Seiji Otake

Semiconductor device with protection element disposed around a formation region of a transistor

Semiconductor device for overvoltage protection

Electrostatic breakdown protection circuit

Semiconductor device optimized to increase withstand voltage and reduce on resistance

Method of making a transistor with a sloped drain diffusion layer

Protective circuit against electrostatic discharge damage

Isolation structure for semiconductor device including double diffusion isolation region forming PN junction with neighboring wells and isolation region beneath

Transistor, semiconductor device and manufacturing method thereof

DMOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

CIRCUIT INCLUDING A RESISTIVE ELEMENT, A DIODE, AND A SWITCH AND A METHOD OF USING THE SAME