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Dive into the research topics where Samrat Sarkar is active.

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Featured researches published by Samrat Sarkar.


CrystEngComm | 2014

Self-sacrificial template directed hydrothermal route to kesterite-Cu2ZnSnS4 microspheres and study of their photo response properties

Samrat Sarkar; Kaustav Bhattacharjee; G. C. Das; K.K. Chattopadhyay

In this work, a self-sacrificial template directed hydrothermal route to synthesize Cu2ZnSnS4 (CZTS) 3D-hierarchical microspheres in the presence of citric acid is reported. The phase purity and morphology of the as-synthesized product were optimised. Citric acid plays a key role in reducing the chance of phase segregation and at the same time it helps in the formation of the 3D structure by affecting the crystal growth process. A time dependent growth study of the microspheres has been performed and a possible growth mechanism is proposed. UV-Vis absorption analysis shows that the material has a strong absorption in the visible range with a direct band gap of 1.45 eV. The photoelectric response of the sample has also been studied which shows significant photo current for the sample fabricated into thin films. Thus the as synthesized CZTS microspheres are an optimum candidate for use as an absorber layer in solar cell devices.


Colloids and Surfaces B: Biointerfaces | 2016

A novel biocompatible conducting polyvinyl alcohol (PVA)-polyvinylpyrrolidone (PVP)-hydroxyapatite (HAP) composite scaffolds for probable biological application.

B. Chaudhuri; Bholanath Mondal; S.K. Ray; Samrat Sarkar

We have prepared biocompatible composites of 80wt% polyvinyl alcohol (PVA)-(20wt%) polyvinylpyrrolidone (PVP) blend with different concentrations of bioactive nanohydroxyapatite, Ca10(PO4)6(HO)2 (HAP). The composite films demonstrated maximum effective conductivity (σ∼1.64×10(-4)S/m) and effective dielectric constant (ε∼290) at percolation threshold concentration (∼10wt% HAP) at room temperature. These values of σ and ε are much higher than those of PVA, PVP or HAP. Our preliminary observation indicated excellent biocompatibility of the electrospun fibrous meshes of two of these composites with different HAP contents (8.5 and 5wt% within percolation threshold concentration) using NIH 3T3 fibroblast cell line. Cells viability on the well characterized composite fibrous scaffolds was determined by MTT [3-(4,5-di-methylthiazol-2-yl)-2,5-diphenyltetrazolium bromide] assay analysis. Enhancement of σ, due to HAP addition, was found to show increased biocompatibility of the fibrous scaffold. Enhanced σ value of the PVA/PVP-HAP composite provided supporting cues for the increased cell viability and biocompatibility of the composite fibrous meshes. Excellent biocompatibility these electrospun composite scaffolds made them to plausible potential candidates for tissue engineering or other biomedical applications.


RSC Advances | 2016

rGO-Wrapped flowerlike Bi2Se3 nanocomposite: synthesis, experimental and simulation-based investigation on cold cathode applications

Biswajit Das; Samrat Sarkar; Rimpa Khan; S. Santra; N.S. Das; K.K. Chattopadhyay

Bi2Se3 nanoflowers (NFs) and reduced graphene oxide (rGO) nanocomposite (BG) have been synthesized by a cost-effective, ecofriendly and easy hydrothermal route for the first time. Thorough characterizations confirm the phase, chemical composition and morphology of the samples. Room temperature transport measurement showed that the composite samples exhibit enhanced electrical conductivity compared to the pure Bi2Se3 nanoflowers (NFs). The possibility of using this composite in applications such as low macroscopic field emitters for cold cathode application has been investigated. For this, theoretical simulations are performed for pure and composite samples with graphene wrapping of different degrees and to evaluate the relation between the degree of rGO wrapping and the enhancement of FE properties, and the same was verified experimentally. It is observed that the enhancement factor for cold cathode emission of Bi2Se3–rGO (BG) composite is almost 5 times higher than that of pristine GO, 2.6 times that of rGO and nearly 1.5 times higher than that of pure Bi2Se3 NFs. The enhancement of the cold emission properties is attributed to suitable wrapping of rGO sheets over Bi2Se3 NFs. This produces more curvature at the nanoflakes edges and the electron affinities between the materials are favorable for the enhancement of cold cathode emission. The sample exhibiting the best FE properties also showed photoresponse properties under visible light excitation.


