Sh. O. Shakhshaev
Russian Academy of Sciences
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Featured researches published by Sh. O. Shakhshaev.
Technical Physics Letters | 2001
B. M. Ataev; I. K. Kamilov; W. V. Lundin; V. V. Mamedov; A. K. Omaev; Sh. O. Shakhshaev
The first results on the preparation of (0001)ZnO/(0001)GaN/(0001) α-Al2O3 heteroepitaxial structures by CVD in a low-pressure flow-type reactor are reported. Study of the surface morphology and X-ray diffraction patterns showed high structural perfection of the zinc oxide layer, with a block misorientation in the basal plane not exceeding 21′. The photoluminescence spectra of samples exhibited dominating emission in the exciton region.
Technical Physics Letters | 2000
A. Kh. Abduev; A. K. Akhmedov; V. G. Baryshnikov; Sh. O. Shakhshaev
The conditions and mechanisms of the growth of hollow crystals, dendrite structures, and whiskers of zinc oxide during the annealing of pressed zinc oxide-carbon mixtures were studied. The growth of hollow structures is due to the interaction of reagents in pressed tablets, which is accompanied by the formation of a gas-impermeable external ZnO shell and the transport of Zn vapor and CO2 along the growing tube. Orientation of the hollow crystals is determined by the direction of Zn vapor transport. The process was modeled by the Zn vapor emission from a Knudsen effusion cell.
Technical Physics Letters | 2000
B. M. Ataev; I. K. Kamilov; A. M. Bagamadova; V. V. Mamedov; S. Sh. Makhmudov; A. K. Omaev; Sh. O. Shakhshaev
AbstractThe first results on the controlled growth of quasibicrystal structures containing interblock boundaries in epitaxial zinc oxide layers on sapphire (α-Al2O3) are reported. The structures with boundaries oriented in a preset direction can be used as a base for submicron microelectronic devices. Using the method of buffer layers, it is possible to obtain highly oriented layers of
Technical Physics Letters | 2003
Sh. M. Aliev; I. K. Kamilov; Sh. O. Shakhshaev; A. A. Abdullaev
Technical Physics Letters | 2000
Sh. M. Aliev; I. K. Kamilov; A. Kh. Abduev; Sh. O. Shakhshaev
(11\bar 20)ZnO
Russian Physics Journal | 2004
Sh. M. Aliev; I. K. Kamilov; M. M. Guseinov; Sh. O. Shakhshaev; A. Kh. Abduev
Journal of Magnetism and Magnetic Materials | 2010
Sh. M. Aliev; I. K. Kamilov; M.M. Guseynov; S.M. Kallaev; M. Sh. Aliev; V. V. Mamedov; Sh. O. Shakhshaev
and (0001)ZnO with clear boundaries between blocks on the same
Inorganic Materials | 1997
A. Kh. Abduev; A. M. Magomedov; Sh. O. Shakhshaev
Russian Physics Journal | 2006
Sh. M. Aliev; I. K. Kamilov; M. M. Guseinov; M. S. Aliev; Sh. O. Shakhshaev; S. V. Larin
(10\bar 12)Al_2 O_3
Russian Physics Journal | 2005
Sh. M. Aliev; I. K. Kamilov; M. M. Guseinov; Sh. O. Shakhshaev; M. Sh. Aliev