Sangram K. Pradhan

Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application

Graphene Oxide (GO) based low cost flexible electronics and memory cell have recently attracted more attention for the fabrication of emerging electronic devices. As a suitable candidate for resistive random access memory technology, reduced graphene oxide (RGO) can be widely used for non-volatile switching memory applications because of its large surface area, excellent scalability, retention, and endurance properties. We demonstrated that the fabricated metal/RGO/metal memory device exhibited excellent switching characteristics, with on/off ratio of two orders of magnitude and operated threshold switching voltage of less than 1 V. The studies on different cell diameter, thickness, scan voltages and period of time corroborate the reliability of the device as resistive random access memory. The microscopic origin of switching operation is governed by the establishment of conducting filaments due to the interface amorphous layer rupturing and the movement of oxygen in the GO layer. This interesting experimental finding indicates that device made up of thermally reduced GO shows more reliability for its use in next generation electronics devices.

Topographically Engineered Large Scale Nanostructures for Plasmonic Biosensing.

We demonstrate that a nanostructured metal thin film can achieve enhanced transmission efficiency and sharp resonances and use a large-scale and high-throughput nanofabrication technique for the plasmonic structures. The fabrication technique combines the features of nanoimprint and soft lithography to topographically construct metal thin films with nanoscale patterns. Metal nanogratings developed using this method show significantly enhanced optical transmission (up to a one-order-of-magnitude enhancement) and sharp resonances with full width at half maximum (FWHM) of ~15nm in the zero-order transmission using an incoherent white light source. These nanostructures are sensitive to the surrounding environment, and the resonance can shift as the refractive index changes. We derive an analytical method using a spatial Fourier transformation to understand the enhancement phenomenon and the sensing mechanism. The use of real-time monitoring of protein-protein interactions in microfluidic cells integrated with these nanostructures is demonstrated to be effective for biosensing. The perpendicular transmission configuration and large-scale structures provide a feasible platform without sophisticated optical instrumentation to realize label-free surface plasmon resonance (SPR) sensing.

Enhanced optical transmission and Fano resonance through a nanostructured metal thin film

Artificial and engineered nanostructures expand the degrees of freedom with which one can manipulate the intricate interplay of light and matter. Certain nanostructural arrangements in the excited state enable the efficient electromagnetic coupling of propagating light with localized fields. Here, we demonstrate that light transmitted through a nanostructured metal thin film without any apertures can be significantly enhanced. Distinct asymmetric Fano resonances are observed in the zero-order transmission spectra using an incoherent light source. The transmission efficiency surpasses that of a metal thin film with the same area and thickness at the resonance maxima. The transmission minima and the sharp resonance maxima bear a strong resemblance to the extraordinary optical transmission observed in sub-wavelength nanohole array structures The resonance wavelength closely matches the nanostructural periodicity. The sensitivity of the resonances to the surrounding medium and the transmission efficiency demonstrate the potential for use in energy harvesting, imaging, optical processing and sensing applications.

Energy band alignment of high-k oxide heterostructures at MoS2/Al2O3 and MoS2/ZrO2 interfaces

Substrate-induced electron energy band alignments of ultrathin molybdenum disulfide (MoS2) films are investigated using photoemission spectroscopy. Thin layer MoS2/Al2O3 and MoS2/ZrO2 interfaces show valence band offset (VBO) values of 3.21 eV and 2.77 eV, respectively. The corresponding conduction-band offset (CBO) values are 3.63 eV and 1.27 eV. Similarly, the calculated VBO and CBO values for an ultrathin layer of MoS2/SiO2 are estimated to be 4.25 and 2.91 eV, respectively. However, a very thick layer of MoS2 on Al2O3 and ZrO2 layers increases the CBO and VBO values by 0.31 eV and 0.2 eV, respectively, due to the shifting of the Mo 4dz2 band toward the Fermi level. The atomic force microscopy images show that the films are atomically smooth and favor the formation of a high-quality interface between the substrate and the film. The investigated luminescence spectra reveal that the MoS2 films show very strong interactions with different high-k surfaces, whereas the Raman spectrum is only weakly influenc...

Effects of dielectric thickness on optical behavior and tunability of one-dimensional Ag/SiO 2 multilayered metamaterials

We fabricated one-dimensional periodic multilayered metamaterial structures consisting of Ag and SiO₂alternating layers. Optical responses, such as transmission and absorption, are consistent well within finite difference time domain (FDTD) simulations. Angle dependent real and imaginary dielectric permittivity reflection spectra demonstrate their operational capability in the visible wavelength region. This multilayer metamaterial can be converted into a photonic crystal by manipulating the thickness of SiO₂ and we demonstrate that proper filling of SiO₂/Ag layers the operating wavelength can be tuned to higher wavelength region. However, absolute value of transmission reduces with increasing number of multilayer pairs due to metal absorption.

Quantum-dot-conjugated graphene oxide as an optical tool for biosensor.