ACS Omega | 2017

Co3O4 Nanowires on Flexible Carbon Fabric as a Binder-Free Electrode for All Solid-State Symmetric Supercapacitor

Promita Howli; Swati Das; Samrat Sarkar; Madhupriya Samanta; Karamjyoti Panigrahi; N.S. Das; K.K. Chattopadhyay

Developing portable, lightweight, and flexible energy storage systems has become a necessity with the advent of wearable electronic devices in our modern society. This work focuses on the fabrication of Co3O4 nanowires on a flexible carbon fabric (CoNW/CF) substrate by a simple cost-effective hydrothermal route. The merits of the high surface area of the prepared Co3O4 nanostructures result in an exceptionally high specific capacitance of 3290 F/g at a scan rate of 5 mV/s, which is close to their theoretical specific capacitance. Furthermore, a solid-state symmetric supercapacitor (SSC) based on CoNW/CF (CoNW/CF//CoNW/CF) was fabricated successfully. The device attains high energy and power densities of 6.7 Wh/kg and 5000 W/kg. It also demonstrates excellent rate capability and retains 95.3% of its initial capacitance after 5000 cycles. Further, the SSC holds its excellent performance at severe bending conditions. When a series assembly of four such devices is charged, it can store sufficient energy to power a series combination of five light-emitting diodes. Thus, this SSC device based on a three-dimensional coaxial architecture opens up new strategies for the design of next-generation flexible supercapacitors.


ACS Applied Materials & Interfaces | 2017

Topological Insulator Bi2Se3/Si-Nanowire-Based p–n Junction Diode for High-Performance Near-Infrared Photodetector

Biswajit Das; N.S. Das; Samrat Sarkar; Biplab Chatterjee; K.K. Chattopadhyay

Chemically derived topological insulator Bi2Se3 nanoflake/Si nanowire (SiNWs) heterojunctions were fabricated employing all eco-friendly cost-effective chemical route for the first time. X-ray diffraction studies confirmed proper phase formation of Bi2Se3 nanoflakes. The morphological features of the individual components and time-evolved hybrid structures were studied using field emission scanning electron microscope. High resolution transmission electron microscopic studies were performed to investigate the actual nature of junction whereas elemental distributions at junction, along with overall stoichiometry of the samples were analyzed using energy dispersive X-ray studies. Temperature dependent current-voltage characteristics and variation of barrier height and ideality factor was studied between 50 and 300 K. An increase in barrier height and decrease in the ideality factor were observed with increasing temperature for the sample. The rectification ratio (I+/I-) for SiNWs substrate over pristine Si substrate under dark and near-infrared (NIR) irradiation of 890 nm was found to be 3.63 and 10.44, respectively. Furthermore, opto-electrical characterizations were performed for different light power intensities and highest photo responsivity and detectivity were determined to be 934.1 A/W and 2.30 × 1013 Jones, respectively. Those values are appreciably higher than previous reports for topological insulator based devices. Thus, this work establishes a hybrid system based on topological insulator Bi2Se3 nanoflake and Si nanowire as the newest efficient candidate for advanced optoelectronic materials.


ACS Applied Materials & Interfaces | 2017

Novel Quaternary Chalcogenide/Reduced Graphene Oxide-Based Asymmetric Supercapacitor with High Energy Density

Samrat Sarkar; Promita Howli; Biswajit Das; N.S. Das; Madhupriya Samanta; G. C. Das; Kalyan Kumar Chattopadhyay

In this work we have synthesized quaternary chalcogenide Cu2NiSnS4 (QC) nanoparticles grown in situ on 2D reduced graphene oxide (rGO) for application as anode material of solid-state asymmetric supercapacitors (ASCs). Thorough characterization of the synthesized composite validates the proper phase, stoichiometry, and morphology. Detailed electrochemical study of the electrode materials and ASCs has been performed. The as-fabricated device delivers an exceptionally high areal capacitance (655.1 mF cm-2), which is much superior to that of commercial micro-supercapacitors. Furthermore, a remarkable volumetric capacitance of 16.38 F cm-3 is obtained at a current density of 5 mA cm-2 combined with a very high energy density of 5.68 mW h cm-3, which is comparable to that of commercially available lithium thin film batteries. The device retains 89.2% of the initial capacitance after running for 2000 cycles, suggesting its long-term capability. Consequently, the enhanced areal and volumetric capacitances combined with decent cycle stability and impressive energy density endow the uniquely decorated QC/rGO composite material as a promising candidate in the arena of energy storage devices. Moreover, Cu2NiSnS4 being a narrow band gap photovoltaic material, this work offers a novel protocol for the development of self-charging supercapacitors in the days to come.


CrystEngComm | 2018

Flower-like Cu2NiSnS4 microspheres for application as electrodes of asymmetric supercapacitors endowed with high energy density

Samrat Sarkar; Promita Howli; Uttam Kumar Ghorai; Biswajit Das; Madhupriya Samanta; N.S. Das; K.K. Chattopadhyay

Design of electrode materials for supercapacitors using earth-abundant and less-toxic metals is both cost effective and environmentally benign. The present study deals with the synthesis of flower-like Cu2NiSnS4 microspheres (FCMs) and utilizing the same as positive electrodes of solid-state asymmetric supercapacitors. Citric acid was used for the synthesis of Cu2NiSnS4 as the structure directing agent; a possible growth mechanism of the formation of flower-like microspheres is proposed. The as-prepared FCMs on nickel foam demonstrated a high specific capacitance of 1639 F g−1 at a scan rate of 5 mV s−1. The as-fabricated solid-state asymmetric device achieved high values of volumetric (8.81 F cm−3) and gravimetric (105.7 F g−1) capacitances. The device attained the maximum energy density of 2.57 mW h cm−3/30.88 W h kg−1 and high power density of 201.4 mW cm−3/2.42 kW kg−1. Superior capacitance retention of the device was confirmed as it maintained 95.7% of the initial capacitance after 2000 cycles. Thus, by effective integration on a large-scale basis, these supercapacitors have great potential for the development of sustainable energy storage systems using low-cost earth-abundant materials.


