Shang Xiangjun
Chinese Academy of Sciences
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Publication
Featured researches published by Shang Xiangjun.
Journal of Physics D | 2011
He Ji-Fang; Wang Hai-Li; Shang Xiangjun; Zhu Yan; Wang Lijuan; Yu Ying; Ni Haiqiao; Xu Yingqiang; Niu Zhichuan
Molecular beam epitaxy growth of GaAs-based long-wavelength metamorphic InAs/InGaAs quantum dots (QDs) is investigated. With optimized multi-step-graded InGaAs metamorphic buffer layers and growth conditions, room temperature 1.46 µm emission from InAs/In0.15Ga0.85As QDs is realized, and broad-area laser diodes are fabricated with a very low etch pit defect density of less than 5.0 × 103 cm−2. The lasers operate under pulsed operation mode at room temperature with a low threshold current density of 146.7 A cm−2.
Archive | 2013
Zha Guowei; Yu Ying; Wang Lijuan; Xu Jianxing; Shang Xiangjun; Ni Haiqiao; He Zhenhong; Niu Zhichuan
Archive | 2013
Shang Xiangjun; Ni Haiqiao; Zha Guowei; Yu Ying; Wang Lijuan; Xu Jianxing; Niu Zhichuan
Archive | 2014
Yu Ying; Zha Guowei; Xu Jianxing; Shang Xiangjun; Ni Haiqiao; He Zhenhong; Niu Zhichuan
Archive | 2014
Zha Guowei; Niu Zhichuan; Ni Haiqiao; Shang Xiangjun; He Zhenhong
Archive | 2013
Yu Ying; He Ji-Fang; Zha Guowei; Shang Xiangjun; Ni Haiqiao; He Zhenhong; Niu Zhichuan
Archive | 2017
Ma Ben; Ni Haiqiao; Shang Xiangjun; Chen Zesheng; Niu Zhichuan
Nanoscale | 2017
Yu Ying; Wei Yuming; Wang Jing; Li Jia-Hua; Shang Xiangjun; Ni Haiqiao; Niu Zhichuan; Wang Xuehua; Yu Siyuan
Archive | 2016
Ma Ben; Chen Zesheng; Shang Xiangjun; Ni Haiqiao; Niu Zhichuan
Materials Science in Semiconductor Processing | 2016
Zhang Li-Chun; Geng Xuewen; Zha Guowei; Xu Jianxing; Wei Sihang; Ma Ben; Chen Zesheng; Shang Xiangjun; Ni Haiqiao; Niu Zhichuan
Collaboration
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