We have demonstrated a novel platform of quantum dots (QDs) core-shell conjugated graphene oxide (GO) biosensor for effective protein detection. The advantage in making core shell nanostructure allows preserving stable QDs, by improving quantum yield, and lowering the toxicity of the core. Both QDs and GO are efficient nanoparticle systems that can potentially be used for drug delivery, diagnosis, and biosensors scaffolds. However, our study indicates that the conjugation between these two nanoparticle systems makes their properties even more effective. The change in fluorescent intensity through fluorescence resonance energy transfer from quantum dots to GO produced a novel method for detection of the target and allows for the optimization of the recognition limit of Bovine serum albumin (BSA) due to efficient fluorescence resonance energy transfer as observed through time resolved relaxation spectroscopy. It is observed that the quenching of photoluminescence peak of QDs due to GO shell produced an applicable strategy and could be conveniently extended for detection of other biomolecules. We obtained significantly enhanced spectral signal through successful conjugation of GO with CdSe/CdS core shell, which can potentially be used for the detection of biomolecules with high sensitivity and selectivity. Our study underlines the efficiency of QD conjugated GO core shell in spectral detection of proteins even at very low concentration (0.25 mmol).

Electrical behavior of atomic layer deposited high quality SiO2 gate dielectric

Comprehensive and systematic electrical studies were performed on fabrication of high quality SiO2 thin films MOS capacitor using the robust, novel, and simple atomic layer deposition (ALD) technique using highly reactive ozone and tris (dimethylamino) silane (TDMAS) precursors. Ideal capacitance–voltage curve exhibits a very small frequency dispersion and hysteresis behavior of the SiO2 MOS capacitor grown at 1 s TDMAS pulse, suggesting excellent interfacial quality and purity of the film as probed using x-ray photoelectron studies. The flat-band voltage of the device shifted from negative toward positive voltage axis with increase of TDMAS pulses from 0.2 to 2 s. Based on an equivalent oxide thickness point of view, all SiO2 films have gate leakage current density of (5.18 × 10−8 A/cm2) as well as high dielectric break down fields of more than (∼10 MV/cm), which is better and comparable to that of thermally grown SiO2 at temperatures above 800 °C. These appealing electrical properties of ALD grown SiO2 ...

Highly-efficient thermoelectric pn-junction device based on bismuth telluride (Bi2Te3) and molybdenum disulfide (MoS2) thin films fabricated by RF magnetron sputtering technique

Layered structure bismuth telluride and molybdenum disulfide thin films were successfully deposited on different substrates using radio-frequency magnetron sputtering technique. The structural, morphological, and thermoelectric transport properties of bismuth telluride and molybdenum disulfide thin films have been investigated systematically to fabricate high-efficient thermal energy harvesting thermoelectric device. The magnitude of the Seebeck coefficient of bismuth telluride thin films decreases with increase in film thickness. Bismuth telluride grown at 350 °C for 10 min, which is approximately 120 nm, displays a maximum Seebeck coefficient of −126 μV K−1 at 435 K. The performance shows strong temperature dependence when the films were deposited at 300 °C, 350 °C, and 400 °C. The power factor increases from 0.91 × 10−3 W/mK2 at 300 K to about 1.4 × 10−3 W/mK2 at 350 K. Molybdenum disulfide films show the positive Seebeck coefficient values and their Seebeck coefficient increases with film thickness. The AFM images of bismuth telluride thin films display a root-mean-square (rms) roughness of 32.3 nm and molybdenum disulfide thin films show an rms roughness of 6.99 nm when both films were deposited at 350 °C. The open-circuit voltage of the pn-junction thermoelectric generator (TEG) device increases with increase in ΔT to about 130 mV at ΔT = 120 °C. We have demonstrated a highly efficient pn-junction TEG device for waste heat recovery applications.Layered structure bismuth telluride and molybdenum disulfide thin films were successfully deposited on different substrates using radio-frequency magnetron sputtering technique. The structural, morphological, and thermoelectric transport properties of bismuth telluride and molybdenum disulfide thin films have been investigated systematically to fabricate high-efficient thermal energy harvesting thermoelectric device. The magnitude of the Seebeck coefficient of bismuth telluride thin films decreases with increase in film thickness. Bismuth telluride grown at 350 °C for 10 min, which is approximately 120 nm, displays a maximum Seebeck coefficient of −126 μV K−1 at 435 K. The performance shows strong temperature dependence when the films were deposited at 300 °C, 350 °C, and 400 °C. The power factor increases from 0.91 × 10−3 W/mK2 at 300 K to about 1.4 × 10−3 W/mK2 at 350 K. Molybdenum disulfide films show the positive Seebeck coefficient values and their Seebeck coefficient increases with film thickness. T...

Tuning of thermally induced first-order semiconductor-to-metal transition in pulsed laser deposited VO2 epitaxial thin films

Vanadium oxide (VO2) thin films have drawn significant research and development interest in recent years because of their intriguing physical origin and wide range of functionalities useful for many potential applications, including infrared imaging, smart windows, and energy and information technologies. However, the growth of highly epitaxial films of VO2, with a sharp and distinct controllable transition, has remained a challenge. Here, we report the structural and electronic properties of high quality and reproducible epitaxial thin films of VO2, grown on c-axis oriented sapphire substrates using pulsed laser deposition at different deposition pressures and temperatures, followed by various annealing schedules. Our results demonstrate that the annealing of epitaxial VO2 films significantly enhances the Semiconductor to Metal Transition (SMT) to that of bulk VO2 transition. The effect of oxygen partial pressure during the growth of VO2 films creates a significant modulation of the SMT from around room ...