Satoshi Kawamoto

Valence Band Density of States of Palladium Silicides Studied by X-Ray Emission Spectroscopy (XES)

The valence band (VB) electronic state of the transition metal silicides, Pd2Si and PdSi, is studied by X-ray emission spectroscopy (XES), and it is proposed that the Si(s) electronic state is present near the Fermi edge of the VB density of states (VB-DOS) of Pd silicides. This conclusion is in clear contrast to a previous proposal, where it is claimed that the upper part of the valence band of transition metal silicide consists only of Si(3p)-metal(d) hybridized states.

Study of the Pd/Si(100)2×1 system using soft X-rays

Abstract Si crystal is well known to show a room-temperature alloyed interface formation (RTAIF) when it is brought into contact with a metal overlayer. In the present study, we have used photoemission spectroscopy (PES) using synchrotron radiation (SR) in the soft X-ray region to elucidate the initial stage of the silicide growth in Pd/Si(100)2 × 1 at room temperature. We propose that the chemical bonding model can explain the RTAIF in the Pd Si (100)2 × 1 system.