Seung-Ho Jung
Samsung
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Publication
Featured researches published by Seung-Ho Jung.
Applied Physics Letters | 2013
Bo Sung Kim; Yeon Taek Jeong; Doo-Hyoung Lee; Tae-Young Choi; Seung-Ho Jung; June Whan Choi; Chanwoo Yang; Kangmoon Jo; Byung Ju Lee; Eun-Hye Park; Doo Na Kim; Young-Min Kim; Sungtae Shin
Highly uniform thin-films of zinc-indium-tin oxide (ZITO) semiconductors were formed using solution process with wet-annealing at a low temperature of 250 °C. The solution-processed ZITO thin-film transistors with a top-gate staggered structure were fabricated to exhibit field-effect mobility of 2.04 ± 0.28 cm2/Vs at saturation region, threshold voltage (Vth) of 2.15 ± 0.75 V, subthreshold slope of 0.27 ± 0.14 V/dec. and excellent reliability (ΔVth = −4.35 V) for negative bias temperature illumination stress. Based on the performance, a 10.1 in. full-color liquid crystal display was demonstrated by the optimized full photolithography process.
Applied Physics Letters | 2000
Seung-Ho Jung; Dj Shin; Yong-Hee Lee
A high-power near-field fiber tip is proposed and demonstrated. This high-power tip can handle an optical power of greater than 150 mW injected into the fiber core, higher than any previous tip. The tip has a unique, thick, heat-conducting metal layer deposited by an electroplating process. The subwavelength aperture of the tip is fabricated by the controlled lapping of the end face with in situ optical monitoring. We also demonstrate using this tip to record on phase change and photoresist media.
asia symposium on quality electronic design | 2010
Hyung-woo Lee; Heejung So; Seung-Ho Jung; Chanseok Hwang; Jong-bae Lee; Moon-Hyun Yoo
Power consumption has become a key constraint in VLSI designs. Leakage current becomes a dominant part of the total power dissipation. In addition, with technology scaling into sub-50nm regime, one of the main design challenges in the presence of process variations is to cope with the uncertainties in timing and power. Since the leakage current is highly dominated by process variations, the statistical leakage estimation is essential for robust circuit design. Process variations can be monitored by analyzing the test element group (TEG). DRAM has power down mode with ICC2P parameter. To obtain ICC2P current, we need a long circuit-level simulation with an accurate transistor modeling. Therefore, to solve this problem, we need a practical framework which is based on switch-level and standby vector dependent statistical leakage analysis. In this paper, we proposed a TEG based analysis methodology to estimate the leakage current at ICC2P mode. Experiments on DRAM benchmark circuits demonstrate that the estimated results with our methodology are very accurate compared to the measurement data from industrial fabrication.
Archive | 2016
Seung-Ho Jung; Chaun-gi Choi; Young-Sik Yoon; Joo-Hee Jeon; Jung-Yun Jo
Archive | 2007
Sung-Hee Yun; Seung-Ho Jung; Dae-Wook Kim; Moon-Hyun Yoo; Jong-bae Lee
Archive | 2016
Seung-Ho Jung; Chaun-gi Choi; Young-Sik Yoon; Joo-Hee Jeon; Hye-young Park
Archive | 2015
Ki-Eon Lee; Seung-Ho Jung; Jin-Man Chung
Archive | 2017
Joon-seop Oh; Young-Jin Kim; Hyun-jae Shin; Young-Min Won; Sang-ung Yi; Seung-Ho Jung
Archive | 2015
Joo-Hee Jeon; Chaun-gi Choi; Young-Sik Yoon; Seung-Ho Jung
Archive | 2012
Doo Hyoung Lee; Chan Woo Yang; Seung-Ho Jung; Doo Na Kim; Bo Sung Kim; Eun Hye Park; June Whan Choi