Seung Hun Eom

Roles of interfacial modifiers in hybrid solar cells: inorganic/polymer bilayer vs inorganic/polymer:fullerene bulk heterojunction.

Hybrid solar cells (HSCs) incorporating both organic and inorganic materials typically have significant interfacial issues which can significantly limit the device efficiency by allowing charge recombination, macroscopic phase separation, and nonideal contact. All these issues can be mitigated by applying carefully designed interfacial modifiers (IMs). In an attempt to further understand the function of these IMs, we investigated two IMs in two different HSCs structures: an inverted bilayer HSC of ZnO:poly(3-hexylthiophene) (P3HT) and an inverted bulk heterojunction (BHJ) solar cell of ZnO/P3HT:[6,6]-phenyl C61-butyric acid methyl ester (PCBM). In the former device configuration, ZnO serves as the n-type semiconductor, while in the latter device configuration, it functions as an electron transport layer (ETL)/hole blocking layer (HBL). In the ZnO:P3HT bilayer device, after the interfacial modification, a power conversion efficiency (PCE) of 0.42% with improved Voc and FF and a significantly increased Jsc was obtained. In the ZnO/P3HT:PCBM based BHJ device, including IMs also improved the PCE to 4.69% with an increase in Voc and FF. Our work clearly demonstrates that IMs help to reduce both the charge recombination and leakage current by minimizing the number of defect sites and traps and to increase the compatibility of hydrophilic ZnO with the organic layers. Furthermore, the major role of IMs depends on the function of ZnO in different device configurations, either as n-type semiconductor in bilayer devices or as ETL/HBL in BHJ devices. We conclude by offering insights for designing ideal IMs in future efforts, in order to achieve high-efficiency in both ZnO:polymer bilayer structure and ZnO/polymer:PCBM BHJ devices.

Dark current reduction strategies using edge-on aligned donor polymers for high detectivity and responsivity organic photodetectors

We synthesized the conjugated polymers PT2OBT, PVT2OBT, and PFBT2OBT for use in organic photodetecting devices. An octyloxy benzothiadiazole (OBT) moiety was used as a weak electron-accepting building block in the polymer system to cause the dominant absorption in the green-light region via weakening the intramolecular charge transfer (ICT) interactions between adjacent electron-donating moieties. In particular, indirect X-ray detection using a scintillator requires a low leakage current; thus, we focused on designing a molecular structure that can enhance the detectivity. The difluorobenzene-incorporated PFBT2OBT polymer showed a strong edge-on orientation both in the pristine film and in the blend film; however, PT2OBT and PVT2OBT have no preferred molecular orientation in the blend film. In the edge-on structure, the alkyl side chains of PFBT2OBT align on the surface of the electrode, forming an insulating layer, which decreases the tunneling leakage current, whereas in the latter cases, the interface between the semiconducting polymer backbone and PC70BM can come into contact with the electrode, forming a pathway for the leakage current. Consequently, the PFBT2OBT:PC70BM devices showed promising detectivities of over 1013 Jones over a wide range of reverse biases of up to −2 V, resulting from their low dark current density of less than 2.3 × 10−9 A cm−2.

Low-Temperature Solution-Processed Thiophene-Sulfur-Doped Planar ZnO Nanorods as Electron-Transporting Layers for Enhanced Performance of Organic Solar Cells

