SeungNam Cha

Porous PVDF As Effective Sonic Wave Driven Nanogenerators

Piezomaterials are known to display enhanced energy conversion efficiency at nanoscale due to geometrical effect and improved mechanical properties. Although piezoelectric nanowires have been the most widely and dominantly researched structure for this application, there only exist a limited number of piezomaterials that can be easily manufactured into nanowires, thus, developing effective and reliable means of preparing nanostructures from a wide variety of piezomaterials is essential for the advancement of self-powered nanotechnology. In this study, we present nanoporous arrays of polyvinylidene fluoride (PVDF), fabricated by a lithography-free, template-assisted preparation method, as an effective alternative to nanowires for robust piezoelectric nanogenerators. We further demonstrate that our porous PVDF nanogenerators produce the rectified power density of 0.17 mW/cm3 with the piezoelectric potential and the piezoelectric current enhanced to be 5.2 times and 6 times those from bulk PVDF film nanogenerators under the same sonic-input.

P-Type Polymer-Hybridized High-Performance Piezoelectric Nanogenerators

Enhancing the output power of a nanogenerator is essential in applications as a sustainable power source for wireless sensors and microelectronics. We report here a novel approach that greatly enhances piezoelectric power generation by introducing a p-type polymer layer on a piezoelectric semiconducting thin film. Holes at the film surface greatly reduce the piezoelectric potential screening effect caused by free electrons in a piezoelectric semiconducting material. Furthermore, additional carriers from a conducting polymer and a shift in the Fermi level help in increasing the power output. Poly(3-hexylthiophene) (P3HT) was used as a p-type polymer on piezoelectric semiconducting zinc oxide (ZnO) thin film, and phenyl-C(61)-butyric acid methyl ester (PCBM) was added to P3HT to improve carrier transport. The ZnO/P3HT:PCBM-assembled piezoelectric power generator demonstrated 18-fold enhancement in the output voltage and tripled the current, relative to a power generator with ZnO only at a strain of 0.068%. The overall output power density exceeded 0.88 W/cm(3), and the average power conversion efficiency was up to 18%. This high power generation enabled red, green, and blue light-emitting diodes to turn on after only tens of times bending the generator. This approach offers a breakthrough in realizing a high-performance flexible piezoelectric energy harvester for self-powered electronics.

Highly effective separation of semiconducting carbon nanotubes verified via short-channel devices fabricated using dip-pen nanolithography.

We have verified a highly effective separation of semiconducting single-walled carbon nanotubes (sc-SWNTs) via statistical analysis of short-channel devices fabricated using multipen dip-pen nanolithography. Our SWNT separation technique utilizes a polymer (rr-P3DDT) that selectively interacts with and disperses sc-SWNTs. Our devices had channel lengths on the order of 300-500 nm, with an average of about 3 SWNTs that directly connected the source-drain electrodes. A total of 140 SWNTs were characterized, through which we have observed that all of the SWNTs exhibited semiconducting behavior with an average on/off current ratio of ~10(6). Additionally, we have characterized 50 SWNTs after the removal of rr-P3DDT, through which we have again observed semiconducting behavior for all of the SWNTs with similar electrical characteristics. The relatively low average on-conductance of 0.0796 μS was attributed to the distribution of small diameter SWNTs in our system and due to the non-ohmic Au contacts on SWNTs. The largely positive threshold voltages were shifted toward zero after vacuum annealing, indicating that the SWNTs were doped in air. To the best of our knowledge, this is the first time numerous SWNTs were electrically characterized using short-channel devices, through which all of the measured SWNTs were determined to be semiconducting. Hence, our semiconducting single-walled carbon nanotube sorting system holds a great deal of promise in bringing forth a variety of practical applications in SWNT electronics.

High Performance PbS Quantum Dot/Graphene Hybrid Solar Cell with Efficient Charge Extraction

Hybrid colloidal quantum dot (CQD) solar cells are fabricated from multilayer stacks of lead sulfide (PbS) CQD and single layer graphene (SG). The inclusion of graphene interlayers is shown to increase power conversion efficiency by 9.18%. It is shown that the inclusion of conductive graphene enhances charge extraction in devices. Photoluminescence shows that graphene quenches emission from the quantum dot suggesting spontaneous charge transfer to graphene. CQD photodetectors exhibit increased photoresponse and improved transport properties. We propose that the CQD/SG hybrid structure is a route to make CQD thin films with improved charge extraction, therefore resulting in improved solar cell efficiency.

In Situ Synthesis and Characterization of Ge Embedded Electrospun Carbon Nanostructures as High Performance Anode Material for Lithium-Ion Batteries

While active materials based on germanium (Ge) are considered as a promising alternative anodic electrode due to their relatively high reversible capacity and excellent lithium-ion diffusivity, the quite unstable structural/electrochemical stability and severe volume expansion or pulverization problems of Ge electrodes remain a considerable challenge in lithium ion batteries (LIBs). Here, we present the development of Ge embedded in one-dimensional carbon nanostructures (Ge/CNs) synthesized by the modified in situ electrospinning technique using a mixed electrospun solution consisting of a Ge precursor as an active material source and polyacrylonitrile (PAN) as a carbon source. The as-prepared Ge/CNs exhibit superior lithium ion behavior properties, i.e., highly reversible specific capacity, rate performance, Li ion diffusion coefficient, and superior cyclic stability (capacity retention: 85% at 200 mA g(-1)) during Li alloying/dealloying processes. These properties are due to the high electrical conductivity and unique structures containing well-embedded Ge nanoparticles (NPs) and a one-dimensional carbon nanostructure as a buffer medium, which is related to the volume expansion of Ge NPs. Thus, it is expected that the Ge/CNs can be utilized as a promising alternative anodic material in LIBs.

