Satoshi Omata

Glow discharge polycrystalline silicon thin‐film transistors

Thin‐film transistors were fabricated from polycrystalline silicon films which were produced by glow discharge decomposition of silane at 500 °C on thermal oxidized silicon substrates. The dependence of the crystalline and electrical properties was observed for thicknesses from about 500 to 4500 A. As the film grew thicker, the strongly (110) oriented polycrystalline structures became predominant. The conductivity changed from 4×10−9 to 10−6 (Ω cm)−1 and the activation energy from 0.57 to 0.5 eV. The field‐effect mobility of these thin‐film transistors also varied with the thickness of the film.