Seungeon Moon

Epitaxial growth of ZnO nanowall networks on GaN/sapphire substrates

Heteroepitaxy of vertically well-aligned ZnO nanowall networks with a honeycomblike pattern on GaN∕c-Al2O3 substrates by the help of a Au catalyst was realized. The ZnO nanowall networks with wall thicknesses of 80–140nm and an average height of about 2μm were grown on a self-formed ZnO thin film during the growth on the GaN∕c-Al2O3 substrates. It was found that both single-crystalline ZnO nanowalls and catalytic Au have an epitaxial relation to the GaN thin film in synchrotron x-ray scattering experiments. Hydrogen-sensing properties of the ZnO nanowall networks have also been investigated.

Scalable Assembly Method of Vertically-Suspended and Stretched Carbon Nanotube Network Devices for Nanoscale Electro-Mechanical Sensing Components

For the first time, vertically suspended and stretched carbon nanotube network junctions were fabricated in large quantity via the directed assembly strategy using only conventional microfabrication facilities. In this process, surface molecular patterns on the side-wall of the Al structures were utilized to guide the assembly and alignment of carbon nanotubes in the solution. We also performed extensive experimental (electrical and mechanical) analysis and theoretical simulation about the vertically suspended single-walled carbon nanotube network junctions. The junctions exhibited semiconductor-like conductance behavior. Furthermore, we demonstrated gas sensing and electromechanical sensing using these devices.

Highly sensitive NO2 sensor array based on undecorated single-walled carbon nanotube monolayer junctions

Using the surface-programmed assembly technique, we have fabricated a uniform array of NO2 sensors based on undecorated single-walled carbon nanotube (SWNT) monolayer junctions. The sensitivity of the SWNT monolayer network-based sensors to NO2 gas was investigated at room temperature. We have found that the response of the gas sensors is inversely proportional to the initial conductance of the SWNT network. This behavior is different from conventional gas sensors based on uniform films, and it may be critical for the calibration of sensors in practical applications. An analytical model based on standard percolation theory is proposed to explain this behavior.

Three technologies for a smart miniaturized gas-sensor: SOI CMOS, micromachining, and CNTs - challenges and performance

In this paper we propose a new type of solid-state gas sensor by combining three recent advances, namely silicon-on-insulator CMOS technology, through wafer etching and growth of gas-sensitive carbon nanotubes. We have developed novel tungsten-based CMOS micro-hotplates that offer ultra low power consumption (less than 10 mW at 250degC), on-chip CNT deposition at temperatures up to 700degC, and full integration of CMOS circuitry. Moreover, the tungsten micro-hotplates possess better stability than other CMOS materials such as polysilicon. The multi-walled CNT resistive gas sensors showed a good response to PPB levels of NO2 in air but required additional heating to provide reasonable baseline recovery times. We believe that our approach is attractive for the mass production of low-cost, low-power gas sensors in silicon foundries.

Planar and Parallel Dielectric Properties of Compositionally Graded (Ba, Sr)TiO3 Thin Films for Tunable Microwave Applications

Compositionally graded (Bax,Sr1 − x)TiO3 [BST] ferroelectric thin films have been received much attention in graded ferroelectric devices due to their unique properties, such as large pyroelectric coefficients, large polarization offset and small temperature coefficient of dielectric constant for microwave tunable devices. Compositionally graded BST thin films were deposited epitaxially on LaAlO3 [LAO] and Nb-doped SrTiO3 [STO:Nb] substrates by pulsed laser deposition. The planar and parallel dielectric properties of compositionally graded BST epitaxial thin films ware investigated in the frequency ranges of 100 Hz ∼ 1 MHz as a function of the direction of the composition gradient with respect to the substrate at room temperature. The dielectric properties of the graded BST films depended strongly on the direction of the composition gradient with respect to the substrate. The graded ST → BT films grown on LAO and STO:Nb substrates exhibited a excellent dielectric properties than the graded BT → ST films.

