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Publication


Featured researches published by Sangya Jain.


Advances in Resist Technology and Processing IX | 1992

Novel DNQ PACs for high-resolution i-line lithography

William R. Brunsvold; Nicholas K. Eib; Christopher F. Lyons; Steve Seiichi Miura; Marina V. Plat; Ralph R. Dammel; O. B. Evans; M. Dalil Rahman; Dinesh N. Khanna; Sangya Jain; Ping-Hung Lu; Stanley A. Ficner

The use of i-line lithography for the 16 to 64 Mbit DRAM device generations calls for increased performance of i-line resists. This paper reports on investigations on novel sensitizers for advanced i-line lithography, starting out with a discussion of general design criteria, then discussing methodology and results of a screening phase, and examining in greater detail a small number of selected candidates for which resolution, exposure latitude, and depth-of-focus data were obtained. Finally, a new advanced resist for i-line lithography, AZR 7500, is presented, and its performance is evaluated in terms of the above criteria as well as thermal flow resistance.


Archive | 1990

Method of producing an image reversal negative photoresist having a photo-labile blocked imide

Donald Mammato; Sangya Jain; Dana Durham; A Mark; Douglas A. Usifer; Michael J. McFarland


Archive | 1986

Process for obtaining negative images from positive photoresists

A Mark; Dana Durham; Donald Mammato; Sangya Jain


Archive | 1988

Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment

A Mark; Donald Mammato; Dana Durham; Sangya Jain


Archive | 1991

Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing

A Mark; Donald Mammato; Dana Durham; Sangya Jain


Archive | 1985

Light-sensitive trisester of O-quinone diazide containing composition for the preparation of a positive-acting photoresist

Michael G. Kelly; Donald Mammato; Dana Durham; Sangya Jain; Lawrence Crane


Archive | 1990

Maleimide containing, negative working deep UV photoresist

Sangya Jain; Dinesh N. Khanna; Robert E. Potvin


Archive | 1988

Polysulfone barrier layer for bi-level photoresists

Sangya Jain


Archive | 1992

Image reversal negative working photoresist containing O-quinone diazide and cross-linking compound

A Mark; Donald Mammato; Dana Durham; Sangya Jain


Archive | 1989

Photoresist article having a portable, conformable, built-on mask

Sangya Jain; Salvatore Emmi; Thomas S. Phillips

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