Sean Knight

Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β -gallium oxide single crystals

There is growing interest in low-symmetry metal oxides because of their potential use in high-power electronics capable to sustain very high voltages. Very little is known about their fundamental physical properties, such as transverse and longitudinal optical phonon modes, dielectric constants, and how free charge carriers couple with lattice vibrations. This lack of information is partially due to the complexity by which these properties intertwine due to the low symmetry crystal systems. Here, the authors describe a general pathway to the analysis of long-wavelength experiments for monoclinic and triclinic crystal systems, and they report for the first time a complete set of phonon modes for the monoclinic phase of gallium oxide. These parameters may arrive just in time to support computational optimization of charge and heat transport for device designs. The concept for analysis of long wavelength properties in monoclinic and triclinic crystal systems can help access a widely uncharted field in condensed matter physics.

Semiconducting boron carbides with better charge extraction through the addition of pyridine moieties

The plasma-enhanced chemical vapor (PECVD) co-deposition of pyridine and 1,2 dicarbadodecaborane, 1,2-B10C2H12 (orthocarborane) results in semiconducting boron carbide composite films with a significantly better charge extraction than plasma-enhanced chemical vapor deposited semiconducting boron carbide synthesized from orthocarborane alone. The PECVD pyridine/orthocarborane based semiconducting boron carbide composites, with pyridine/orthocarborane ratios ~3:1 or 9:1 exhibit indirect band gaps of 1.8 eV or 1.6 eV, respectively. These energies are less than the corresponding exciton energies of 2.0 eV–2.1 eV. The capacitance/voltage and current/voltage measurements indicate the hole carrier lifetimes for PECVD pyridine/orthocarborane based semiconducting boron carbide composites (3:1) films of ~350 µs compared to values of ≤35 µs for the PECVD semiconducting boron carbide films fabricated without pyridine. The hole carrier lifetime values are significantly longer than the initial exciton decay times in the region of ~0.05 ns and 0.27 ns for PECVD semiconducting boron carbide films with and without pyridine, respectively, as suggested by the time-resolved photoluminescence. These data indicate enhanced electron–hole separation and charge carrier lifetimes in PECVD pyridine/orthocarborane based semiconducting boron carbide and are consistent with the results of zero bias neutron voltaic measurements indicating significantly enhanced charge collection efficiency.

Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies.

The effect of a tunable, externally coupled Fabry-Perot cavity to resonantly enhance the optical Hall effect signatures at terahertz frequencies produced by a traditional Drude-like two-dimensional electron gas is shown and discussed in this Letter. As a result, the detection of optical Hall effect signatures at conveniently obtainable magnetic fields, for example, by neodymium permanent magnets, is demonstrated. An AlInN/GaN-based high-electron mobility transistor structure grown on a sapphire substrate is used for the experiment. The optical Hall effect signatures and their dispersions, which are governed by the frequency and the reflectance minima and maxima of the externally coupled Fabry-Perot cavity, are presented and discussed. Tuning the externally coupled Fabry-Perot cavity strongly modifies the optical Hall effect signatures, which provides a new degree of freedom for optical Hall effect experiments in addition to frequency, angle of incidence, and magnetic field direction and strength.

Anisotropy, phonon modes, and lattice anharmonicity from dielectric function tensor analysis of monoclinic cadmium tungstate

We determine the frequency dependence of four independent Cartesian tensor elements of the dielectric function for CdWO4 using generalized spectroscopic ellipsometry within mid-infrared and far-inf ...

Electron effective mass in Sn-doped monoclinic single crystal β-gallium oxide determined by mid-infrared optical Hall effect

The isotropic average conduction band minimum electron effective mass in Sn-doped monoclinic single crystal β-Ga2O3 is experimentally determined by the mid-infrared optical Hall effect to be (0.284 ± 0.013)m0 combining investigations on (010) and ( 2¯01) surface cuts. This result falls within the broad range of values predicted by theoretical calculations for undoped β-Ga2O3. The result is also comparable to recent density functional calculations using the Gaussian-attenuation-Perdew-Burke-Ernzerhof hybrid density functional, which predict an average effective mass of 0.267m0. Within our uncertainty limits, we detect no anisotropy for the electron effective mass, which is consistent with most previous theoretical calculations. We discuss upper limits for possible anisotropy of the electron effective mass parameter from our experimental uncertainty limits, and we compare our findings with recent theoretical results.

Composition-Dependent Charge Transport in Boron Carbides Alloyed with Aromatics: Plasma Enhanced Chemical Vapor Deposition Aniline/Orthocarborane Films

Boron carbide films, alloyed with aniline moieties, were deposited by plasma enhanced chemical vapor deposition (PECVD) from aniline and orthocarborane precursors and were found to exhibit composition-dependent drift carrier lifetimes as derived from I( V) and C( V)) measurements. For a film with an aniline/carborane ratio of 5:1, the effective drift carrier lifetimes are ∼80 μs at low bias voltage but quickly drop to a few microseconds with increasing bias. A film with a 10:1 aniline/carborane ratio, however, exhibited lifetimes of ∼6 μs, or less, at 1 kHz, and much smaller values at 10 kHz. These lifetimes are orders of magnitude longer than those in polyaniline films and comparable to those in PECVD carborane films without aromatic content. X-ray photoelectron spectroscopy (XPS), FTIR, and ellipsometry, combined with density functional theory (DFT)-based cluster calculations, indicate that aniline and orthocarborane moieties are largely intact within the films. Bonding occurs primarily between aniline C sites and carborane B sites, and the aniline coordination number per carborane icosahedron is ∼2 as the aniline/carborane ratio is increased from 3:1 to 10:1. This aniline/carborane coordination ratio independent of aniline/orthocarborane stoichiometry is consistent with the dependence of charge transport properties on aniline film content at high bias voltage.

Electron effective mass in In0.33Ga0.67N determined by mid-infrared optical Hall effect

Mid-infrared optical Hall effect measurements are used to determine the free charge carrier parameters of an unintentionally doped wurtzite-structure

In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene

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Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies

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Properties of two-dimensional electron gas in AlGaN/GaN HEMT structures determined by cavity-enhanced THz optical Hall effect

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