Seong-Yong Hwang

A field-emission display with a self-focus cathode electrode

A field-emission display (5-in.) using thick-film carbon nanotube emitters is fabricated. A thick-film insulating layer and an emitter layer are employed for low-cost manufacturing and scalability to a large panel. A self-focus cathode for this display is proposed. An auxiliary electrode in contact with the cathode electrode surrounds the emitter layer at the center of gate aperture. The structure has several advantages in manufacturing. According to simulation results, this self-focus cathode structure shows excellent focusing effects in spite of its simple manufacturing process and structure.

P‐166: Microstructural Characterization of the Interface between IZO and Mo/Al/Mo Metal Line Used in TFT‐LCDs

Mo layer is used as a protective layer of Al metal line causing problems such as hillock and oxidation in TFT-LCDs. When the insulating SiNx and passivation layer is etched to form a contact hole in Mo/Al/Mo trilayered metal line, the upper Mo layer is also removed due to the lack of selectivity of the dry etching process. As a result, IZO layer appear to contact to Al directly, possibly resulting in the formation of Al2O3 increasing the contact resistivity. However, detailed investigation by TEM revealed that there are two amorphous layers, inner and outer layers, preventing the direct contact of IZO to Al layer. The inner layer was enriched with Mo, while the outer layer was enriched with Al and oxygen. Oxygen concentration was considerably reduced in front of the inner layer, indicating the Mo-rich inner layer as a barrier layer against oxygen diffusion. On the other hand, Al concentration was still higher and decreasing continuously across the inner layer, exhibiting fast Al diffusion through the inner layer. It was shown that Al-Mo alloy is able to form an amorphous phase at the interface during deposition because of large difference in melting point between Al and Mo. Based on the observed details, the interfacial amorphous layers are considered to produce thermodynamically stable phase, oxide and intermetallic compound, upon further annealing.

P-10: Mechanism of Lowering Contact Resistance between Transparent Conducting Oxide Layer and Mo/Al/Mo Layer in TFT-LCDs

It was found that the mechanism of lowering contact resistance between TCO and Mo/Al/Mo layer is the side ring contact between TCO and top Mo of Mo/Al/Mo. This is contrary to the previous results that used MoxAly interfacial layer to explain the low contact resistance of TCO and Mo/Al/Mo layer.