Sergey Kafanov

Coherent quantum phase slip

A hundred years after the discovery of superconductivity, one fundamental prediction of the theory, coherent quantum phase slip (CQPS), has not been observed. CQPS is a phenomenon exactly dual to the Josephson effect; whereas the latter is a coherent transfer of charges between superconducting leads, the former is a coherent transfer of vortices or fluxes across a superconducting wire. In contrast to previously reported observations of incoherent phase slip, CQPS has been only a subject of theoretical study. Its experimental demonstration is made difficult by quasiparticle dissipation due to gapless excitations in nanowires or in vortex cores. This difficulty might be overcome by using certain strongly disordered superconductors near the superconductor–insulator transition. Here we report direct observation of CQPS in a narrow segment of a superconducting loop made of strongly disordered indium oxide; the effect is made manifest through the superposition of quantum states with different numbers of flux quanta. As with the Josephson effect, our observation should lead to new applications in superconducting electronics and quantum metrology.

Parallel pumping of electrons

We present the simultaneous operation of ten single-electron turnstiles leading to one order of magnitude increase in current level up to 100 pA. Our analysis of device uniformity and background charge stability implies that the parallelization can be made without compromising the strict requirements of accuracy and current level set by quantum metrology. In addition, we discuss how offset charge instability limits the integration scale of single-electron turnstiles.

Experimental investigation of hybrid single-electron turnstiles with high charging energy

We present an experimental study of hybrid turnstiles with high charging energies in comparison to the superconducting gap. The device is modeled with the sequential tunneling approximation. The backtunneling effect is shown to limit the amplitude of the gate drive and thereby the maximum pumped current of the turnstile. We compare results obtained with sine and square wave drive and show how a fast rise time can suppress errors due to leakage current. Quantized current plateaus up to 160 pA are demonstrated.

Pumping properties of the hybrid single-electron transistor in dissipative environment

Pumping characteristics were studied of a hybrid normal-metal/ superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 k were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1-1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.

Strong electronic coupling between single C60 molecules and gold electrodes prepared by quench condensation at 4 K. A single molecule three terminal device study

We report the first measurements of single C60 molecules trapped in three terminal devices prepared by quench condensation of a gold source and drain electrode on top of an aluminium gate electrode covered with a thin oxide. Our experimental platform allows source and drain electrodes to be fabricated on the gate oxide at low temperatures and high vacuum. In a subsequent step, single molecules are evaporated in situ onto the surface and caught in the gap between a source and a drain electrode. This fabrication method ensures a clean contact between the molecule and the gold electrode due to the unbroken vacuum. Our measurements reveal a strong interaction between the C60 molecule and the gold electrodes resulting in the absence of the Coulomb blockade effects observed by others. In addition, we observe an insignificant gate dependence but a pronounced negative differential resistance (NDR) at bias voltages from 20-50 meV. The position of the peak in the NDR shows a pronounced and universal temperature dependence for all six devices included in the study. The results are related to previous measurements in such devices which focus on the detailed nature of the contact region between the molecule the gold electrode.

Insulating Josephson Junction Chains as Pinned Luttinger Liquids

Quantum physics in one spatial dimension is remarkably rich, yet even with strong interactions and disorder, surprisingly tractable. This is due to the fact that the low-energy physics of nearly all one-dimensional systems can be cast in terms of the Luttinger liquid, a key concept that parallels that of the Fermi liquid in higher dimensions. Although there have been many theoretical proposals to use linear chains and ladders of Josephson junctions to create novel quantum phases and devices, only modest progress has been made experimentally. One major roadblock has been understanding the role of disorder in such systems. We present experimental results that establish the insulating state of linear chains of submicron Josephson junctions as Luttinger liquids pinned by random offset charges, providing a one-dimensional implementation of the Bose glass, strongly validating the quantum many-body theory of one-dimensional disordered systems. The ubiquity of such an electronic glass in Josephson-junction chains has important implications for their proposed use as a fundamental current standard, which is based on synchronization of coherent tunneling of flux quanta (quantum phase slips).

Development of the sinis turnstile for the quantum metrological triangle

We develop a quantum current standard based on the hybrid superconductor-insulator-normal-metal-insulator-superconductor (SINIS) structure in turnstile operation. We discuss the properties of the device and the relevant error sources. We also present a preliminary plan how to implement the device in a direct quantum metrological triangle experiment.

Periodicity in Al/Ti superconducting single electron transistors

We present experiments on single Cooper-pair transistors made of two different superconducting materials. We chose Ti and Al to create an energy gap profile such that the island has a higher gap than the leads, thereby acting as a barrier to quasiparticle tunneling. Our transport measurements demonstrate that quasiparticle poisoning is suppressed in all our TiAlTi structures (higher gap for the island) with clear 2e periodicity observed, whereas full quasiparticle poisoning is observed in all AlTiAl devices (higher gap for the leads) with e periodicity.

A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures

Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nanoscale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology. ∗Electronic address: g.tettamanzi@unsw.edu.au

Single flux transistor : the controllable interplay of coherent quantum phase slip and flux quantization

The single Cooper pair josephson transistor is a device that exhibits at the same time charge quantization and phase coherence. Coherent quantum phase slip phenomenon is “dual” the Josephson phase coherence, while the charge quantization is dual to the flux quantization. We present the experimental demonstration and the theoretical description of a new superconducting device–single flux transistor, which is dual to the single Cooper pair transistor. Our transport measurements show the periodic modulation of the critical voltage by the external magnetic field. The obtained current-voltage characteristics show the hysteretic behavior, which we attribute to the intrinsic self-heating of charge carriers.