Sergey Oshemkov

CD variations correction by local transmission control of photomasks done with a novel laser-based process

As IC feature sizes become smaller and smaller, requirements for Critical Dimension (CD) variations control have become a critical issue. A new process for the control and correction of intra-field CD variations (Critical Dimension Control or CDC) was applied and its influence on defects detection and photo-masks inspection capabilities at different modes of inspection was investigated. CD Control (CDC) of the photomask is a process in which Deep UV transmittance is selectively altered by patterns of small partially scattering shading elements (Shade in ElementTm) inside the quartz. The shading elements are formed by a process of shooting an ultrafast laser beam focused inside the mask substrate, resulting in localized intra-volume breakdown inside the quartz which creates local pixels of modified index of refraction (delta n). An array of such pixels with constant density constitutes one shading element. Process patterns are predetermined according to a CD variations map which may be supplied from wafer CD SEM, Optical CD or mask aerial imaging simulation tool (AIMS). Thus by changing local photomask transmission levels, it is possible to correct for the CD variations inside the field. Attenuation level, or optical density of the shading elements depends on the laser pulse energy, distance between pixels, number of layers and the size of the shading element itself. Since photomask transmittance is being changed, qualification of the impact of the transmittance changes on the defect detection and analysis capabilities are required. In this study, the principles of patterning of scattering elements inside transparent media by focusing of ultra-short laser pulses were introduced and explained. Analysis of the effects to both mask and wafer due to the CDC process was verified by full printing process applied to wafers, and by aerial imaging simulation tool. More tests for CDC required also tests by automatic reticle inspection tool to be production-worthy for the 65nm node and beyond.

In-field CD uniformity control by altering transmission distribution of the photomask, using Ultra fast pulsed laser technology

As pattern feature sizes on the wafer become smaller and smaller, requirements for CD variation control has become a critical issue. In order to correct CD uniformity on the wafer, the DUV light transmission distribution of the photomask was altered using an ultra-fast pulsed laser technology. By creating a small scattering pixel inside the quartz body of the mask, a multitude of such points creates Shading Elements inside the quartz according to a predetermined CD variations distribution map. These Shading Elements reduce the dose of scanners laser illumination onto the wafer per a local area. Thus by changing the local light intensity, inside the exposure field, to a required level during the photolithographic process the wafer CD is changed locally inside the field. This complete process of writing a multitude of Shading Elements inside the mask in order to control the light transmission and hence wafer level CD locally is called the CD Control (CDC) process. We have evaluated the tool utilizing Ultra fast laser pulses (CDC 101) for local transmission and CD controllability on the wafer. We used Binary and Att-PSM test masks and three kinds of test patterns to confirm the sensitivity of transmission and CD change by the attenuation levels of Shading Elements which is sequentially changed from 0% to 10%. We will compare the AIMS results to printed CD on wafer or simulation results, so that we can correlate the transmission change and CD change by the attenuation levels. This paper also reports the CD uniformity correction performances by using attenuation mapping method on Binary mask. We also cover how Shading Elements affect the phase and transmission on the Att-PSM.

Irradiation resistance of intravolume shading elements embedded in photomasks used for CD uniformity control by local intra-field transmission attenuation

Intra-field CD variation is, besides OPC errors, a main contributor to the total CD variation budget in IC manufacturing. It is caused mainly by mask CD errors. In advanced memory device manufacturing the minimum features are close to the resolution limit resulting in large mask error enhancement factors hence large intra-field CD variations. Consequently tight CD Control (CDC) of the mask features is required, which results in increasing significantly the cost of mask and hence the litho process costs. Alternatively there is a search for such techniques (1) which will allow improving the intrafield CD control for a given moderate mask and scanner imaging performance. Currently a new technique (2) has been proposed which is based on correcting the printed CD by applying shading elements generated in the substrate bulk of the mask by ultrashort pulsed laser exposure. The blank transmittance across a feature is controlled by changing the density of light scattering pixels. The technique has been demonstrated to be very successful in correcting intra-field CD variations caused by the mask and the projection system (2). A key application criterion of this technique in device manufacturing is the stability of the absorbing pixels against DUV light irradiation being applied during mask projection in scanners. This paper describes the procedures and results of such an investigation. To do it with acceptable effort a special experimental setup has been chosen allowing an evaluation within reasonable time. A 193nm excimer laser with pulse duration of 25 ns has been used for blank irradiation. Accumulated dose equivalent to 100,000 300 mm wafer exposures has been applied to Half Tone PSM mask areas with and without CDC shadowing elements. This allows the discrimination of effects appearing in treated and untreated glass regions. Several intensities have been investigated to define an acceptable threshold intensity to avoid glass compaction or generation of color centers in the glass. The impact of the irradiation on the mask transmittance of both areas has been studied by measurements of the printed CD on wafer using a wafer scanner before and after DUV irradiation.

