Sara Pescetelli

Graphene–Perovskite Solar Cells Exceed 18 % Efficiency: A Stability Study

Interface engineering is performed by the addition of graphene and related 2 D materials (GRMs) into perovskite solar cells (PSCs), leading to improvements in the power conversion efficiency (PCE). By doping the mesoporous TiO2 layer with graphene flakes (mTiO2 +G), produced by liquid-phase exfoliation of pristine graphite, and by inserting graphene oxide (GO) as an interlayer between the perovskite and hole-transport layers, using a two-step deposition procedure in air, we achieved a PCE of 18.2 %. The obtained PCE value mainly results from improved charge-carrier injection/collection with respect to conventional PSCs. Although the addition of GRMs does not influence the shelf life, it is beneficial for the stability of PSCs under several aging conditions. In particular, mTiO2 +G PSCs retain more than 88 % of the initial PCE after 16 h of prolonged 1 sun illumination at the maximum power point. Moreover, when subjected to prolonged heating at 60 °C, the GO-based structures show enhanced stability with respect to mTiO2 +G PSCs, as a result of thermally induced modification at the mTiO2 +G/perovskite interface. The exploitation of GRMs in the form of dispersions and inks opens the way for scalable large-area production, advancing the possible commercialization of PSCs.

Self-consistent tight-binding calculations of electronic and optical properties of semiconductor nanostructures

Optical properties and electronic states of semiconductor nanostructures are calculated by using tight-binding models which account for valence band mixing, strain and external applied potentials in a self-consistent fashion. An appropriate formulation of the optical susceptibility in the tight-binding basis is given without introducing any additional parameters. Results for strained and unstrained systems are given.

Micro-Raman analysis of reverse bias stressed dye-sensitized solar cells

The degradation mechanisms of Reverse Bias (RB) stressed Dye Solar Cells (DSCs), sensitized with cis-bis(isothiocyanato)bis(2,2′-bipyridyl-4,4′-dicarboxylato)-ruthenium(II)bis-tetrabutylammonium (N719, Red Dye) and with cis-dicyano-bis(2,2′-bipyridyl-4,4′-dicarboxylic acid) ruthenium(II) (Ru505, Orange Dye) have been studied by means of resonance micro-Raman and UV-Vis spectroscopy. For N719 sensitized devices, the visible degradation induced by the stress tests involves both electrolytic solution and the sensitizer: the electrolyte suffers gas bubble formation and loss of solvent, while the dye cannot be regenerated and undergoes irreversible chemical changes. Confocal Raman imaging and UV-Vis absorption spectra confirmed that in regions where the electrolyte was absent, the detachment of the thiocyanate ligand (SCN−) from the dye is favored. On the other hand, measurements carried out on DSCs realized with the bis-cyano dye (Ru505) do not show dye modifications during the RB stress. We also clarify that the apparent N719 dye bleaching in particular zones of the cell active area, is not related to dye desorption from the TiO2 layer, but to loss of solvent and to dye chemical changes, which are responsible for a characteristic blue shift in the absorption spectrum.

Fabrication and reliability of dye solar cells: A resonance Raman scattering study

Abstract In this work, the effect of reverse bias stress tests on Dye Solar Cells (DSCs) based on N719 dye was investigated in detail using resonant micro-Raman spectroscopy. First the Raman lines were assigned to vibrations from the different constituents in a fresh solar cell. Then the mechanism of thiocyanato (SCN − ) loss under stress conditions was reported.

Graphene-Based Electron Transport Layers in Perovskite Solar Cells: A Step-Up for an Efficient Carrier Collection

The electron transport layer (ETL) plays a fundamental role in perovskite solar cells. Recently, graphene-based ETLs have been proved to be good candidate for scalable fabrication processes and to achieve higher carrier injection with respect to most commonly used ETLs. Here, the effects of different graphene-based ETLs in sensitized methylammonium lead iodide (MAPI) solar cells are experimentally studied. By means of time-integrated and picosecond time-resolved photoluminescence techniques, the carrier recombination dynamics in MAPI films embedded in different ETLs is investigated. Using graphene doped mesoporous TiO2 (G+mTiO2) with the addition of a lithium-neutralized graphene oxide (GO-Li) interlayer as ETL, it is found find that the carrier collection efficiency is increased by about a factor two with respect to standard mTiO2. Taking advantage of the absorption coefficient dispersion, the MAPI layer morphology is probed, along the thickness, finding that the MAPI embedded in the ETL composed by G+mTiO2 plus GO-Li brings to a very good crystalline quality of the MAPI layer with a trap density about one order of magnitude lower than that found with the other ETLs. In addition, this ETL freezes MAPI at the tetragonal phase, regardless of the temperature. Graphene-based ETLs can open the way to significant improvement of perovskite solar cells.

