Sanggyu Yim

Coaxial RuO2–ITO Nanopillars for Transparent Supercapacitor Application

Supercapacitive properties of ruthenium oxide (RuO2) nanoparticles electrodeposited onto the indium tin oxide (ITO) nanopillars were investigated. Compared to conventional planar current collectors, this coaxially nanostructured current collector-electrode system can provide increased contact for efficient charge transport, and the internanopillar spacing allows easy access of electrolyte ions. The morphological and electrochemical properties depended on the thickness of the RuO2 layers, i.e., the number of electrodeposition cycles. A maximum specific capacitance, Csp, of 1235 F/g at a scan rate of 50 mV/s was achieved for the 30-cycle deposited RuO2-ITO nanopillars. The other capacitive properties such as electrochemical reversibility and Csp retention at high scan rates also improved greatly.

Influence of surface morphology evolution of SubPc layers on the performance of SubPc/C60 organic photovoltaic cells

In this study, small-molecule organic solar cells based on choloro[subphthalocyaninato]boron (III) (SubPc) as an electron donor and fullerene (C60) as an electron acceptor were fabricated by varying the thickness, d, of the SubPc layer. The power conversion efficiency was maximized to 1.8% at d ∼ 130 A due to the relatively large values of the short-circuit current density (JSC) and fill factor (FF). This optimal thickness was also strongly related to the surface morphology evolution of the SubPc thin films. The corrugated surface nanostructures were continually formed until the thickness of the film increased up to 130 A, which is advantageous for the formation of an interdigitated electron donor-acceptor interface. In contrast, for films thicker than 130 A, the corrugated surface structures were filled with subsequently deposited molecules, leading to a smoother morphology and consequently reduced JSC and FF value of the cells.

Molecular-Orientation-Induced Rapid Roughening and Morphology Transition in Organic Semiconductor Thin-Film Growth

We study the roughening process and morphology transition of organic semiconductor thin film induced by molecular orientation in the model of molecular semiconductor copper hexadecafluorophthalocyanine (F16CuPc) using both experiment and simulation. The growth behaviour of F16CuPc thin film with the thickness, D, on SiO2 substrate takes on two processes divided by a critical thickness: (1) D ≤ 40 nm, F16CuPc thin films are composed of uniform caterpillar-like crystals. The kinetic roughening is confirmed during this growth, which is successfully analyzed by Kardar-Parisi-Zhang (KPZ) model with scaling exponents α = 0.71 ± 0.12, β = 0.36 ± 0.03, and 1/z = 0.39 ± 0.12; (2) D > 40 nm, nanobelt crystals are formed gradually on the caterpillar-like crystal surface and the film growth shows anomalous growth behaviour. These new growth behaviours with two processes result from the gradual change of molecular orientation and the formation of grain boundaries, which conversely induce new molecular orientation, rapid roughening process, and the formation of nanobelt crystals.

Supercapacitive Properties of 3D-Arrayed Polyaniline Hollow Nanospheres Encaging RuO2 Nanoparticles

A major limitation of polyaniline (PANi) electrodes for supercapacitors is the slow rate of ion transport during redox reactions and the resultant easy saturation of areal capacitance with film thickness. In this study, three-dimensionally (3D)-arrayed PANi nanospheres with highly roughened surface nanomorphology were fabricated to overcome this limitation. A hierarchical nanostructure was obtained by polymerizing aniline monomers on a template of 3D-arrayed polystyrene (PS) nanospheres and appropriate oxidative acid doping. The structure provided dramatically increased surface area and porosity that led to the efficient diffusion of ions. Thus, the specific capacitance (Csp) reached 1570 F g-1, thereby approaching a theoretical capacitance of PANi. In addition, the retention at a high scan rate of 100 mV s-1 was 77.6% of the Csp at a scan rate of 10 mV s-1. Furthermore, 3D-arrayed hollow PANi (H-PANi) nanospheres could be obtained by dissolving the inner PS part of the PS/PANi core/shell nanospheres with tetrahydrofuran. The ruthenium oxide (RuO2) nanoparticles (NPs) were also encaged in the H-PANi nanospheres by embedding RuO2 NPs on the PS nanospheres prior to polymerization of PANi. The combination of the two active electrode materials indicated synergetic effects. The areal capacitance of the RuO2-encaged PANi electrode was significantly larger than that of the RuO2-free PANi electrode and could be controlled by varying the amount of encaged RuO2 nanoparticles. The encagement could also solve the problem of detachment of RuO2 electrodes from the current collector. The effects of the nanostructuring and RuO2 encagement were also quantitatively analyzed by deconvoluting the total capacitance into the surface capacitive and insertion elements.

Deprotonation of N3 adsorbed on TiO2 for high-performance dye-sensitized solar cells (DSSCs)

Chemical modification of a N3-adsorbed TiO2 photoelectrode with 1-methyl-3-phenylpropylamine enhanced the power conversion efficiency (η) by ca. 15% compared to DSSCs containing pristine N3 by increasing the short circuit current density (Jsc) and open circuit voltage (Voc).

