Sang Soo Yu
Chungnam National University
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Publication
Featured researches published by Sang Soo Yu.
Journal of The Korean Magnetics Society | 2009
Hyeong Kyu Lim; Tran Thi Lan Anh; Sang Soo Yu; Kui-Jong Baek; Young Eon Ihm; Dojin Kim; Hyojin Kim; Changsoo Kim
다결정 Ge 1 ? x Mn x 박막의 자기적 상들에 관한 연구가 이루어졌다. Molecular beam epitaxy(MBE) 장비를 이용해 400 ℃에서 Ge 1 ? x Mn x 박막을 성장시켰다. Ge 1 ? x Mn x 박막의 캐리어 유형은 P타입 이였고, 전기 비저항 값은 4.0 × 10 ?2 ~1.5 × 10 ?4 ohm-㎝이었다. 자기적인 특성과 미세구조의 분석에 기초하여 Ge 1 ? x Mn x /SiO₂/Si(100) 박막에 310 K 이내의 큐리에온도를 지닌 강자성의 Ge₃Mn? 상이 형성되었음을 알 수 있었다. 게다가, Ge₃Mn? 상이 형성된 Ge 1 ? x Mn x 박막은 20 K, 9 T의 자기장에서 약 9 %의 음의 자기저항을 보였다.
nano/micro engineered and molecular systems | 2007
Sang Soo Yu; Tran Thi Lan Anh; Young Eon Ihm; Dojin Kim; Hyojin Kim; Soon Ku Hong; Chang-Soo Kim; Hyun Ryu
Amorphous Ge<sub>1-x </sub>Mn<sub>x</sub> thin films grown by low temperature vapor deposition were annealed and their electrical and magnetic properties have been studied. Amorphous Ge<sub>1-x</sub>Mn<sub>x</sub> thin films were annealed at 300°C, 400°C, 500°C, 600°C and 700°C for 3 minutes in high vacuum chamber. X-ray diffraction and TEM analyses reveal that as-grown Ge<sub>1-x</sub>Mn<sub>x</sub> thin films are amorphous, and fine crystalline phases are precipitated when annealed. The fine crystalline precipitates appear at the lower temperature as the Mn concentration of amorphous Ge<sub>1-x </sub>Mn<sub>x</sub> thin films increases. As-grown amorphous Ge<sub>1-x </sub>Mn<sub>x</sub> thin films have p-type majority carriers and the type of majority carriers is not changed after annealing, but the electrical resistivity increases with annealing temperature. Magnetization characteristics show that the as-grown amorphous Ge<sub>1-x </sub>Mn<sub>x</sub> thin films are ferromagnetic and the Curie temperatures are around 130K. Curie temperature and saturation magnetization of annealed Ge<sub>1-x </sub>Mn<sub>x</sub> thin films increase with annealing temperature. There are different mechanisms to understand increasing of Curie temperature that is related with annealing temperature. Firstly, interaction between Mn spins might be changed by annealing effect. Secondly, magnetization behavior and X-ray analysis imply that the formation of ferromagnetic Ge<sub>3</sub>Mn<sub>5</sub> phase causes the change of magnetic and electrical properties of annealed Ge<sub>1-x </sub>Mn<sub>x</sub> thin films.
Journal of Magnetism and Magnetic Materials | 2004
Young Mi Cho; Sang Soo Yu; Young Eon Ihm; Dojin Kim; Hyojin Kim; Jong Sung Baek; Chang-Soo Kim; Byoung Taek Lee
Current Applied Physics | 2006
Sang Soo Yu; Tran Thi Lan Anh; Young Eon Ihm; Dojin Kim; Hyojin Kim; Soon Ku Hong; Sangjun Oh; Chang-Soo Kim; Hwack Joo Lee; Byung Chill Woo
Current Applied Physics | 2006
Sang Soo Yu; Young Mi Cho; Young Eon Ihm; Dojin Kim; Hyojin Kim; Soon Ku Hong; Sangjun Oh; Byung Chill Woo; Chang-Soo Kim
Solid State Communications | 2005
Sang Soo Yu; Tran Thi Lan Anh; Young Eon Ihm; Dojin Kim; Hyojin Kim; Sangjun Oh; Chang-Soo Kim; Hyun Ryu
Journal of Magnetism and Magnetic Materials | 2006
Sang Soo Yu; Ki Hak Kim; Young Eon Ihm; Dojin Kim; Hyojin Kim; Soon Ku Hong; Changsoo Kim; Hyun Ryu; Sangjun Oh
Journal of Magnetism and Magnetic Materials | 2004
Young Eon Ihm; Sang Soo Yu; Dojin Kim; Hyojin Kim; Kap Ho Lee; Chang-Soo Kim; Byong-Taek Lee
Journal of Magnetism and Magnetic Materials | 2006
Sang Soo Yu; Kyung Hee Han; Young Eon Ihm; Dojin Kim; Hyojin Kim; Chang-Soo Kim; Hyun Ryu; Sangjun Oh
Current Applied Physics | 2006
Young Mi Cho; Sang Soo Yu; Young Eon Ihm; Seoung Won Lee; Dojin Kim; Hyojin Kim; Jae Min Sohn; Bong Goo Kim; Young Hwan Kang; Sangjun Oh; Chang-Soo Kim; Hwack Joo Lee