S. Stöckel
Chemnitz University of Technology
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Featured researches published by S. Stöckel.
Thin Solid Films | 2002
S. Stöckel; K Weise; Dagmar Dietrich; T Thamm; M Braun; Rainer Cremer; Dieter Neuschütz; G. Marx
BCN films were deposited by isothermal chemical vapour deposition from gaseous mixtures of trimethylborazine, toluene and ammonia. The films were analysed with respect to chemical state, composition, morphology and microstructure on the one side oxidation behaviour and hardness on the other side. X-ray spectroscopy (WDX), Raman and infrared spectroscopy, differential thermal analysis, X-ray diffraction and transmission electron spectroscopy were employed for film characterization. A microhardness of maximum 20 GPa was achieved, affected by carbon content, by the way of its incorporation into the hexagonal turbostratic lattice as well as by the crystallite size and its texture.
Journal of The European Ceramic Society | 2000
Eckhard Pippel; J. Woltersdorf; Dagmar Dietrich; S. Stöckel; K. Weise; G. Marx
Abstract Boron nitride is isoelectronic with graphite, has a similar bonding structure, but a stronger localization of the π-states, and a better oxidation resistance. Therefore, it is a promising alternative to pyrolytic carbon as a tool for tayloring special fibre/matrix interlayers in composites for gas turbine and aircraft applications. To understand the CVD processing via a boron-organic precursor and to improve the thermomechanical and hydrolytic stability of the BN fibre coatings, we focussed our investigations on the question: “In what way do carbon and oxygen become incorporated into the BN layer?” HREM studies showed the turbostratic structure of the BN, forming cells of 5–10 nm in diameter. Energy filtered electron microscopy (EFTEM) and the nanometre resolved analysis of the electron energy-loss near edge structure (ELNES) of the individual elements revealed a correlation between microstructure and chemical composition. There is a general deficiency of 10–15% of nitrogen with respect to boron, which is partly compensated for by contents of up to 10 and 15% of oxygen and carbon, respectively, in the layer. It could be concluded that most of the carbon is precipitated in between the BN cells, and a smaller amount is incorporated within the hexagonal BN structure.
Physical Chemistry Chemical Physics | 2001
T. Thamm; W. Baumann; Dagmar Dietrich; N. Meyer; S. Stöckel; G. Marx
Hexagonal boron nitride films on Si(100) substrates are formed from the system N2/B(OCH3)3 (TMOB) by microwave plasma enhanced chemical vapour deposition (PECVD). The parameters substrate temperature, deposition time and composition of the process gas mixture were varied. The stability of the deposited layers mainly depends on the substrate temperature during the deposition process. Layers formed below 650°C showed strong decomposition features by contact with air humidity. Above this temperature very stable layers could be produced. This was confirmed by hydrolysis tests. The structural growth of the boron nitride layers was investigated by means of transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). Three different growth zones were observed within the layers. The composition was determined by electron probe microanalysis (EPMA) and elastic recoil detection analysis (ERDA). Infrared and Raman spectroscopy were used for qualitative investigation of the BN layers.
Materials Chemistry and Physics | 2007
F. Reischer; Eckhard Pippel; J. Woltersdorf; S. Stöckel; G. Marx
Applied Surface Science | 2005
Thomas Thamm; K.-U. Körner; Wolfgang Bohne; E. Strub; J. Röhrich; S. Stöckel; G. Marx
Fresenius Journal of Analytical Chemistry | 1998
Dagmar Dietrich; S. Stöckel; G. Marx
Chemical Vapor Deposition | 2007
S. Stöckel; G. Marx; Werner A. Goedel
Analytical and Bioanalytical Chemistry | 2003
S. Stöckel; K. Weise; T. Thamm; K.-U. Körner; Dagmar Dietrich; G. Marx
Analytical and Bioanalytical Chemistry | 2002
Dagmar Dietrich; Ulrich Roll; S. Stöckel; K. Weise; G. Marx
Fresenius Journal of Analytical Chemistry | 1999
Dagmar Dietrich; S. Stöckel; K. Weise; K. Nestler; G. Marx