1-D ZnO represents a fascinating class of nanostructures that are significant to optoelectronics. In this work, we investigated the use of an eco-friendly, metal free in situ doping through a pure thiophene-sulfur (S) on low temperature processed (<95 °C) and annealed (<170 °C), planar 1-D ZnO nanorods (ZnRs) spin-coated as a hole-blocking and electron transporting layer (ETL) for inverted organic solar cells (iOSCs). The TEM, HRTEM, XPS, FT-IR, EDS and Raman studies clearly reveal that the thiophene-S (Thi-S) atom is incorporated on planar ZnRs. The investigations in electrical properties suggest the enhancement in conductivity after Thi-S doping on 1-D ZnRs. The iOSCs of poly(3-hexylthiophene-2,5-diyl) and phenyl-C61-butyric acid methyl ester (P3HT: PC60BM) photoactive layer containing thiophene-S doped planar ZnRs (Thi-S-PZnRs) as ETL exhibits power conversion efficiency (PCE) of 3.68% under simulated AM 1.5 G, 100 mW cm-2 illumination. The ∼47% enhancement in PCE compared with pristine planar ZnRs (PCE = 2.38%) ETL is attributed to a combination of desirable energy level alignment, morphological modification, increased conductivity and doping effect. The universality of Thi-S-PZnRs ETL is demonstrated by the highest PCE of 8.15% in contrast to 6.50% exhibited by the iOSCs of ZnRs ETL for the photoactive layer comprising of poly[4,8-bis(5-(2-ethylhexyl)thiophene-2-yl)benzo[1,2-b;4,5-b]dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene-)-2-carboxylate-2-6-diyl)]: phenyl-C71-butyric acid methyl ester (PTB7-Th: PCB71M). This enhancement in PCE is observed to be driven mainly through improved photovoltaic parameters like fill factor (ff) as well as photocurrent density (Jsc), which are assigned to increased conductivity, exciton dissociation, and effective charge extraction, while; better ohmic contact, reduced charge recombination, and low leakage current density resulted in increased Voc.

Development of n-Type Porphyrin Acceptors for Panchromatic Light-Harvesting Fullerene-Free Organic Solar Cells

The development of n-type porphyrin acceptors is challenging in organic solar cells. In this work, we synthesized a novel n-type porphyrin acceptor, PZn-TNI, via the introduction of the electron withdrawing naphthalene imide (NI) moiety at the meso position of zinc porphyrin (PZn). PZn-TNI has excellent thermal stability and unique bimodal absorption with a strong Soret band (300–600 nm) and weak Q-band (600–800 nm). The weak long-wavelength absorption of PZn-TNI was completely covered by combining the low bandgap polymer donor, PTB7-Th, which realized the well-balanced panchromatic photon-to-current conversion in the range of 300–800 nm. Notably, the one-step reaction of the NI moiety from a commercially available source leads to the cheap and simple n-type porphyrin synthesis. The substitution of four NIs in PZn ring induced sufficient n-type characteristics with proper HOMO and LUMO energy levels for efficient charge transport with PTB7-Th. Fullerene-free organic solar cells based-on PTB7-Th:PZn-TNI were investigated and showed a promising PCE of 5.07% without any additive treatment. To the best of our knowledge, this is the highest PCE in the porphyrin-based acceptors without utilization of the perylene diimide accepting unit.

Performance Improvement in Low-Temperature-Processed Perovskite Solar Cells by Molecular Engineering of Porphyrin-Based Hole Transport Materials

Porphyrin derivatives have recently emerged as hole transport layers (HTLs) because of their electron-rich characteristics. Although several successes with porphyrin-based HTLs have been recently reported, achieving excellent solar cell performance, the chances to improve this further by molecular engineering are still open. In this work, Zn porphyrin (PZn)-based HTLs were developed by conjugating fluorinated triphenylamine (FTPA) wings at the perimeter of the PZn core for low-temperature perovskite solar cells (L-PSCs). The fluorinated PZn-HTLs (PZn-2FTPA and PZn-3FTPA) exhibited superior HTL properties compared to the nonfluorinated one (PZn-TPA). Moreover, their deeper highest occupied molecular orbital energy levels were beneficial for boosting open-circuit voltages, and their enhanced face-on stacking improved the hole transport properties. The L-PSC using PZn-2FTPA achieved the highest performance of 18.85%. Thus far, this result is one of the highest reported power conversion efficiencies among the PSCs using porphyrin-based HTLs.