S.V. Zvonarev

Terbium luminescence in alumina xerogel fabricated in porous anodic alumina matrix under various excitation conditions

Terbium-doped alumina xerogel layers are synthesized by the sol-gel method in pores of a porous anodic alumina film 1 μm thick with a pore diameter of 150–180 nm; the film is grown on a silicon substrate. The fabricated structures exhibit terbium photoluminescence with bands typical of trivalent terbium terms. Terbium X-ray luminescence with the most intense band at 542 nm is observed for the first time for such a structure. Morphological analysis of the structure by scanning electron microscopy shows the presence of xerogel clusters in pore channels, while the main pore volume remains unfilled and pore mouths remain open. The data obtained confirm the promising applications of fabricated structures for developing matrix converters of X-rays and other ionizing radiations into visible light. The possibilities of increasing luminescence intensity in the matrix converter are discussed.

Photo- and cathodoluminescence of strontium titanate xerogel films doped with terbium ions

Terbium-doped strontium titanate thin films are synthesized via the sol–gel method. The xerogel is deposited onto single-crystal silicon and porous anodic alumina substrates formed on single-crystal silicon. The structure and phase composition of the films are studied. The strontium titanate xerogel on single-crystal silicon exhibits a photoluminescence spectrum with a selective terbium emission band that is difficult to identify. The photoand cathodoluminescence spectra of the xerogel in porous matrices contain emission bands due to the electronic transitions of trivalent terbium.