Sergey V. Kurilchik

Efficient 1 W continuous-wave diode-pumped Er,Yb:YAl3(BO3)4 laser

We report the spectroscopy and high-power continuous-wave (CW) diode-pumped laser operation of Er:Yb:YAl3(BO3) crystal. Absorption and stimulated emission spectra, emission lifetimes, and efficiency of energy transfer from Yb3+ to Er3+ ions were determined. A CW Er:Yb:YAB laser emitting at 1602, 1555, and 1531 nm with output power as high as 1W and slope efficiency up to 35% was demonstrated.

Femtosecond pulse operation of a Tm,Ho-codoped crystalline laser near 2 μm

We demonstrate, for the first time to our knowledge, femtosecond-regime mode locking of a Tm,Ho-codoped crystalline laser operating in the 2 microm spectral region. Transform-limited 570 fs pulses were generated at 2055 nm by a Tm,Ho:KY(WO(4))(2) laser that produced an average output power of 130 mW at a pulse repetition frequency of 118 MHz. Mode locking was achieved using an ion-implanted InGaAsSb quantum-well-based semiconductor saturable absorber mirror.

Semiconductor nanostructures modified by the UV laser radiation

The shortening of the absorption recovery time by a factor of more than 50 is observed for the semiconductor nanostructure consisting of ten GaAs/InxGa1-xAs/GaAs quantum wells irradiated with the nanosecond pulses of the XeCl laser.A possible reason for such a significant variation in the optical properties lies in the generation of point defects,which are responsible for recombination of charge carriers.The result can be employed in the UV photomodification of optical properties of semiconductor nanostructures.

Er:KY(WO 4 ) 2 and Er:LiYF 4 Crystals for Eye-Safe In-Band Pumped Lasers

Laser operation of in-band pumped Er:KY(WO4)2 and, for the first time to our knowledge, Er:LiYF4 crystals was demonstrated. The maximal slope efficiencies of 40% and 21% were obtained for Er:KY(WO4)2 and Er:LiYF4 crystals, respectively.

Semiconductor A3B5 nanostructures for infrared femtosecond lasers

Two techniques were suggested and tested for the recovery time shortening of saturable absorbers on a base of A3B5 compounds including quantum wells. The first one, proposed by authors, is the sample post-growth treatment by UV laser radiation; it implied generation of point defects, which, in its turn, led to electron-hole recombination acceleration and to recovery time shortening by an order of magnitude and more. Another technique based on special design of barriers gave promising results for the fast saturable absorbers. Semiconductor mirrors designed for Yb3+:KY(WO4)2 infrared laser mode locking led to 115 fs stable mode-locking regime with average power close to CW operation. Results on fast saturable absorbers for spectral region of 1500 nm are also presented.

Spectroscopy and Efficient High-Power Laser Operation of Er,Yb:YAl 3 (BO 3 ) 4 Crystal at 1.5-1.6 µm

We report on the spectroscopic propertires and high-power diode-pumped CW laser operation of Er, Yb:YAl3(BO3)4 crystals at 1602, 1555 and 1531 nm. An output power of 1 W and a slope efficiency of 35% were demonstrated.