Seiichi Watanabe

Low-Noise HEMT Using MOCVD

Low-noise HEMT AlGaAs/GaAs heterostructure devices have been developed using metal organic chemical vapor deposition (MOCVD). The HEMTs with 0.5-µm-long and 200-µm-wide gates have shown a minimum noise figure of 0.83 dB with an associated gain of 12.5 dB at 12 GHz at room temperature. Measurements have confirmed calculations on the effect of the number of gate bonding pads On the noise figure for different gate Widths. Substantial noise figure improvement was observed Under low-temperature operation, especially compared to conventional GaAs MESFETs. A two-stage amplifier designed for DBS reception using the HEMT in the first stage has displayed a noise figure under 2.0 dB from 11.7 to 12.2 GHz.

Technology transfer for high frequency devices for consumer electronics

Considerations for high-volume production on the order of millions of devices per month for consumer electronics are different from those for small- and medium-scale production and high-end telecommunication, instrumentation, or military applications. The keys to technology transfer are also different. These issues are illustrated by investigating examples of successful technology transfer of high-frequency devices at Sony. The authors opinion regarding some future applications of high-frequency devices in consumer electronics are presented. A proposal for global industrial collaboration to bring these products to a sufficient level of maturity for widespread use is made. >

Monolithic Microwave Integrated Circuits and Other Semiconductor Devices for Consumer Applications in Japan

GaAs monolithic microwave integrated circuits (MMICs) are being developed by a large number of manufacturers, and their performance is improving at a rapid pace. MMICs will be replacing thin-film MICs for an increasing number of applications at frequencies in the gigahertz range. In Japan, research and development of GaAs MMICs have emphasized consumer applications such as DBS receivers. Extensive use of lumped circuit elements has characterized the design of Japanese MMICs, although stripline circuits on GaAs semi-insulating substrates are utilized as well. Much effort is also being placed on the development of silicon technology, particularly high-speed ECL circuitry applicable both for analog and digital functions. In this paper, the status of MMIC development in Japan, both GaAs and Si, covering several application areas will be discussed. Recent topics of interest covering related devices will also be covered.

Technology transfer of high frequency devices for consumer electronics; concerns and expectations

The author discusses some of the past examples of technology transfer for consumer electronics. Historical cases are presented for investigating the key issues in transferring high-frequency technology to mass production for consumer applications. Examples of successful technology transfer of high-frequency devices at the Sony Corporation are used to illustrate these issues. The authors opinion regarding the future of high-frequency devices in consumer electronics is also presented.<<ETX>>

12 GHz low noise and low cost GaAs FET's for home use

Abstract A 0.5 micron-gate FET having a minimum noise figure of 1.25dB and a power gain of 10.0 dB at 12 GHz has been developed by an improved device structure. To reduce the cost of the FET, plastic mold packaging has also been investigated. Performance comparable to ceramic-packaged devices has been obtained by an appropriate design of the lead-frame pattern. The devices have been incorporated in a prototype 12 GHz converter, displaying satisfactory performance and confirming the feasibility of low-noise plastic-mold GaAs FETs for microwave applications.