Seo-Young Shin

Foreign Customers` Attitudes Towards Overseas Korean Restaurants - Focusing on Korean Restaurant Experiences and Cross-national Differences -

The purpose of this study was to propose effective marketing communication strategies for overseas Korean restaurants through a multilateral comparison analysis of American, Chinese, and Japanese consumers` attitudes towards communication media and Korean restaurants. The survey was written in English, Chinese, and Japanese, with guideline for surveyors, and conducted using both online and offline methods. Samples were collected from five major cities - Los Angeles, New York, Tokyo, Beijing and Shanghai, which are the foothold for the globalization of Korean food. When it comes to attitudes towards communication media, word-of-mouth showed a high mean value, indicating it as the most useful and reliable media recognized by consumers who visited Korean restaurants. Furthermore, the necessity of recognizing the importance of visual communication in the physical environment of Korean restaurants and specialized websites, featuring restaurants and gourmet food, was observed. Consumers in all three nations chose word-of-mouth as the most useful and reliable media for learning about Korean restaurants. In addition, American consumers highly depended on signage and restaurant exteriors. Chinese consumers highly recognized the usefulness and reliability of offline media, such as newspapers, magazines, and events, while Japanese consumers considered online media, such as gourmet websites, blogs and social networks, as useful and reliable sources. A significantly positive attitude and high value was observed in all who had visited Korean restaurants. American and Japanese consumers had a significantly higher rate of intention to visit Korean restaurants in the future and to tell others about their satisfaction with Korean restaurants. Meanwhile, the average rate of prior preference for Korean restaurants (when choosing restaurants) was the lowest in all three countries. This study is useful for both the Korean government and food enterprises abroad to plan and develop marketing communication strategies properly for overseas Korean restaurants.

Growth Temperature Effects of In 0.5 Al 0.5 As Buffer Layer on the Optical Properties of In 0.5 Ga 0.5 As/In 0.5 Al 0.5 As Multiple Quantum Wells Grown on GaAs

In 0.5 Al 0.5 As 버퍼층(buffer layer)의 성장온도 변화에 따른 In 0.5 Ga 0.5 As/In 0.5 Al 0.5 As 다중양자우물(multiple quantum wells: MQWs)의 광학적 특성을 photoluminescence (PL)와 time-resolved PL (TRPL) 측정을 이용하여 분석하였다. In 0.5 Al 0.5 As 버퍼층은 320℃에서 580℃까지 다양한 온도조건에서 1 ㎛ 성장하였으며, 그 위에 6 ㎚, 4 ㎚, 그리고 2.5 ㎚ 두께의 In 0.5 Ga 0.5 As 양자우물(quantum well)과 10 ㎚ 두께의 In 0.5 Al 0.5 As 장벽(barrier)의 MQWs을 성장하였다. 낮은 온도(320-480℃)에서 성장한 InAlAs 버퍼층의 MQWs는 4 ㎚ QW과 6 ㎚ QW로부터 모두 PL 피크가 측정되었으나, 높은 온도(320-580℃)의 버퍼층 위에 성장한 MQWs는 6 ㎚ QW에서의 PL 피크만 관찰되었다. 일정한 온도 480℃에서 성장한 버퍼층의 MQWs의 PL 세기가 가장 강하게 측정되었으며, 가장 높은 온도에서(530-580℃)에서 성장한 버퍼층의 MQWs의 PL 세기가 가장 약하게 나타났다. 이러한 PL 결과로부터 In 0.5 Al 0.5 As 버퍼층의 최적의 성장조건은 일정한 온도 480℃임을 확인하였다. 방출파장에 따른 PL 소멸시간(decay time)과 PL 스펙트럼으로부터 4 ㎚ QW과 6 ㎚ QW에서의 운반자 수명시간을 얻었다.

Growth Temperature Effects of In 0.4 Al 0.6 As Buffer Layer on the Luminescence Properties of InGaAs/InAlAs Quantum Well Structures

The luminescence properties of multiple quantum wells (MQWs) grown on buffer layer have been investigated by using photoluminescence (PL) and time-resolved PL measurements. A 1--thick buffer layers were deposited at various temperatures from to on a 500-nm-thick GaAs layer, and then 1--thick layers were deposited at , followed by the deposition of the InGaAs/InAlAs MQWs. In order to study the effects of layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of buffer layer. The MQWs consist of three wells with different well thicknesses (2.5-nm, 4.0-nm, and 6.0-nm-thick) and 10-nm-thick barriers. The PL peaks from 4-nm QW and 6-nm QW were observed. However, for the MQWs on the layer grown by using the largest growth temperature variation (320-), the PL spectrum only showed a PL peak from 6-nm QW. The carrier decay times in the 4-nm QW and 6-nm QW were measured from the emission wavelength dependence of PL decay. These results indicated that the growth temperatures of layer affect the optical properties of the MQWs.