Shan Fukai

High-Performance InTiZnO Thin-Film Transistors Deposited by Magnetron Sputtering

InTiZnO thin-film transistors (ITZO TFTs) with Al2O3 gate dielectrics are fabricated by magnetron sputtering at room temperature. The bottom-gate-type ITZO TFTs with amorphous Al2O3 gate dielectrics are operated in the enhancement mode and exhibit a mobility of 50.4 cm2/Vs, threshold voltage of 1.2 V, subthreshold swing of 94.5 mV/decade, and on/off-current ratio of 7 × 106. We believe that ITZO deposited at room temperature is an appropriate semiconductor material to produce high-mobility TFTs for developing flexible electronic devices.

Structural and Raman Analysis of Antimony-Implanted ZnMnO Films

Antimony ions were implanted into ZnMnO films grown on silicon (Si) by radio-frequency magnetron sputtering. The implanted samples were treated by rapid thermal annealing and investigated by X-ray photoelectron spectroscopy, X-ray diffraction and Raman scattering. In the wurtzite of ZnMnO, both manganese (Mn) and stibium (Sb) substituted the lattice position of zinc (Zn). The ZnMnO films were characterized by Raman scattering at 522 cm−1, attributed to a local vibration of Mn. After implantation with Sb ions, two new peaks 681 cm−1 and 823 cm−1 were observed in the ZnMnO films, as a result of ion-induced damage to the lattice.