Mesoscopic Perovskite Light-Emitting Diodes

Solution-processed hybrid bromide perovskite light-emitting-diodes (PLEDs) represent an attractive alternative technology that would allow overcoming the well-known severe efficiency drop in the green spectrum related to conventional LEDs technologies. In this work, we report on the development and characterization of PLEDs fabricated using, for the first time, a mesostructured layout. Stability of PLEDs is a critical issue; remarkably, mesostructured PLEDs devices tested in ambient conditions and without encapsulation showed a lifetime well-above what previously reported with a planar heterojunction layout. Moreover, mesostructured PLEDs measured under full operative conditions showed a remarkably narrow emission spectrum, even lower than what is typically obtained by nitride- or phosphide-based green LEDs. A dynamic analysis has shown fast rise and fall times, demonstrating the suitability of PLEDs for display applications. Combined electrical and advanced structural analyses (Raman, XPS depth profiling, and ToF-SIMS 3D analysis) have been performed to elucidate the degradation mechanism, the results of which are mainly related to the degradation of the hole-transporting material (HTM) and to the perovskite-HTM interface.

Laser-Patterning Engineering for Perovskite Solar Modules With 95% Aperture Ratio

Small area hybrid organometal halide perovskite based solar cells reached performances comparable to the multicrystalline silicon wafer cells. However, industrial applications require the scaling-up of devices to module-size. Here, we report the first fully laser-processed large area (14.5 cm2) perovskite solar module with an aperture ratio of 95% and a power conversion efficiency of 9.3%. To obtain this result, we carried out thorough analyses and optimization of three laser processing steps required to realize the serial interconnection of various cells. By analyzing the statistics of the fabricated modules, we show that the error committed over the projected interconnection dimensions is sufficiently low to permit even higher aperture ratios without additional efforts.

High efficient perovskite solar cells by employing zinc-phthalocyanine as hole transporting layer

This work presents, a new efficient structure for mesoscopic organometal halide perovskite based solar cells (PSCs) employing vacuum evaporated zinc-phthalocyanine as hole transporting layer. The proposed device structure overcame 8% in efficiency and it is promising in term of stability and low cost manufacturing process.

XPS depth profiles of organo lead halide layers and full perovskite solar cells by variable-size argon clusters

Organic and inorganic materials are more and more frequently combined in high-performance hybrid electronic and photonic devices. For such multilayered stacks, the identification of layers and interface defects by depth profile analysis is a challenging task, especially because of the possible ion beam induced modifications. This is particularly true for perovskite solar cells stacks that in a mesoscopic structure usually combine a metal electrode, a mesoscopic conductive oxide layer, an intrinsically hybrid light absorber, an organic hole extraction layer and a metal counter electrode. While depth profile analysis with X-ray photoelectron spectroscopy (XPS) was already applied to investigate these devices, the X-ray and ion beam induced modifications on such hybrid layers have not been previously investigated. In this work we compare the profiles obtained with monatomic Ar+ beam at different energies, with the ones obtained with argon ion clusters (Arn+) with different sizes (150<n<1000) and energies (up to 8 keV). A systematic study is performed on full mesoscopic perovskite (CH3NH3PbI3) solar cells and on model hybrid samples ((FAxCs1-xPbI3)0.85 (MAPbBr3)0.15)/TiO2). The results show that for monatomic beams, the implantation of positively charged atoms induces the surface diffusion of free iodine species from the perovskite which modifies the I/Pb ratio. Moreover, lead atoms in the metallic state (Pb0 ) are found to accumulate at the bottom of the perovskite layer where the Pb0 /Pbtot fraction reaches 50%. With argon clusters, the ion beam induced diffusion of iodine is reduced only when the etch rate is sufficiently high to ensure a profile duration comparable with low-energy Ar+. Convenient erosion rates are obtained only for n=300 and n=500 clusters at 8 keV, which have also the advantage of preserving the TiO2 surface chemistry. However, with argon cluster ions, Pb0 particles in the perovskite are less efficiently sputtered which leads to the increase of the Pb0 /Pbtot fraction (up to 75%) at the perovskite/TiO2 interface. Finally, ion beam and X-ray induced artifacts on perovskite absorbers can be reasonably neglected for fast analysis conditions in which the exposure time is limited to few hours.

A universal drift-diffusion simulator and its application to OLED simulations

A universal simulation tool for electronic devices based on a semi-classical drift-diffusion (DD) model is presented. The core of the model is a fully-coupled system of Poisson equation for the electrostatic potential and drift-diffusion transport equations. Both charged and neutral (e.g. excitons) carriers are supported. One transport equation is associated to each carrier. The number of carriers can be set at user level. The equation system can be defined in 1, 2 and 3 dimensions, and it is solved using finite element methods (FEM). The simulator has many potential application, from simple semiconductors with electrons and holes transport, to far more complex device structures, such as the host-guest system of an OLED emitter layer including singlet and triplet excitons. The simulation of an OLED emitter layer is presented, including the thermally activated delayed fluorescence (TADF) effect.