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Dive into the research topics where Salahuddin Khan is active.

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Featured researches published by Salahuddin Khan.


Applied Physics Letters | 2009

Transient absorption and higher-order nonlinearities in silver nanoplatelets

J. Jayabalan; Asha Singh; Rama Chari; Salahuddin Khan; Himanshu Srivastava; S. M. Oak

We show that the imaginary parts of higher-order optical nonlinearities and their decay times can be determined by a time-intensity domain analysis of the conventional transient absorption data. Using this method we have measured the values and decay times of third, fifth and seventh-order nonlinear susceptibilities of silver nanoplatelets in water. The origin of these higher-order nonlinearities is explained using a two-temperature model.


Applied Physics Letters | 2014

Quantum beats from the coherent interaction of hole states with surface state in near-surface quantum well

Salahuddin Khan; J. Jayabalan; Rama Chari; Suparna Pal; S. Porwal; T. K. Sharma; S. M. Oak

We report tunneling assisted beating of carriers in a near-surface single GaAsP/AlGaAs quantum well using transient reflectivity measurement. The observed damped oscillating signal has a period of 120 ± 6 fs which corresponds to the energy difference between lh1 and hh2 hole states in the quantum well. Comparing the transient reflectivity signal at different photon energies and with a buried quantum well sample, we show that the beating is caused by the coherent coupling between surface state and the hole states (lh1 and hh2) in the near-surface quantum well. The dependence of decay of coherence of these tunneling carriers on the excitation fluence is also reported. This observation on the coherent tunneling of carrier is important for future quantum device applications.


Semiconductor Science and Technology | 2013

Effect of light-hole tunnelling on the excitonic properties of GaAsP/AlGaAs near-surface quantum wells

Suparna Pal; S. D. Singh; S. Porwal; T. K. Sharma; Salahuddin Khan; J. Jayabalan; Rama Chari; S. M. Oak

Light-hole tunnelling to the surface states is studied using photoluminescence (PL) spectroscopy and transient reflectivity measurements in the tensile-strained GaAsP/AlGaAs near-surface quantum well (NSQW) samples by reducing the top barrier layer thickness from 275 to 5 nm. The ground state transition (e1–lh1) remains excitonic even at room temperature (RT) for a buried quantum well sample with 275 nm thick top barrier. When the top barrier thickness is reduced to 50 nm the same transition is found to be excitonic only at low temperatures but changes to free-carrier recombination at higher temperatures. When the top barrier layer thickness is further reduced to 5 nm, the ground state transition is no longer excitonic in nature, where it shows free-carrier behaviour even at 10 K. We therefore find a clear relationship between the character of the ground state transition and the top barrier layer thickness. Light-hole excitons cannot be formed in NSQW samples when the top barrier layer thickness is kept reasonably low. This is attributed to the quantum mechanical tunnelling of free light holes to the surface states, which is found to be faster than the exciton formation process. A tunnelling time of ~500 fs for light holes is measured by the transient reflectivity measurements for the NSQW sample with a 5 nm top barrier. On the other hand, heavy-hole-related transitions in NSQW samples are found to be of excitonic nature even at RT because of the relatively large tunnelling time. It supports the dominance of excited state feature over the ground state transition in PL measurements at temperatures higher than 150 K.


Journal of Optics | 2013

Volume fraction dependence of transient absorption signal and nonlinearities in metal nanocolloids

J. Jayabalan; Asha Singh; Salahuddin Khan; Rama Chari

Electron?lattice thermalization dynamics in metal nanoparticles or in bulk metal is usually estimated by measuring the decay time of the change in transmission following an optical excitation. Such measurements can be performed in transient absorption geometry using a femtosecond laser. We find that for silver nanoplatelet/water colloids, the decay time of the transient absorption depends on the volume fraction of silver in water. By estimating the volume fraction dependence of nonlinearities in the same samples, we show that the variation in the measured decay time is due to pump-depletion effects present in the sample. The correct correction factor for taking into account pump-depletion effects in fifth- and higher-order nonlinearities is also presented.


AIP Conference Proceedings | 2018

Experimental observation of Fano effect in Ag nanoparticle-CdTe quantum dot hybrid system

Sabina Gurung; J. Jayabalan; Asha Singh; Salahuddin Khan; Rama Chari

We have experimentally measured the optical properties of Ag nanoparticle-CdTe quantum dot hybrid system and compared it with that of bare CdTe quantum dot colloid. It has been shown that the photo...


Applied Physics Letters | 2015

Probing carrier dynamics of individual layers in a heterostructure using transient reflectivity

Salahuddin Khan; J. Jayabalan; Asha Singh; Rachana Yogi; Rama Chari

We report the wavelength dependent transient reflectivity measurements in AlGaAs-GaAs heterostructures having two-dimensional electron (or hole) gas near the interface. Using a multilayer model for transient reflectivity, we show that the magnitude and sign of contributions from the carriers in two-dimensional electron (or hole) gas and GaAs to the total signal depends on the wavelength. Further, it has been shown that it is possible to study the carrier dynamics in a given layer of a heterostructure by performing transient reflectivity at specific wavelengths.


Surface Review and Letters | 2014

MODULATIONS IN LOW-TEMPERATURE TRANSIENT REFLECTIVITY MEASUREMENTS

Salahuddin Khan; Rama Chari; J. Jayabalan; Suparna Pal; T. K. Sharma; A. K. Sagar; M. S. Ansari; P. K. Kush

Periodic modulations that appear in the low-temperature transient reflectivity signal of a GaAsP/AlGaAs single quantum well is studied. Similar anomalous oscillations are also reported in layered manganite [K. Kouyama et al., J. Phys. Soc. Jpn.76 (2007) 123702(1–3).] We show that such periodic modulations are caused by changes in the linear reflectivity of the sample during transient reflectivity measurements. Studies carried out on reflectivity of different materials under identical conditions show that these modulations on the true transient reflectivity signal are caused by condensation of residual gases on the surface of quantum well. Methods to obtain reliable transient reflectivity data are also described.


Photonics | 2012

Effect of pump depletion on transient absorption signal in metal nanoparticles

J. Jayabalan; Asha Singh; Salahuddin Khan; Rama Chari

Electron-lattice thermalization time in metal nanoparticles or in bulk metal are usually estimated by measuring the decay time of the change in transmission following optical excitation. Such measurements can be performed using a femtosecond laser in transient absorption geometry. We find that the decay time of the change in absorption of silver nanoplatelets in water depends on the volume fraction of silver in water for a given intensity. By estimating the volume fraction dependence of third-order nonlinearity in the same samples, we attribute the variation in the measured decay time of change in absorption to pump depletion effects.


Journal of Luminescence | 2016

Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

S. Ananthakumar; J. Jayabalan; Asha Singh; Salahuddin Khan; S. Moorthy Babu; Rama Chari


Pramana | 2014

Tunable third-harmonic probe for non-degenerate ultrafast pump–probe measurements

Asha Singh; Salahuddin Khan; Podili Sivasankaraiah; J. Jayabalan; Rama Chari

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J. Jayabalan

Raja Ramanna Centre for Advanced Technology

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Rama Chari

Raja Ramanna Centre for Advanced Technology

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Asha Singh

Raja Ramanna Centre for Advanced Technology

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Suparna Pal

Raja Ramanna Centre for Advanced Technology

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T. K. Sharma

Raja Ramanna Centre for Advanced Technology

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S. M. Oak

Raja Ramanna Centre for Advanced Technology

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S. Porwal

Raja Ramanna Centre for Advanced Technology

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Himanshu Srivastava

Raja Ramanna Centre for Advanced Technology

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