Surface energy-mediated construction of anisotropic semiconductor wires with selective crystallographic polarity

ZnO is a wide band-gap semiconductor with piezoelectric properties suitable for opto-electronics, sensors, and as an electrode material. Controlling the shape and crystallography of any semiconducting nanomaterial is a key step towards extending their use in applications. Whilst anisotropic ZnO wires have been routinely fabricated, precise control over the specific surface facets and tailoring of polar and non-polar growth directions still requires significant refinement. Manipulating the surface energy of crystal facets is a generic approach for the rational design and growth of one-dimensional (1D) building blocks1234. Although the surface energy is one basic factor for governing crystal nucleation and growth of anisotropic 1D structures, structural control based on surface energy minimization has not been yet demonstrated56789. Here, we report an electronic configuration scheme to rationally modulate surface electrostatic energies for crystallographic-selective growth of ZnO wires. The facets and orientations of ZnO wires are transformed between hexagonal and rectangular/diamond cross-sections with polar and non-polar growth directions, exhibiting different optical and piezoelectrical properties. Our novel synthetic route for ZnO wire fabrication provides new opportunities for future opto-electronics, piezoelectronics, and electronics, with new topological properties.

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS2 optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of ∼4,700 (73.4 dB) coupled with a low OFF-state current (<4 pA), and a long storage lifetime of over 104 s. In addition, the multi-level detection of up to 8 optical states is successfully demonstrated. These results represent a significant step toward the development of future monolayer optoelectronic memory devices.

A pseudo-capacitive chalcogenide-based electrode with dense 1-dimensional nanoarrays for enhanced energy density in asymmetric supercapacitors

To achieve the further development of supercapacitors (SCs), which have intensively received attention as a next-generation energy storage system, the rational design of active electrode materials with an electrochemically more favorable structure is one of the most important factors to improve the SC performance with high specific energy and power density. We propose and successfully grow copper sulfide (CuS) nanowires (NWs) as a chalcogenide-based electrode material directly on a Cu mesh current collector using the combination of a facile liquid–solid chemical oxidation process and an anion exchange reaction. We found that the as-prepared CuS NWs have well-arrayed structures with nanosized crystal grains, a high aspect ratio and density, as well as a good mechanical and electrical contact to the Cu mesh. The obtained CuS NW-based electrodes, which were binder- and conductive material-free, exhibit a much higher areal capacitance of 378.0 mF cm−2 and excellent cyclability of approximately 90.2% retention during 2000 charge/discharge cycles due to their unique structural, electrical, and electrochemical properties. Furthermore, for practical SC applications, an asymmetric supercapacitor is fabricated using active carbon as an anode and CuS NWs as a cathode, and exhibits the good capacitance retention of 91% during 2000 charge/discharge processes and the excellent volumetric energy density of 1.11 mW h cm−3 compared to other reported pseudo-capacitive SCs.

Highly Monodispersed PbS Quantum Dots for Outstanding Cascaded-Junction Solar Cells

High-performance cascaded-junction quantum dot solar cells (CJQDSCs) are fabricated from as-prepared highly monodispersed lead sulfide QDs. The cells have a high power conversion of 9.05% and a short-circuit current density of 32.51 mA cm–2. A reliable and effective stratagem for fabricating high-quality lead sulfide quantum dots (QD) is explored through a “monomer” concentration-controlled experiment. Robust QDSC performances with different band gaps are demonstrated from the as-proposed synthesis and processing stratagems. Various potential CJQDSCs can be envisioned from the band edge evolution of the QDs as a function of size and ligands reported here.

Self-assembled two-dimensional copper oxide nanosheet bundles as an efficient oxygen evolution reaction (OER) electrocatalyst for water splitting applications

A high activity of a two-dimensional (2D) copper oxide (CuO) electrocatalyst for the oxygen evolution reaction (OER) is presented. The CuO electrode self-assembles on a stainless steel substrate via chemical bath deposition at 80 °C in a mixed solution of CuSO4 and NH4OH, followed by air annealing treatment, and shows a 2D nanosheet bundle-type morphology. The OER performance is studied in a 1 M KOH solution. The OER starts to occur at about 1.48 V versus the RHE (η = 250 mV) with a Tafel slope of 59 mV dec−1 in a 1 M KOH solution. The overpotential (η) of 350 mV at 10 mA cm−2 is among the lowest compared with other copper-based materials. The catalyst can deliver a stable current density of >10 mA cm−2 for more than 10 hours. This superior OER activity is due to its adequately exposed OER-favorable 2D morphology and the optimized electronic properties resulting from the thermal treatment.