S. Van Aert

Quantitative atomic resolution mapping using high-angle annular dark field scanning transmission electron microscopy

A model-based method is proposed to relatively quantify the chemical composition of atomic columns using high angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) images. The method is based on a quantification of the total intensity of the scattered electrons for the individual atomic columns using statistical parameter estimation theory. In order to apply this theory, a model is required describing the image contrast of the HAADF STEM images. Therefore, a simple, effective incoherent model has been assumed which takes the probe intensity profile into account. The scattered intensities can then be estimated by fitting this model to an experimental HAADF STEM image. These estimates are used as a performance measure to distinguish between different atomic column types and to identify the nature of unknown columns with good accuracy and precision using statistical hypothesis testing. The reliability of the method is supported by means of simulated HAADF STEM images as well as a combination of experimental images and electron energy-loss spectra. It is experimentally shown that statistically meaningful information on the composition of individual columns can be obtained even if the difference in averaged atomic number Z is only 3. Using this method, quantitative mapping at atomic resolution using HAADF STEM images only has become possible without the need of simultaneously recorded electron energy loss spectra.

Advanced three-dimensional electron microscopy techniques in the quest for better structural and functional materials

Abstract After a short review of electron tomography techniques for materials science, this overview will cover some recent results on different shape memory and nanostructured metallic systems obtained by various three-dimensional (3D) electron imaging techniques. In binary Ni–Ti, the 3D morphology and distribution of Ni4Ti3 precipitates are investigated by using FIB/SEM slice-and-view yielding 3D data stacks. Different quantification techniques will be presented including the principal ellipsoid for a given precipitate, shape classification following a Zingg scheme, particle distribution function, distance transform and water penetration. The latter is a novel approach to quantifying the expected matrix transformation in between the precipitates. The different samples investigated include a single crystal annealed with and without compression yielding layered and autocatalytic precipitation, respectively, and a polycrystal revealing different densities and sizes of the precipitates resulting in a multistage transformation process. Electron tomography was used to understand the interaction between focused ion beam-induced Frank loops and long dislocation structures in nanobeams of Al exhibiting special mechanical behaviour measured by on-chip deposition. Atomic resolution electron tomography is demonstrated on Ag nanoparticles in an Al matrix.

Controlled lateral anisotropy in correlated manganite heterostructures by interface-engineered oxygen octahedral coupling

Controlled in-plane rotation of the magnetic easy axis in manganite heterostructures by tailoring the interface oxygen network could allow the development of correlated oxide-based magnetic tunnelling junctions with non-collinear magnetization, with possible practical applications as miniaturized high-switching-speed magnetic random access memory (MRAM) devices. Here, we demonstrate how to manipulate magnetic and electronic anisotropic properties in manganite heterostructures by engineering the oxygen network on the unit-cell level. The strong oxygen octahedral coupling is found to transfer the octahedral rotation, present in the NdGaO3 (NGO) substrate, to the La2/3Sr1/3MnO3 (LSMO) film in the interface region. This causes an unexpected realignment of the magnetic easy axis along the short axis of the LSMO unit cell as well as the presence of a giant anisotropic transport in these ultrathin LSMO films. As a result we possess control of the lateral magnetic and electronic anisotropies by atomic-scale design of the oxygen octahedral rotation.

Optimized fabrication of high-quality La0.67Sr0.33MnO3 thin films considering all essential characteristics

In this paper, an overview of the fabrication and properties of high-quality La0.67Sr0.33MnO3 (LSMO) thin films is given. A high-quality LSMO film combines a smooth surface morphology with a large magnetization and a small residual resistivity, while avoiding precipitates and surface segregation. In the literature, typically only a few of these issues are adressed. We therefore present a thorough characterization of our films, which were grown by pulsed laser deposition. The films were characterized with reflection high energy electron diffraction, atomic force microscopy, x-ray diffraction, magnetization and transport measurements, x-ray photoelectron spectroscopy and scanning transmission electron microscopy. The films have a saturation magnetization of 4.0 µB/Mn, a Curie temperature of 350 K and a residual resistivity of 60 µΩ cm. These results indicate that high-quality films, combining both large magnetization and small residual resistivity, were realized. A comparison between different samples presented in the literature shows that focussing on a single property is insufficient for the optimization of the deposition process. For high-quality films, all properties have to be adressed. For LSMO devices, the thin-film quality is crucial for the device performance. Therefore, this research is important for the application of LSMO in devices.

