Samuel J. Anderson

Advanced power module using GaAs semiconductors, metal matrix composite packaging material, and low inductance design

Power modules for high power applications employing silicon based semiconductors are limited to low frequency operation and have some inherent reliability limitations. A 400 amp 600 volt power module has been designed using new technologies to overcome these limitations. Gallium arsenide based semiconductors provide efficient high frequency operation. Low inductance techniques are used in the package design to enable high frequency operation. Silicon carbide metal matrix composite materials are used to provide reliable packaging and thermal management of GaAs and silicon devices.

GaAs rectification-an enabling technology for high frequency operation of power MOS-gated transistors

This paper discusses three applications of GaAs rectification. The first application is a 600 V GaAs rectifier for power factor correction, the second is the low voltage application of GaAs in synchronous rectification and the third application is a medium voltage GaAs rectifier in output rectification. These applications of GaAs rectification demonstrate the potential performance improvement of this technology. Applications that can justify the cost of GaAs generally benefit in terms of switching performance at elevated temperature or ultra-low Rdson as shown by the examples in this paper.