Sen Liu

Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory

Negative-SET behavior is observed in various cation-based memories, which degrades the device reliability. Transmission electron microscopy results demonstrate the behavior is caused by the overgrowth of the conductive filament (CF) into the Pt electrode. The CF overgrowth phenomenon is suppressed and the negative-SET behavior is eliminated by inserting an impermeable graphene layer. The graphene-based devices show high reliability and satisfying performance.

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

Conductive-bridge random access memory (CBRAM) is considered a strong contender of the next-generation nonvolatile memory technology. Resistive switching (RS) behavior in CBRAM is decided by the formation/dissolution of nanoscale conductive filament (CF) inside RS layer based on the cation injection from active electrode and their electrochemical reactions. Remarkably, RS is actually a localized behavior, however, cation injects from the whole area of active electrode into RS layer supplying excessive cation beyond the requirement of CF formation, leading to deterioration of device uniformity and reliability. Here, an effective method is proposed to localize cation injection into RS layer through the nanohole of inserted ion barrier between active electrode and RS layer. Taking an impermeable monolayer graphene as ion barrier, conductive atomic force microscopy results directly confirm that CF formation is confined through the nanohole of graphene due to the localized cation injection. Compared with the typical Cu/HfO2 /Pt CBRAM device, the novel Cu/nanohole-graphene/HfO2 /Pt device shows improvement of uniformity, endurance, and retention characteristics, because the cation injection is limited by the nanohole graphene. Scaling the nanohole of ion barrier down to several nanometers, the single-CF-based CBRAM device with high performance is expected to achieve by confining the cation injection at the atomic scale.

Emulating Short-Term and Long-Term Plasticity of Bio-Synapse Based on Cu/a-Si/Pt Memristor

Short-term plasticity and long-term plasticity of bio-synapse are thought to underpin critical physiological functions in neural circuits. In this letter, we vividly emulated the short-term and long-term synaptic functions in a single Cu/a-Si/Pt memristor. By controlling the injection quantity of Cu cations into the a-Si layer, the device showed volatile and non-volatile resistive switching behaviors. Owing to the unique characteristics of Cu/a-Si/Pt device, the short-term synaptic functions, i.e., short-term potentiation, pair-pulse facilitation, and long-term functions, i.e., long-term potentiation/depression, spike-timing-dependent plasticity, were mimicked in the memristor successfully. Furthermore, the transition from short-term memory to long-term memory of the device was also observed under repeated stimuli. The experimental results confirm that the Cu/a-Si/Pt memristor with various synaptic behaviors has a potential application in the brain-inspired computing systems.

Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

Cation-based resistive switching (RS) devices, dominated by conductive filaments (CF) formation/dissolution, are widely considered for the ultrahigh density nonvolatile memory application. However, the current-retention dilemma that the CF stability deteriorates greatly with decreasing compliance current makes it hard to decrease operating current for memory application and increase driving current for selector application. By centralizing/decentralizing the CF distribution, this current-retention dilemma of cation-based RS devices is broken for the first time. Utilizing the graphene impermeability, the cation injecting path to the RS layer can be well modulated by structure-defective graphene, leading to control of the CF quantity and size. By graphene defect engineering, a low operating current (≈1 µA) memory and a high driving current (≈1 mA) selector are successfully realized in the same material system. Based on systematically materials analysis, the diameter of CF, modulated by graphene defect size, is the major factor for CF stability. Breakthrough in addressing the current-retention dilemma will instruct the future implementation of high-density 3D integration of RS memory immune to crosstalk issues.

Analysis of the Negative-SET Behaviors in Cu/ZrO2/Pt Devices

Metal oxide-based electrochemical metallization memory (ECM) shows promising performance for next generation non-volatile memory. The negative-SET behavior has been observed in various oxide-based ECM devices. But the underlying mechanism of this behavior remains unaddressed and the role of the metal cation and oxygen vacancy in this behavior is unclear. In this work, we have observed two kinds of negative-SET (labeled as N-SET1 and N-SET2) behaviors in our Cu/ZrO2/Pt devices. Both the two behaviors can result in hard breakdown due to the high compliance current in reset process. The I-V characteristic shows that the two negative-SET behaviors have an obvious difference in operation voltage. Using four-probe resistance measurement method, the resistance-temperature characteristics of the ON-state after various negative-SET behaviors have been studied. The temperature dependence results demonstrate that the N-SET1 behavior is dominated by Cu conductive filament (CF) reformation caused by the Cu CF overgrowth phenomenon while the N-SET2 is related to the formation of oxygen vacancy CF. This work may provide a comprehensive understanding of the switching mechanism in oxide-based ECM devices.

Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM

Negative-SET behavior, induced by nano-filament overgrowth phenomenon, takes major responsibility to the reset failure phenomenon in conductive bridge random access memory (CBRAM). The unexpected negative-SET behavior in CBRAM devices can result in serious reliability issues and has been an obstacle on the way to mass production. In this letter, we have proposed a back-end-of-line (BEOL) compatible TiN barrier layer to improve the device reliability in CBRAM devices by eliminating the nano-filament overgrowth phenomenon and negative-SET behavior. Thus, a higher reset voltage can be applied to the TiN barrier layer devices to achieve more complete reset process and obtain better resistive switching performance. The results show that the Cu/HfO2/TiN/Ru device with one transistor structure has excellent comprehensive memory properties, including high reliability, fast switching speed, high resistance state uniformity, high endurance, long retention, and multi-level storage ability.