Seung-min Ryu

Improved CVD-Al Thin Film Using Superior Al Precursor

We propose a method to improve Al thin film in the chemical vapor deposition (CVD) using superior Al precursor, Aluminum borohydride trimethylamine (AlBT). The deposition conditions of AlBT, which can improve factors such as sheet resistance (Rs) and reflective index (R.I.) that are related with the morphology of the CVD-Al film are optimized. The CVD-Al film by this AlBT improves via profiles and via resistance properties. Superior Al precursor, AlBT, show low particle distribution owing to its thermal-stable chemical property. These effects have AlBT to be an excellent promising precursor of CVD-Al technology to metallization process of sub 80 nm device and to be strongly production-worthy in mass production system.

A proposed porous methylhydrogensilsesquioxane-based low-k film with k~2.3 for intermetal dielectric application in high speed memory device

We introduced the novel porous low-k material with k~2.3 improved the physical properties for intermetal dielectric application in high speed memory device. Because this low-k material has both Si-H and Si-CH 3 bonds in its SiO2 film, it reduced the bowing and adhesion failure of P-HSQ and P-MSQ at via profile and metal wire. As this material was applied at device, the parasitic capacitance between metal wires was reduced till 20% compared with that of the HSQ