Schubert S. Chu
Applied Materials
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Featured researches published by Schubert S. Chu.
symposium on vlsi technology | 2017
Dian Lei; Kwang Hong Lee; Shuyu Bao; Wei Wang; Saeid Masudy-Panah; Sachin Yadav; Annie Kumar; Yuan Dong; Yuye Kang; Shengqiang Xu; Ying Wu; Yi-Chiau Huang; Hua Chung; Schubert S. Chu; Satheesh Kuppurao; Chuan Seng Tan; Xiao Gong; Yee-Chia Yeo
The worlds first GeSn p-FinFETs formed on a novel GeSn-on-insulator (GeSnOI) substrate is reported, with channel lengths L<inf>ch</inf> down to 50 nm and fin width W<inf>Fin</inf> down to 20 nm. In comparison with other reported GeSn p-FETs, record low S of 79 mV/decade, record high G<inf>m, int</inf>, of 807 μS/um (VDs of −0.5 V), and the highest G<inf>m, int</inf>/S<inf>sat</inf>, were achieved. The highest high-field hole mobility of 208 cm2/Vs (at inversion carrier density of 8×10<sup>−2</sup> cm<sup>−2</sup>) for GeSn p-FETs with CVD grown GeSn channel was also obtained.
Archive | 2009
Schubert S. Chu
Atomic layer deposition (ALD) is a technique where precursors are introduced alternatively, and a monolayer (or fraction thereof) is deposited on the surface at a time [1–4]. The sequential introduction of all precursors, separated by purge steps, completes an ALD cycle. Figure 14.1 illustrates the steps that comprise an ALD cycle.
Meeting Abstracts | 2008
Satheesh Kuppurao; Yihwan Kim; Yonah Cho; Saurabh Chopra; Zhiyuan Ye; Errol Antonio C. Sanchez; Schubert S. Chu
INTRODUCTION Selective epitaxy has gained increasing momentum in advanced high-performance logic as well as volatile and nonvolatile memory device fabrication. The advantages of this technique range from the well documented application of strained SiGe epitaxial films used to increase hole mobility and performance in pFET devices to intrinsic Si epitaxial layers used to prevent short channel effects in memory devices (DRAM). Other applications call upon the time tested strengths of epitaxy in ensuring abrupt, activated doped layers or junctions without the defectivity associated with implanted profiles.
international electron devices meeting | 2016
Yu-Shiang Huang; Chih-Hsiung Huang; Fang-Liang Lu; Chung-Yi Lin; Hung-Yu Ye; Sun-Rong Jan; Huang-Siang Lan; C. W. Liu; Yi-Chiau Huang; Hua Chung; Chorng-Ping Chang; Schubert S. Chu; Satheesh Kuppurao
It is the first time that CVD-grown GeSn channels with low thermal budget of 400°C significantly outperforms the Ge channel processed at high thermal budget of 550°C. Low thermal budget is necessary to prevent the Sn loss during the process. Note that only MBE-grown GeSn had large mobility reportedly in the past. Even with high Sn content (9%), the strong photoluminescence is observed from GeSn layers on Ge buffer on 300mm Si (001), indicating the high crystalline quality by CVD epitaxy. Ge cap with significant Δ Ev at Ge/GeSn interface can ensure the gate stack quality, and reduce the scattering of holes in the GeSn quantum wells by oxide/interface charges and surface roughness. However, the mobility is degraded by thick cap due to low hole population in the GeSn wells. The ∼7% mobility enhancement on <110> channel direction is observed using external transverse uniaxial tensile strain of ∼0.11% due to the reduction of effective mass. The mobility of GeSn QW p-MOSFETs increases with decreasing temperature at both high and low inversion carrier density, indicating that the mobility is dominated by phonon scattering. On the contrary, Ge channels are dominated by Coulomb scattering at low inversion carrier density, which has decreasing mobility with decreasing temperature. The normalized noise power density of GeSn p-MOSFETs decreases with increasing Ge cap thickness, reportedly for the first time, indicating that the carrier number fluctuation and correlated mobility fluctuation can be reduced when the carriers are away from interface.
ieee silicon nanoelectronics workshop | 2016
Yu-Shiang Huang; Chih-Hao Huang; Chih-Hsiung Huang; Fang-Liang Lu; Da-Zhi Chang; Chung-Yi Lin; Sun-Rong Jan; Huang-Siang Lan; C. W. Liu; Yi-Chiau Huang; Hua Chung; Chorng-Ping Chang; Schubert S. Chu; Satheesh Kuppurao
Pseudomorphic Ge<sub>0.91</sub>Sn<sub>0.09</sub> on Ge on Si with strong photoluminescence and low defect density is used for p-MOSFET channels. The mobility of Ge<sub>0.91</sub>Sn<sub>0.09</sub> Quantum Well p-MOSFETs are higher than control Ge p-MOSFETs due to hole population in the GeSn wells. The 7.5% mobility enhancement on <;110> channel direction is observed using external transverse uniaxial tensile strain (~0.11%). The highest [Sn] of 9% in the channels grown by CVD, Pt SB S/D, high I<sub>on</sub>/I<sub>off</sub> ratio, and strain-enhanced mobility are obtained in this work.
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International | 2014
Yihwan Kim; Yi-Chiau Huang; Errol Antonio C. Sanchez; Schubert S. Chu
A pseudomorphic growth of GeSn epitaxial films with [Sn] up to 16 at.% on relaxed Ge underlayer was demonstrated in a reduced pressure thermal chemical vapor deposition chamber. GeSn film resistivity can be as low as 0.3 mOhm-cm by in-situ boron doping of GeSn. Also, a GeSiSn film growth containing [Si]~24 at.% and [Sn]~4 at.% was achieved by flowing SiH4 during GeSn growth.
Archive | 2006
Paul F. Ma; Kavita Shah; Dien-Yeh Wu; Seshadri Ganguli; Christophe Marcadal; Frederick C. Wu; Schubert S. Chu
Archive | 2007
Seshadri Ganguli; Schubert S. Chu; Mei Chang; Sang-Ho Yu; Kevin Moraes; See-Eng Phan
Archive | 2007
Dien-Yeh Wu; Schubert S. Chu; Paul F. Ma; Jeffrey Tobin
Archive | 2007
Schubert S. Chu; Christophe Marcadal; Seshadri Ganguli; Norman Nakashima; Dien-Yeh Wu