Low-Frequency Dielectric Responses of Barium Strontium Titanate Thin Films with Conducting Perovskite LaNiO3 Electrode

Highly (h00)-oriented (Ba,Sr)TiO3 [BST] thin films were deposited by pulsed laser depositi on on the perovskite LaNiO3 metallic oxide layer as a bottom electrode. The LaNiO3 films were deposited on SiO2/Si substrates by the rf-magnetron sputtering method. The crystal line phases of the BST film were characterized by X-ray θ–2θ, ω-rocking curve and Φ-scan diffraction measurements. The surface microstructure observed by scanning electron mi croscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxations in the measured frequency region. The origins of these low-frequency dielectric relaxations are attributed to ionized space charge carriers such as the oxygen vacancies and defects in the BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We also studied the capacitance-voltage characteristics of BST films.

Bio-information scanning technology using an optical pick-up head.

We have developed a low cost and a highly compact bio-chip detection technology by modifying a commercially available optical pick-up head for CD/DVD. The highly parallel and miniaturized hybridization assays are addressed by the fluorescence emitted by the DNA-chip using the optical pick-up head. The gap between the objective lens and the bio-chip is regulated by the focus servo during the detection of the fluorescence signal. High-resolution and high-speed scanning is effectively realized by this simple scanning system instead of utilizing high-precision mechanism. Regardless of achievement of effective detection mechanism, the technique of fluorescence detection can prove to be disadvantageous because of the low stability of the dyes with low S/N ratio and an expensive setup such as a PMT detector is always required for fluorescence detection. We propose, for the first time, a novel scanning scheme based on metal nanoparticles in combination with a bio-chip substrate having a phase change recording layer. We found that the phase change process is highly affected by the existence of the densely condensed metal nanoparticles on the phase change layer during the writing process of the pick-up head.

Optimum Reflection-Type Phase Shifter Using (Ba,Sr)TiO3 Thin Film

In this paper, in order to obtain a large differential phase shift with a little change in applied voltage, a ferroelectric reflective load circuit has been designed on top of barium strontium titanate (Ba,Sr)TiO3 [BST] thin film. The design of the ferroelectric reflection-type phase shifter is based on a reflection theory of terminating circuit, which has a reflection-type analogue phase shifter with two ports terminated in symmetric phase-controllable reflective networks. To achieve large amounts of phase shift in low bias-voltage range, the effects of change of capacitance and transmission line connected with two coupled ports of a 3-dB 90° branch-line hybrid coupler have been investigated. A large phase shift with a small capacitance change in the parallel terminating circuit has been demonstrated in the paper.

Wideband aperture coupled stacked patch type microstrip to waveguide transition for V-band

A compact aperture coupled patch type microstrip-to-waveguide transition at V-band is proposed and fabricated using LTCC(Low Temperature Co-fired Ceramic) process. It uses the aperture coupled microstrip feed and the parasitic patch antenna radiating into the waveguide to improve the insertion loss and the bandwidth. As a result of experiments, low transmission loss and high return loss are realized at the design frequency of 60 GHz. For a 10 dB return loss, a relative bandwidth of 13.8% is obtained for a fabricated back to back transition.

Structure of Ferroelectric (Ba,Sr)TiO3 Thin Films for Tunable Microwave Devices

Ferroelectric (Ba,Sr)TiO3 films have been deposited on (001) MgO single crystals by a pulsed laser deposition with oxygen background while heating the substrates. Deposited BST films exhibit epitaxial growth along (001), which are confirmed by x-ray diffraction measurement. Structure of (Ba,Sr)TiO3 along in-plane and surface normal direction have been investigated and found to have a tetragonal distortion depend on the deposition conditions, such as oxygen pressure. Lattice parameter decreases with increasing oxygen pressure, and tetragonallity (c/a) changes from 1.005 to 0.997 as oxygen pressure increase. Interestingly, energy gap measured by FTIR decreases with decreasing oxygen pressure until it reach a certain oxygen pressure, then increases again with increasing oxygen pressure. Furthermore, microwave properties of devices measured by a HP 8510C vector network analyzer from 0.045–20 GHz suggest that the least distorted films exhibit a larger dielectric constant changes with dc bias field.