Resolution of coherent and incoherent imaging systems reconsidered - Classical criteria and a statistical alternative

The resolution of coherent and incoherent imaging systems is usually evaluated in terms of classical resolution criteria, such as Rayleigh’s. Based on these criteria, incoherent imaging is generally concluded to be ‘better’ than coherent imaging. However, this paper reveals some misconceptions in the application of the classical criteria, which may lead to wrong conclusions. Furthermore, it is shown that classical resolution criteria are no longer appropriate if images are interpreted quantitatively instead of qualitatively. Then one needs an alternative criterion to compare coherent and incoherent imaging systems objectively. Such a criterion, which relates resolution to statistical measurement precision, is proposed in this paper. It is applied in the field of electron microscopy, where the question whether coherent high resolution transmission electron microscopy (HRTEM) or incoherent annular dark field scanning transmission electron microscopy (ADF STEM) is preferable has been an issue of considerable debate.

Atom counting in HAADF STEM using a statistical model-based approach: Methodology, possibilities, and inherent limitations

In the present paper, a statistical model-based method to count the number of atoms of monotype crystalline nanostructures from high resolution high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) images is discussed in detail together with a thorough study on the possibilities and inherent limitations. In order to count the number of atoms, it is assumed that the total scattered intensity scales with the number of atoms per atom column. These intensities are quantitatively determined using model-based statistical parameter estimation theory. The distribution describing the probability that intensity values are generated by atomic columns containing a specific number of atoms is inferred on the basis of the experimental scattered intensities. Finally, the number of atoms per atom column is quantified using this estimated probability distribution. The number of atom columns available in the observed STEM image, the number of components in the estimated probability distribution, the width of the components of the probability distribution, and the typical shape of a criterion to assess the number of components in the probability distribution directly affect the accuracy and precision with which the number of atoms in a particular atom column can be estimated. It is shown that single atom sensitivity is feasible taking the latter aspects into consideration.

Quantitative composition determination at the atomic level using model-based high-angle annular dark field scanning transmission electron microscopy.

High angle annular dark field scanning transmission electron microscopy (HAADF STEM) images provide sample information which is sensitive to the chemical composition. The image intensities indeed scale with the mean atomic number Z. To some extent, chemically different atomic column types can therefore be visually distinguished. However, in order to quantify the atomic column composition with high accuracy and precision, model-based methods are necessary. Therefore, an empirical incoherent parametric imaging model can be used of which the unknown parameters are determined using statistical parameter estimation theory (Van Aert et al., 2009, [1]). In this paper, it will be shown how this method can be combined with frozen lattice multislice simulations in order to evolve from a relative toward an absolute quantification of the composition of single atomic columns with mixed atom types. Furthermore, the validity of the model assumptions are explored and discussed.

Optimal experimental design of STEM measurement of atom column positions

A quantitative measure is proposed to evaluate and optimize the design of a high-resolution scanning transmission electron microscopy (STEM) experiment. The proposed measure is related to the measurement of atom column positions. Specifically, it is based on the statistical precision with which the positions of atom columns can be estimated. The optimal design, that is, the combination of tunable microscope parameters for which the precision is highest. is derived for different types of atom columns. The proposed measure is also used to find out if an annular detector is preferable to an axial one and if a C(s)-corrector pays off in quantitative STEM experiments. In addition, the optimal settings of the STEM are compared to the Scherzer conditions for incoherent imaging and their dependence on the type of object is investigated.

High-resolution electron microscopy and electron tomography: resolution versus precision.

The performance of high-resolution electron microscopy and electron tomography is usually discussed in terms of two-point resolution, expressing the possibility of perceiving separately two image points of an object. However, the concept resolution obtains another meaning if one uses prior knowledge about the object and the imaging procedure in the form of a parametric model describing the expectations of the observations. The unknown parameters, such as the positions of the components in an object, can be measured quantitatively by fitting this model to the observations. Due to the statistical nature of the experiment, the resulting solutions for the positions of the components and therefore for the distance between the components will never be exact. An alternative to resolution is then the precision with which the distance can be measured. In the present paper, it is shown that the precision depends on the size of the components, the distance between the components, the resolution of the instrument, and the number of electron counts. For electron tomography, it also depends on the orientation of the object with respect to the rotation axis.

Is atomic resolution transmission electron microscopy able to resolve and refine amorphous structures

Atomic resolution transmission electron microscopy, even with an aberration free microscope, is only able to resolve and refine amorphous structures at the atomic level for very small foil thicknesses. Then, a precision of the order of 0.01 A is possible, but this may require long recording times, especially for light atoms. For larger thicknesses, amorphous structures can in principle only be resolved and refined using electron tomography.