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Sawaki Nobuhiko

Toyota

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Publication

Featured researches published by Sawaki Nobuhiko.

Archive | 2003

Semiconductor device including an ingaaln layer

Sawaki Nobuhiko; Honda Yoshio; Koide Norikatsu; Furukawa Katsuki

Archive | 2008

NITRIDE SEMICONDUCTOR STRUCTURE AND ITS MANUFACTURING METHOD

Sawaki Nobuhiko; Honda Yoshio; Hikosaka Toshiteru; Tanigawa Tomoyuki

Archive | 2002

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

Sawaki Nobuhiko; Koide Norikatsu; Furukawa Masaki

Archive | 2002

METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL AND UTILIZATION THEREOF

Sawaki Nobuhiko; Yamaguchi Masafumi; Honda Yoshio

Archive | 1998

MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING ELEMENT

Koide Norikatsu; Yamamoto Junji; Dokita Takeshi; Sawaki Nobuhiko; Honda Yoshio; Kuroiwa Hirosuke; Yamaguchi Masafumi

Archive | 2003

METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR

Sawaki Nobuhiko; Honda Yoshio; Koide Norikatsu

Archive | 2005

CARBON DOPED SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICES, AND MANUFACTURING METHOD THEREFOR

Sawaki Nobuhiko; Yamaguchi Masafumi; Honda Yoshio; Hikosaka Toshiteru; Koide Norikatsu; Manabe Katsuhide

Archive | 2008

Substrat zur Ausbildung einer Lichtemissionsschicht, Lichtemissionsvorrichtung und Lichtemissionsmaterial

Kiyama Akira; Mori Rentaro; Inaoka Hiroya; Ichiyanagi Masayuki; Sawaki Nobuhiko; Honda Yoshio; Vanase Yasuyuki

IEICE technical report. Electron devices | 2011

MOVPE growth of thick-InGaN on (1-101)GaN/Si

Tanikawa Tomoyuki; Honda Yoshio; Yamaguchi Masahito; Amano Hiroshi; Sawaki Nobuhiko

IEICE Technical Report; IEICE Tech. Rep. | 2007

Selective MOVPE of InGaN/GaN on a micro-faceted GaN fabricated on an Si substrate

Nakajima Yoshiki; Honda Yoshio; Yamaguchi Masahito; Sawaki Nobuhiko

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Collaboration

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Honda Yoshio

Toyota

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Amano Hiroshi

Tokyo Electron

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Ichiyanagi Masayuki

Toyota

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Inaoka Hiroya

Toyota

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Kiyama Akira

Toyota

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Mori Rentaro

Toyota

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Vanase Yasuyuki

Toyota

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