The Effect of Intra-field CD Uniformity Control (CDC) on Mask Birefringence

Mask and Wafer CD Uniformity (CDU) improvement by utilizing an ultrafast laser system for writing shading elements inside the bulk of Quartz (Qz) Photomasks has previously been shown to be an effective and practical application (1). The CD Control ( CDC) Process is working in production environments for 90 and 65 nm design rule processes which utilize KrF and ArF scanners. Advanced design rule nodes at 45 and 32 nm will utilize high and hyper NA immersion lithography, which require highly polarized light and immersion technology. Maintaining a high degree of polarization requires low birefringence (BF) of the optical path and specifically of the mask. Current mask blanks contribute between 5 to 20 nm of BF which is too high for polarized systems. This lead to the recent introduction of special low BF blanks which provide <1nm BF per mask. The CDC Process which introduces an optical element inside the quartz (Qz) mask performs a local change of the bulk Qz morphology which causes a local change in refractive index of the Qz and may induce some local BF. The induced BF, if too high, may potentially cause depolarization of the highly polarized light of hyper NA scanners. Depolarizing the light by a high degree has the potential to degrade the image contrast in the litho process The current study examined the effect of the CDC Process on the mask BF at 193 nm by writing controlled attenuation shading elements inside special low BF Qz blanks and measuring the BF induced by the CDC Process. Results: It was found that BF induced by the CDC Process is so small that its effect on loss of CDU is negligible compared to the gain in CDU. This will allow mask and IC manufactures to take advantage of Pixers CDC Process in hyper NA litho processes at 45 and 32 nm nodes.

Critical dimension control using ultrashort laser for improving wafer critical dimension uniformity

Abstract. Requirements for control of critical dimension (CD) become more demanding as the integrated circuit (IC) feature size specifications become tighter and tighter. Critical dimension control, also known as CDC, is a well-known laser-based process in the IC industry that has proven to be robust, repeatable, and efficient in adjusting wafer CD uniformity (CDU) [Proc. SPIE 6152, 615225 (2006)]. The process involves locally and selectively attenuating the deep ultraviolet light which goes through the photomask to the wafer. The input data for the CDC process in the wafer fab is typically taken from wafer CDU data, which is measured by metrology tools such as wafer-critical dimension—scanning electron microscopy (CD-SEM), wafer optical scatterometry, or wafer level CD (WLCD). The CD correction process uses the CDU data in order to create an attenuation correction contour, which is later applied by the in-situ ultrashort laser system of the CDC to locally change the transmission of the photomask. The ultrashort pulsed laser system creates small, partially scattered, Shade-In-Elements (also known as pixels) by focusing the laser beam inside the quartz bulk of the photomask. This results in the formation of a localized, intravolume, quartz modified area, which has a different refractive index than the quartz bulk itself. The CDC process flow for improving wafer CDU in a wafer fab with detailed explanations of the shading elements formation inside the quartz by the ultrashort pulsed laser is reviewed.

Jet formation upon ultrafast laser induced breakdown in the vicinity of liquid-gas interface

We have studied the phenomenon of breakdown in liquids under the action of ultrashort (160 fs) laser pulses focused in the vicinity of a flat or curved liquid-gas interface. It is established that a slightly divergent jet containing micron-sized bubbles is formed in the liquid, which originates from the laser-induced breakdown zone and propagates inward the liquid along the normal drawn to the interface from the point of laser beam focusing. The jet length depends on the distance from this focal point to the interface, as well as on the energy, and the repetition rate of laser pulses and can reach several centimeters.

Ultrafast laser induced controllable jet in liquid

Laser breakdown in liquid induced by ultrafast high repetition rate laser pulses tightly focused close to a flat or curved surface of a liquid-gas boundary is investigated. It is shown, that in case of focusing a laser beam close to the liquid - gas boundary a low divergent jet appears consisting of liquid and bubbles of micron size and less. The direction of the jet coincides with the perpendicular to the boundary surface, passing through the objective focal point. The length of the jet depends on the kind of liquid, laser pulse parameters and the distance between the beam focus point and the liquid - gas boundary and may reach several centimeters.

Controllable bumps and holes fabrication on the surface of fused silica by processing bulk material with ultrashort laser pulses

Processing of bulk transparent dielectrics with ultrashort laser pulses is widely used for direct writing of waveguides, gratings, couplers and other photonics devices inside the volume of material [1]. This technique is based on the modification of bulk glass material or voids formation, which depends on processing conditions.

Trapping a gas bubble in water with tightly focused ultrashort laser pulses

The optical trapping and manipulation of micro-particles is of great importance for micro- and nanotechnologies, as well as for biological and medical research. Traditionally, this purpose is achieved by the use of optical tweezers [1] and their various modifications [2]. Along with that, the search continues for ways to create optical traps for micro particles based on other than light pressure principles.

DUV attenuating structures in fused silica induced by ultrafsat laser radiation

In this paper we present the method for high-speed 3D structures patterning inside the volume of photomask substrate without affecting front mask surface and absorber layer using ultrafast laser and the results of investigation of DUV radiation attenuation by created structures.