Physica B-condensed Matter | 2018

Influence of polarization and self-polarization charges on impurity binding energy in spherical quantum dot with parabolic confinement

Samrat Sarkar; Supratik Sarkar; Chayanika Bose

Abstract We present a general formulation of the ground state binding energy of a shallow hydrogenic impurity in spherical quantum dot with parabolic confinement, considering the effects of polarization and self energy. The variational approach within the effective mass approximation is employed here. The binding energy of an on-center impurity is computed for a GaAs/AlxGa1−xAs quantum dot as a function of the dot size with the dot barrier as parameter. The influence of polarization and self energy are also treated separately. Results indicate that the binding energy increases due to the presence of polarization charge, while decreases due to the self energy of the carrier. An overall enhancement in impurity binding energy, especially for small dots is noted.


Journal of Applied Physics | 2018

Flexible, transparent resistive switching device based on topological insulator Bi2Se3-organic composite

Biswajit Das; Pranab Kumar Sarkar; N.S. Das; Samrat Sarkar; K.K. Chattopadhyay

Two-dimensional topological insulator bismuth selenide (Bi2Se3) nanosheets (NSs) embedded in poly-methyl methacrylate (PMMA) are employed for the first time for the resistive switching (RS) application. Hexagonal 2D Bi2Se3 NSs are synthesized by a simple solvothermal method and combine with PMMA at different weight percentages of 2D Bi2Se3. Field emission scanning electron microscopy and transmission electron microscopy along with other characterizations such as X-ray photoelectron spectroscopy and Raman spectroscopy were performed for the characterization of Bi2Se3@PMMA hybrid system. The composite was deposited on a transparent, flexible polyethylene terephthalate substrate to form Ag/Bi2Se3@PMMA/indium doped tin oxide memory cell. I-V characteristics of the device revealed a stable and non-volatile memory effect. The device shows a significantly high resistance (RHRS/RLRS) ratio, more than 103, high retention time (more than 9000 s) with high reproducibility over a large number of (105) ac cycles. From the experimental data, RS performances are explained by using a charge trapping–detrapping mechanism. Owing to the increasing interest in flexible electronics, bending tests are carried out at various bending diameters (10–30 mm) to show the mechanical robustness of the proposed device.Two-dimensional topological insulator bismuth selenide (Bi2Se3) nanosheets (NSs) embedded in poly-methyl methacrylate (PMMA) are employed for the first time for the resistive switching (RS) application. Hexagonal 2D Bi2Se3 NSs are synthesized by a simple solvothermal method and combine with PMMA at different weight percentages of 2D Bi2Se3. Field emission scanning electron microscopy and transmission electron microscopy along with other characterizations such as X-ray photoelectron spectroscopy and Raman spectroscopy were performed for the characterization of Bi2Se3@PMMA hybrid system. The composite was deposited on a transparent, flexible polyethylene terephthalate substrate to form Ag/Bi2Se3@PMMA/indium doped tin oxide memory cell. I-V characteristics of the device revealed a stable and non-volatile memory effect. The device shows a significantly high resistance (RHRS/RLRS) ratio, more than 103, high retention time (more than 9000 s) with high reproducibility over a large number of (105) ac cycles. From...


2017 Devices for Integrated Circuit (DevIC) | 2017

Optical properties of chemically synthesized amorphous carbon nanotube and cadmium selenide quantum dot hybrid

Samrat Sarkar; D. Banerjee; D. Pahari; K.K. Chattopadhyay

With the advance of the modern technologies, the dimension of the devices are ever shrinking. Among all the materials, Silicon has become the material of choice for fabricating devices in the nanometer range due to its different favorable properties. Research is also going on the use of other type of nanostructured materials for their possible application in devices. Carbon nanotubes (CNTs) and organic and inorganic Quantum dots (QDs) are also investigated for their different favorable properties and applications. This article reports the synthesis of amorphous Carbon nanotubes-cadmium selenide quantum dots by simple chemical process. The morphology of pure and hybrid samples were studied by field emission scanning and high resolution transmission electron microscope. Detail optical properties, especially UV-Vis absorption and photoluminescence property of the as prepared hybrid samples were studied in order to judge their possible application in optoelectronic devices.

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D. Banerjee

Indian Institute of Engineering Science and Technology

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Uttam Kumar Ghorai

Ramakrishna Mission Vidyamandira

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Bholanath Mondal

Indian Association for the Cultivation of Science

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D. Pahari

Indian Institute of Engineering Science and Technology

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