO with clearly pronounced boundaries between blocks on the same (102)Al2O3 substrate surface. The high quality of the quasi-bicrystal structures was confirmed by x-ray diffraction and reflected high-energy electron diffraction measurements.

Controlled Growth of Quasibicrystal Zinc Oxide Structures

AbstractThe first results on the controlled growth of quasibicrystal structures containing interblock boundaries in epitaxial zinc oxide layers on sapphire (α-Al2O3) are reported. The structures with boundaries oriented in a preset direction can be used as a base for submicron microelectronic devices. Using the method of buffer layers, it is possible to obtain highly oriented layers of

Fabrication and some properties of ZnO/A IIIN heterojunctions

(11\bar 20)ZnO

Heteroepitaxial ZnO/6H-SiC structures fabricated by chemical vapor deposition

and (0001)ZnO with clear boundaries between blocks on the same

Thin Film Systems Based on ZnO/SiC and ZnO/C

(10\bar 12)Al_2 O_3