Shan-Wen Tsai

Electronic doping and scattering by transition metals on graphene

We investigate the effects of transition metals (TM) on the electronic doping and scattering in graphene using molecular-beam epitaxy combined with in situ transport measurements. The room-temperature deposition of TM onto graphene produces clusters that dope

Metal-insulator-like behavior in semimetallic bismuth and graphite

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Electron waves in chemically substituted graphene

type for all TM investigated (Ti, Fe, and Pt). We also find that the scattering by TM clusters exhibits different behavior compared to

Infrared probe of the anomalous magnetotransport of highly oriented pyrolytic graphite in the extreme quantum limit

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Theory of scanning tunneling spectroscopy of magnetic adatoms in graphene.

Coulomb scattering. At high coverage, Pt films are able to produce doping that is either

Scanning tunneling microscopy currents on locally disordered graphene

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Renormalization-group approach to strong-coupled superconductors

type or weakly

Tunneling of correlated electrons in an ultrahigh magnetic field

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Competing types of order in two-dimensional bose-fermi mixtures

type, which provides experimental evidence for a strong interfacial dipole favoring

Orbital symmetry fingerprints for magnetic adatoms in graphene

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