Saisai Chu

A Facile One‐step Method to Produce Graphene–CdS Quantum Dot Nanocomposites as Promising Optoelectronic Materials

[*] Prof. A. Cao, Z. Liu, Prof. M. Wu, Z. Ye, Z. Cai, Y. Chang, Prof. Y. Liu Institute of Nanochemistry and Nanobiology Shanghai University, Shanghai, 200444 (P. R. China) E-mail: ancao@shu.edu.cn Prof. S. Wang, S. Chu, Prof. Q. Gong State Key Laboratory for Mesoscopic Physics, School of Physics Peking University, Beijing, 100871 (P. R. China) E-mail: wangsf@pku.edu.cn Prof. Y. Liu Beijing National Laboratory of Molecular Science College of Chemistry and Molecular Engineering Peking University, Beijing, 100871 (P. R. China) E-mail: yliu@pku.edu.cn

Study on the third and second-order nonlinear optical properties of GeS(2)-Ga(2)S 3 -AgCl chalcohalide glasses.

Third-order optical nonlinearities, chi((3)) of GeS(2)-Ga(2)S(3)-AgCl chalcohalide glasses have been studied systematically utilizing the femtosecond time-resolved optical Kerr effect (OKE) technique at 820nm, showing that the value of chi((3)) enhances with increasing atomic ratio of (S+Cl/2)/(Ge+Ga). From the compositional dependence of glass structure by Raman spectra, a strong dependence of chi;(3) upon glass structure has been found, i.e. compared with [Cl(x)S(3-x)Ge(Ga)-Ge(Ga)S(3-x)Cl(x)] ethane-like s.u. as the structural defectiveness, [Ge(Ga)S(4-x)Cl(x)] mixed tetrahedra make greater contribution to the enhancement of chi((3)). The maximum chi(3) among the present glasses is as large as 5.26x10(-13)esu (A1 (80GeS(2)-10Ga(2)S(3-) 10AgCl)), and the nonlinear refractive index (n2) of A1 glass is also up to 4.60x10(-15) cm(2)/W. In addition, using Maker fringe technique, SHG was observed in the representative A1 glass poled by electron beam (25 kV, 25 nA, 15 min), and the second-order optical nonlinear susceptibility is estimated to be greater than 6.1 pm/V. There was no evident structural change detected in the as-prepared and after irradiated A1 glass by the Raman spectra, and maybe only electronic transition and distortion of electron cloud occurred in the glasses. The large third/second-order optical nonlinearities have made these GeS(2)-Ga(2)S(3)-AgCl chalcohalide glasses as promising materials applied in photoelectric fields.

Tuning the photo-response in monolayer MoS2 by plasmonic nano-antenna.

Monolayer molybdenum disulfide (MoS2) has recently attracted intense interests due to its remarkable optical properties of valley-selected optical response, strong nonlinear wave mixing and photocurrent/photovoltaic generation and many corresponding potential applications. However, the nature of atomic-thin thickness of monolayer MoS2 leads to inefficient light-matter interactions and thereby hinders its optoelectronic applications. Here we report on the enhanced and controllable photo-response in MoS2 by utilizing surface plasmonic resonance based on metallic nano-antenna with characteristic lateral size of 40 × 80 nm. Our nano-antenna is designed to have one plasmonic resonance in the visible range and can enhance the MoS2 photoluminescence intensity up to 10 folds. The intensity enhancement can be effectively tuned simply by the manipulation of incident light polarization. In addition, we can also control the oscillator strength ratio between exciton and trion states by controlling polarization dependent hot carrier doping in MoS2. Our results demonstrate the possibility in controlling the photo-response in broad two-dimensional materials by well-designed nano-antenna and facilitate its coming optoelectronic applications.

Low-dimensional materials-based field-effect transistors

As Moores law predicted, field-effect transistors (FETs) have been decreasing in size for several decades. In the process, these devices have suffered considerably from short-channel effects and surface instabilities. Low-dimensional materials, such as 0D quantum dots, 1D nanowires and nanotubes, and 2D nanosheets, would be helpful in the device downscaling process while also enhancing device performance, and have therefore been widely applied in many recently designed FETs. Since the 1990s, more than five million studies related to low-dimensional materials-based FETs have been published. In this article, a universal framework is provided to describe the recent progress in this advanced field and it includes discussions of novel materials, new device configurations and the wide variety of device applications.

Optimizing single-nanoparticle two-photon microscopy by in situ adaptive control of femtosecond pulses

Single-nanoparticle two-photon microscopy shows great application potential in super-resolution cell imaging. Here, we report in situ adaptive optimization of single-nanoparticle two-photon luminescence signals by phase and polarization modulations of broadband laser pulses. For polarization-independent quantum dots, phase-only optimization was carried out to compensate the phase dispersion at the focus of the objective. Enhancement of the two-photon excitation fluorescence intensity under dispersion-compensated femtosecond pulses was achieved. For polarization-dependent single gold nanorod, in situ polarization optimization resulted in further enhancement of two-photon photoluminescence intensity than phase-only optimization. The application of in situ adaptive control of femtosecond pulse provides a way for object-oriented optimization of single-nanoparticle two-photon microscopy for its future applications.

Polarization-dependent photocurrent in MoS2 phototransistor

Monolayer or few-layer molybdenum disulfide (MoS2) has attracted increasing interests in studying light-induced electronic effect due to its prominent photo-responsivity at visible spectral range, fast photo-switching rate and high channel mobility. However, the atomically thin layers make the interaction between light and matter much weaker than that in bulk state, hampering its application in two-dimensional material optoelectronics. One of recent efforts was to utilize resonantly enhanced localized surface plasmon for boosting light-matter interaction in MoS2 thin layer phototransistor. Randomly deposited metallic nano-particles were previously reported to modify surface of a back-gated MoS2 transistor for increasing light absorption cross-section of the phototransistor. Wavelength-dependent photocurrent enhancement was observed. In this paper, we report on a back-gated multilayer MoS2 field-effect-transistor (FET), whose surface is decorated with oriented gold nanobar array, of which the size of a single nanobar is 60nm:60nm:120nm. With these oriented nanostructures, photocurrent of the MoS2 FET could be successfully manipulated by a linear polarized incident 633nm laser, which fell into the resonance band of nanobar structure. We find that the drain-source current follows cos2θ relationship with respect to the incident polarization angle. We attribute the polarization modulation effect to the localized enhancement nature of gold nanobar layer, where the plasmon enhancement occurs only when the polarization of incident laser parallels to the longitudinal axis of nanobars and when the incident wavelength matches the resonance absorption of nanobars simultaneously. Our results indicate a promising application of polarization-dependent plasmonic manipulation in two-dimension semiconductor materials and devices.