Sebastian Geburt

Alignment of Semiconductor Nanowires Using Ion Beams

Gallium arsenide nanowires are grown on 100 GaAs substrates, adopting the epitaxial relation and thus growing with an angle around 35 degrees off the substrate surface. These straight nanowires are irradiated with different kinds of energetic ions. Depending on the ion species and energy, downwards or upwards bending of the nanowires is observed to increase with ion fluence. In the case of upwards bending, the nanowires can be aligned towards the ion beam direction at high fluences. Defect formation (vacancies and interstitials) within the implantation cascade is identified as the key mechanism for bending. Monte Carlo simulations of the implantation are presented to substantiate the results.

Nano-X-ray absorption spectroscopy of single Co-implanted ZnO nanowires.

We report on the local structure of single Co-implanted ZnO nanowires studied using a hard X-ray nanoprobe. X-ray fluorescence maps show uniform Zn and Co distributions along the wire within the length scale of the beam size. The X-ray fluorescence data allow the estimation of the Co content within the nanowire. Polarization dependent X-ray absorption near edge structure shows no structural disorder induced neither in the radial nor axial directions of the implanted nanowires after subsequent annealing. Co2+ ions occupy Zn sites into the wurtzite ZnO lattice. Extended X-ray absorption fine structure data reveal high structural order in the host lattice without distortion in their interatomic distances, confirming the recovery of the radiation damaged ZnO structure through thermal annealing.

Low threshold room-temperature lasing of CdS nanowires.

The synthesis of CdS nanostructures (bands, wires, irregular structures) was investigated by systematic variation of temperature and gas pressure, to deduce a comprehensive growth phase diagram. The high quality nanowires were further investigated and show stoichiometric composition of CdS as well as a single-crystalline lattice without any evidence of extended defects. The luminescence of individual nanowires at low excitation shows a strong near band edge emission at 2.41 eV indicating a low point defect concentration. Sharp peaks evolve at higher laser power and finally dominate the luminescence spectrum. The power dependence of the spectrum clearly shows all the characteristics of amplified stimulated emission and lasing action in the nanowire cavity. A low threshold was determined as 10 kW cm(-2) for lasing at room temperature with a slope efficiency of 5-10% and a Q factor of up to 1200. The length and diameter relations necessary for lasing of individual nanowires was investigated.

Intense Intrashell Luminescence of Eu-Doped Single ZnO Nanowires at Room Temperature by Implantation Created Eu–Oi Complexes

Successful doping and excellent optical activation of Eu(3+) ions in ZnO nanowires were achieved by ion implantation. We identified and assigned the origin of the intra-4f luminescence of Eu(3+) ions in ZnO by first-principles calculations to Eu-Oi complexes, which are formed during the nonequilibrium ion implantation process and subsequent annealing at 700 °C in air. Our targeted defect engineering resulted in intense intrashell luminescence of single ZnO:Eu nanowires dominating the photoluminescence spectrum even at room temperature. The high intensity enabled us to study the luminescence of single ZnO nanowires in detail, their behavior as a function of excitation power, waveguiding properties, and the decay time of the transition.

Continuous wave nanowire lasing.

Tin-doped cadmium sulfide nanowires reveal donor-acceptor pair transitions at low-temperature photoluminescence and furthermore exhibit ideal resonator morphology appropriate for lasing at continuous wave pumping. The continuous wave lasing mode is proven by the evolution of the emitted power and spectrum with increasing pump intensity. The high temperature stability up to 120 K at given pumping power is determined by the decreasing optical gain necessary for lasing in an electron-hole plasma.

Ion beam doping of semiconductor nanowires

Semiconductor nanowires are of major importance within the area of nanotechnology, and are usually synthesized using the so-called vapor-liquid-solid mechanism. Controlled doping, a necessary issue in order to realize devices, is an unsolved problem and an extremely difficult task if using such a growth mechanism. We use an alternative route for modifying the electrical, optical and magnetic properties of semiconductor nanowires: ion implantation. Several independent studies on ion beam doping of semiconductor nanowires will be presented.

Amphoteric nature of Sn in CdS nanowires.

High-quality CdS nanowires with uniform Sn doping were synthesized using a Sn-catalyzed chemical vapor deposition method. X-ray diffraction and transmission electron microscopy demonstrate the single crystalline wurtzite structure of the CdS/Sn nanowires. Both donor and acceptor levels, which originate from the amphoteric nature of Sn in II-VI semiconductors, are identified using low-temperature microphotoluminescence. This self-compensation effect was cross examined by gate modulation and temperature-dependent electrical transport measurement. They show an overall n-type behavior with relatively low carrier concentration and low carrier mobilities. Moreover, two different donor levels due to intrinsic and extrinsic doping could be distinguished. They agree well with both the electrical and optical data.

Local lattice distortions in single Co-implanted ZnO nanowires

This work reports on the local structure of as-implanted and thermally-treated single Co:ZnO nanowires studied using a hard X-ray nanoprobe. Although the Co ions are incorporated into the wurtzite ZnO lattice, X-ray absorption near edge structure data show high structural disorder in the as-implanted nanowires compared with the annealed ones. In particular, extended X-ray absorption fine structure from single wires reveals a lattice distortion around Zn sites of the as-implanted nanowires, which involves an expansion of the stable wurtzite lattice. The observed local lattice response confirms good recovery of the implantation-induced damage within the ZnO lattice through a thermal treatment.

Luminescence and energy transfer processes in ensembles and single Mn or Tb doped ZnS nanowires

Zinc sulfide (ZnS) nanowires with a typical diameter of 100 to 300 nm have been doped with different concentrations of either Mn or Tb using ion implantation. Both systems show very efficient and long living intra-shell luminescence with strong non-exponential decay characteristics in the range of milliseconds. The time behavior of the corresponding luminescence is well described within a modified Forster model, taking into account the lower dimensionality of the nanowires in case of radiationless dipole-dipole energy transfer. The general applicability of this model for energy transfer processes in low dimensional systems will be shown as a function of concentration, temperature, excitation density as well as for measurements on the level of single nanowires.

Defect induced changes on the excitation transfer dynamics in ZnS/Mn nanowires

Transients of Mn internal 3d5 luminescence in ZnS/Mn nanowires are strongly non-exponential. This non-exponential decay arises from an excitation transfer from the Mn ions to so-called killer centers, i.e., non-radiative defects in the nanostructures and is strongly related to the interplay of the characteristic length scales of the sample such as the spatial extensions, the distance between killer centers, and the distance between Mn ions. The transients of the Mn-related luminescence can be quantitatively described on the basis of a modified Förster model accounting for reduced dimensionality. Here, we confirm this modified Förster model by varying the number of killer centers systematically. Additional defects were introduced into the ZnS/Mn nanowire samples by irradiation with neon ions and by varying the Mn implantation or the annealing temperature. The temporal behavior of the internal Mn2+ (3d5) luminescence is recorded on a time scale covering almost four orders of magnitude. A correlation between defect concentration and decay behavior of the internal Mn2+ (3d5) luminescence is established and the energy transfer processes in the system of localized Mn ions and the killer centers within ZnS/Mn nanostructures is confirmed. If the excitation transfer between Mn ions and killer centers as well as migration effects between Mn ions are accounted for, and the correct effective dimensionality of the system is used in the model, one is able to describe the decay curves of ZnS/Mn nanostructures in the entire time window.