Sara Trost

Low-temperature, solution-processed MoO(x) for efficient and stable organic solar cells.

Sol-gel processed MoO(x) (sMoO(x)) hole-extraction layers for organic solar cells are reported. A Bis(2,4-pentanedionato)molybdenum(VI)dioxide/isopropanol solution is used and only a moderate thermal post deposition treatment at 150 °C in N(2) ambient is required to achieve sMoO(x) layers with a high work-function of 5.3 eV. We demonstrate that in P3HT:PC(60)BM organic solar cells (OSCs) our sMoO(x) layers lead to a high filling factor of about 65% and an efficiency of 3.3% comparable to that of reference devices with thermally evaporated MoO(3) layers (eMoO(3)). At the same time, a substantially improved stability of the OSCs compared to devices using a PEDOT:PSS hole extraction layer is evidenced.

Room-temperature solution processed SnOx as an electron extraction layer for inverted organic solar cells with superior thermal stability

Solution processed tin oxide (SnOx) is used as an electron extraction interlayer in organic solar cells. As opposed to devices using TiOx, cells based on SnOx are stable even at elevated temperatures in the presence of moisture. Thus, by using SnOx instead of TiOx the requirements for a costly ultra-barrier encapsulation may be relaxed.

Highly Robust Transparent and Conductive Gas Diffusion Barriers Based on Tin Oxide

Transparent and electrically conductive gas diffusion barriers are reported. Tin oxide (SnOx ) thin films grown by atomic layer deposition afford extremely low water vapor transmission rates (WVTR) on the order of 10(-6) g (m(2) day)(-1) , six orders of magnitude better than that established with ITO layers. The electrical conductivity of SnOx remains high under damp heat conditions (85 °C/85% relative humidity (RH)), while that of ZnO quickly degrades by more than five orders of magnitude.

Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells

ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ < 400 nm) is blocked to achieve an improved device lifetime. In this work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1–20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated.

Transparent conductive thin-film encapsulation layers (Presentation Recording)

Gas diffusion barriers (GDB) are inevitable to protect sensitive organic materials or devices against ambient gases. Typically, thin-film gas diffusion barriers are insulators, e.g. Al2O3 or multilayers of Al2O3/ZrO2, etc.. A wide range of applications would require GDB which are at the same time transparent and electrically conductive. They could serve as electrode and moisture barrier simultaneously, thereby simplifying production. As of yet, work on transparent conductive GDB (TCGDBs) is very limited. TCGDBs based on ZnO prepared by atomic layer deposition (ALD) have been reported. Due to the chemical instability of ZnO, it turns out that their electrical conductivity severely deteriorates by orders of magnitude upon exposure to damp heat conditions after very short time. We will show that these issues can be overcome by the use of tin oxide (SnO2). Conductivities of up to 300 S/cm and extremely low water vapor transmission rates (WVTR) on the order of 10-6 g/(m2 day) can been achieved in SnOx layers prepared by ALD at low temperatures (<150°C). A sandwich of SnOx/Ag/SnOx is shown to provide an average transmittance of 82% and a low sheet resistance of 9 Ohm/sq. At the same time the resulting electrodes are extremely robust. E.g., while unprotected Cu and Ag electrodes degrade within a few minutes at 85°C/85%rH (e.g. Cu lost 7 orders of magnitude in electrical conductivity), sandwich structures of SnOx/(Cu or Ag)/SnOx remain virtually unchanged even after 100 h. The SnOx in this work will also provide corrosion protection for the metal in case of harsh processing steps on top these electodes (e.g. acidic). We demonstrate the application of these TCGDBs as electrodes for organic solar cells and OLEDs.