Seungmin Seen

Study on the Quantitativity of Image Sticking in the Fringe-field Switching(FFS) Mode

We studied the quantitativity of the image sticking which is occured by the resicual DC in the fringe-electric field switching (FFS) mode. Actually, in the FFS mode driven by the strong fringe electric field, the asymmetric residual DC was formed in the bottom substrate. It made the impurity ion stick to the alignment layer such as polyimde layer. Thus, the differnece of the luminance existes after the stress check pattern is applied to the panel so that we can see the image sticking. This image sticking decreases as the residual DC value between specific patterns decreases. Therefore, it is necessary to control the residual DC for the FFS mode with the high image quality. It is possible to eliminate the image stiking when the extra pixel voltage is applied through the circuit tunning for reducing the difference of residual DC accroding to the panel position.

Study on the Pixel Design for the Prerrue-stable Fringe-field Switching (FFS) Mode with 3 Slit Structure

We studied the external pressure-stable advanced frnge field switching (FFS) pixel design with 3 slit sructue. In this mode, a patterned pixel slit is partitioned into 3 areas, namely, two edges and a center, where the edge slit angle is larger than the center slit angle. Thus the reverse twist region in the pixel edge is reduced comparing to the conventional FFS mode so that the LC dynamics in this region becomes very stable. And also, when the external pressure is applied to the panel at the high voltage, the disclination lines (DLs) were barely intruded into active area. Therefore, the structure is use for the pen based system such as the tablet personal computer (PC), personal digital asistant (PDA).

Study on the Effect of the Operation Voltage according to the Reverse Twist for the fringe Field Switching (FFS) Mode

We have studied on the effect of the operation voltage according to the reverse twist for the different fringe field switching (FFS) structure. The FFS structure with a vertically patterned edge of the pixel electrode (VPP) has lower operation voltage comparing to the one with a horizontally patterned edge of the pixel electrode (HPP). The reason is like that the number of the pattern of the pixel edge for the VPP structure is one third comparing with the HPP structure and thus, there is small reverse twist area for the VPP structure. Actually, the reverse twist disturbs the twist of LC near adjacent active area, result that LCs near there have the unstable dynamics. That is, the operation voltage increases as the reverse twist area increases. Therefore, it is very important to design pixel electrode with a small reverse twist region for the FFS mode.