上野昌紀

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The Review of Laser Engineering | 2010

塩谷陽平; 善積祐介; 京野孝史; 足立真寛; 住友隆道; 徳山慎司; 秋田勝史; 池上隆俊; 上野昌紀; 片山浩二; 中村孝夫

520 nm true green lasing was demonstrated by using InGaN based laser diodes (LDs) on novel semipolar {202 1} GaN substrates under continuous-wave (cw) operation at room temperature. The longest lasing wavelength reached 531 nm under pulsed operation, which indicates that the semi-polar {202 1} LDs are able to cover over the whole green region. Utilization of a novel {202 1} plane improved the homogeneity of In composition and thickness of the InGaN quantum wells (QWs) even at high In composition, which was exhibited with narrower spectral widths of spontaneous emission from LDs than those on other planes. Moreover, the homogeneity was indicated by uniform photoluminescence image and abrupt QW’s interfaces from scanning transmission electron microscopy. The high quality InGaN QWs on the {202 1} plane advanced the realization of the green LDs.

Archive | 2010

Takashi Kyono; 孝史京野; Yohei Enya; 陽平塩谷; Yusuke Yoshizumi; 祐介善積; Katsushi Akita; 秋田勝史; Masaki Ueno; 上野昌紀; Takamichi Sumitomo; 隆道住友; Masahiro Adachi; 真寛足立; Shinji Tokuyama; 慎司徳山

Archive | 2009

Masaki Ueno; 上野昌紀; Yohei Enya; 陽平塩谷; Takashi Kyono; 孝史京野; Katsushi Akita; 秋田勝史; Yusuke Yoshizumi; 祐介善積; Takamichi Sumitomo; 隆道住友; Takao Nakamura; 中村孝夫

Archive | 2012

Yohei Enya; 陽平塩谷; Yusuke Yoshizumi; 祐介善積; Takashi Kyono; 孝史京野; Takamichi Sumitomo; 隆道住友; Masaki Ueno; 上野昌紀; Katsunori Yanashima; 簗嶋克典; Kunihiko Tasai; 邦彦田才; Hiroshi Nakajima; 中島博

Archive | 2015