Structural templating and growth behavior of copper phthalocyanine thin films deposited on a polycrystalline perylenetetracarboxylic dianhydride layer

Structural templating and the growth behavior of copper phthalocyanine (CuPc) thin films deposited on a polycrystalline 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) layer were examined using x-ray diffraction (XRD) and atomic force microscopy. The templated CuPc films were found to grow on both the (110) and (102) plane of the α-PTCDA layer, indicating the intermolecular π-π interaction is strong enough to induce templating even on the underlying layer which is tilted at an angle of 25° from the substrate surface as well as on the surface-parallel layer. In contrast to the large growth exponent (β) values for other single layer molecular thin films, a significantly small β value of 0.17 ± 0.06 was obtained on the PTCDA/CuPc heterolayer thin film system. The XRD and scaling behavior studies suggest that this relatively slow surface roughening can be rationalized by the lack of surface parallel crystalline ordering at the initial stage of CuPc film growth on the PTCDA layer.

Growth dynamics of C60 thin films: Effect of molecular structure

The surface morphology and growth behavior of fullerene thin films have been studied by atomic force microscopy and height difference correlation function analysis. In contrast to the large growth exponents (beta) previously reported for other organic semiconductor thin-film materials, a relatively small beta value of 0.39±0.10 was determined. Simulations of (1+1)-dimensional surface lateral diffusion models indicate that the evolution of deep grain boundaries leads to a rapid increase in beta. We suggest that the commonly observed large beta values for organic thin films are due to their intrinsically anisotropic molecular structures and hence different stacking directions between crystallite domains.

Effects of surface characteristics of dielectric layers on polymer thin-film transistors obtained by spray methods

The effect of surface characteristics of dielectric layers on the molecular orientation and device performance of sprayed organic field-effect transistors (OFETs) obtained by a novel solvent-assisted post-treatment, called the solvent-sprayed overlayer (SSO) method, were investigated. The OFETs were fabricated by the spray method using regioregular poly(3-hexylthiophene) (RR-P3HT) as an active material. The SSO treatment was applied on the as-sprayed active layers to arrange the molecular ordering. Bare thin SiO(2) layers and octadecyltrichlorosilane (OTS)-treated SiO(2) (OTS-SiO(2)) were employed as the dielectric materials. The resulting chain orientation, crystallinity, and device performance were correlated as a function of SSO treatment and dielectric layers. The intrinsic limitation of spray methods for polymer film formation was overcome regardless of the type of dielectric layer using the SSO treatment. The orientation direction of RR-P3HT was controlled by SSO treatment to an edge-on dominant orientation that is preferential for charge transport, regardless of the type of dielectric layer. The crystal growth was further enhanced on the OTS-SiO(2) layers because of the reduced nucleation sites. These effects were successfully reflected in the device performance, including an orders-of-magnitude increase in charge mobility. The SSO method is a powerful external treatment method for reorienting the molecular ordering of solidified active films of OFETs to the preferential edge-on packing. The growth of crystals was further optimized by controlling the surface characteristics of the dielectric layers. The purpose of this study was to find the full capabilities of the SSO treatment method that will facilitate the development of high-throughput, large-area organic electronic device manufacturing.

Two-dimensional photonic crystal arrays for polymer:fullerene solar cells

We report the application of two-dimensional (2D) photonic crystal (PC) array substrates for polymer:fullerene solar cells of which the active layer is made with blended films of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The 2D PC array substrates were fabricated by employing a nanosphere lithography technique. Two different hole depths (200 and 300 nm) were introduced for the 2D PC arrays to examine the hole depth effect on the light harvesting (trapping). The optical effect by the 2D PC arrays was investigated by the measurement of optical transmittance either in the direction normal to the substrate (direct transmittance) or in all directions (integrated transmittance). The results showed that the integrated transmittance was higher for the 2D PC array substrates than the conventional planar substrate at the wavelengths of ca. 400 nm, even though the direct transmittance of 2D PC array substrates was much lower over the entire visible light range. The short circuit current density (J(SC)) was higher for the device with the 2D PC array (200 nm hole depth) than the reference device. However, the device with the 2D PC array (300 nm hole depth) showed a slightly lower J(SC) value at a high light intensity in spite of its light harvesting effect proven at a lower light intensity.

Isolation of Single-Stranded DNA Aptamers That Distinguish Influenza Virus Hemagglutinin Subtype H1 from H5

Surface protein hemagglutinin (HA) mediates the binding of influenza virus to host cell receptors containing sialic acid, facilitating the entry of the virus into host cells. Therefore, the HA protein is regarded as a suitable target for the development of influenza virus detection devices. In this study, we isolated single-stranded DNA (ssDNA) aptamers binding to the HA1 subunit of subtype H1 (H1-HA1), but not to the HA1 subunit of subtype H5 (H5-HA1), using a counter-systematic evolution of ligands by exponential enrichment (counter-SELEX) procedure. Enzyme-linked immunosorbent assay and surface plasmon resonance studies showed that the selected aptamers bind tightly to H1-HA1 with dissociation constants in the nanomolar range. Western blot analysis demonstrated that the aptamers were binding to H1-HA1 in a concentration-dependent manner, yet were not binding to H5-HA1. Interestingly, the selected aptamers contained G-rich sequences in the central random nucleotides region. Further biophysical analysis showed that the G-rich sequences formed a G-quadruplex structure, which is a distinctive structure compared to the starting ssDNA library. Using flow cytometry analysis, we found that the aptamers did not bind to the receptor-binding site of H1-HA1. These results indicate that the selected aptamers that distinguish H1-HA1 from H5-HA1 can be developed as unique probes for the detection of the H1 subtype of influenza virus.