Sang-myeon Han

51.1: Novel Simultaneous Emission Driving Scheme for Crosstalk‐free 3D AMOLED TV

A novel driving scheme based on simultaneous emission is reported for 2D/3D AMOLED TVs. The new method reduces left-right crosstalk without sacrificing luminance. The new scheme greatly simplifies the pixel circuit as the number of transistors for Vth compensation is reduced from 6 to 3. The capacitive load of scan lines is reduced by 48%, enabling very high refresh rate (240 Hz).

21.1: Distinguished Paper: 120 Hz 3D Driving for AMOLED with Interleaved Scan and Emission Operation

3D displays have required 1/240 s of scan time to properly display a stereoscopic image. In this report, a new driving method is proposed that provides 1/120 s of scan time, thus enabling higher resolution. The pixels are arranged as two groups: Even and Odd. One group performs scanning while the other group is emitting and in the next field, these roles are swapped. Therefore, the entire frame time can be used for data input, rather than 1/2 of the frame time as in the previous method.

15.3: Smart Power-Saving Driving Scheme for AMOLEDs Using Dynamic Power Rail Control

A novel driving scheme, smart power control SPC, is reported to reduce the power consumption of an AMOLED panel. SPC analyzes the range of the input data of each frame, calculates the optimum level of the power rail that drives the OLED, and varies the power rail voltage accordingly. As a result, a 30″ AMOLED consumes 20.1% less power when displaying the IEC 62087 standard movie clip.

The Effect of Plasma Treatment on the SiO 2 film fabricated without Substrate Heating for Flexible Electronics

Silicon dioxide (SiO 2 ) films were deposited on crystalline silicon substrate by inductively coupled plasma chemical vapor deposition (ICP-CVD). In this paper, various process parameter-gas flow rate, ICP RF power, Process pressure were discussed for the investigation of refractive index. And some properties of the SiO 2 film are investigated. Since there was no external substrate heating during the deposition, the SiO 2 film showed poor electrical characteristics, such as shifted flat-band voltage and high effective charge density. We have proposed He plasma pre-treatment in order to reduce the interface fixed charge and some post-treatment. Our experimental results shows that He plasma pre-treatment supply thermal energy for decomposition of reactant gas and to remove effective charges. Hydrogen post-treatment also enhances electrical characteristics. We measured the effect of the plasma treatment using FT-IR spectrum and C-V characteristics.