Sébastien Vieillard
Hispano-Suiza
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Publication
Featured researches published by Sébastien Vieillard.
Mathematics and Computers in Simulation | 2013
Stefan Breban; Christophe Saudemont; Sébastien Vieillard; Benoît Robyns
The embedded power systems are nowadays developing at high pace. Hybrid-electric vehicles, full-electric vehicles, airplanes, ships, high-speed trains, all share a common point - the embedded electrical power system. This paper aims to present an optimization methodology of a fuzzy-logic supervision strategy. The optimization objectives are to minimize the DC-link voltage variations, and to increase the system efficiency by reducing the dissipated power. For that, a methodology involving the experimental design and genetic algorithm will be presented. The simulation and experimental results are validating the proposed procedure.
energy conversion congress and exposition | 2009
Sylvain Mandray; Jean-Michel Guichon; Jean-Luc Schanen; Sébastien Vieillard; Arezki Bouzourene
This paper presents an automatic layout process for power electronics integrated modules. The chip position and power layout is automatically generated according to the best EMC/Thermal trade off. Optimization techniques use simple but fairly accurate EMC and Thermal models, presented in this paper. The proposed method is illustrated on a 4 legs 2kW inverter used for aircraft applications. The realization will use double sided technology.
Materials Science Forum | 2010
Olivier Berry; Youness Hamieh; Stephane Rael; Farid Meibody-Tabar; Sébastien Vieillard; Dominique Bergogne; Hervé Morel
This paper presents a study on a SiC JFET leg of a 3-leg Voltage Source Inverter (VSI). The switching curves obtained with the JFET working in free wheeling mode are shown to point out drain-to-gate interaction effects. Indeed, during the drain-source voltage variations, the JFET gate-source voltage can have considerable variations, because of the electrical coupling induced by the gate-drain capacitance Cgd. When the gate-source voltage variation becomes too negative, there is a risk of occurrence of the phenomenon of punch-through in the gate-source junction. Conversely, when it is enough positive, the JFET may conduct and lead to a leg short-circuit. To decrease these undesired effects for the JFET legs and consequently for the SiC JFET inverter, an external gate-source capacitor is used. This solution is studied and optimized by simulation on an inverter leg.
power electronics specialists conference | 2008
Dominique Bergogne; Hervé Morel; Dominique Planson; Dominique Tournier; Pascal Bevilacqua; Bruno Allard; Régis Meuret; Sébastien Vieillard; Stephane Rael
Archive | 2012
Sébastien Vieillard; Serge Berenger; Serge Thierry Roques; Pascal Dauriac
Archive | 2010
Guilhem Lejeune; Sébastien Vieillard
Archive | 2012
Eric De Wergifosse; Julien Rambaud; Sébastien Vieillard
Archive | 2012
Sébastien Vieillard; Serge Berenger; Serge Thierry Roques; Pascal Dauriac
Archive | 2011
Julien Rambaud; Sébastien Vieillard
Archive | 2010
Guilhem Lejeune; Sébastien Vieillard