Shannon B. Hill

Magneto-Optical-Trap-Based, High Brightness Ion Source for Use as a Nanoscale Probe

We report on the demonstration of a low emittance, high brightness ion source based on magneto-optically trapped neutral atoms. Our source has ion optical properties comparable to or better than those of the commonly used liquid metal ion source. In addition, it has several advantages that offer new possibilities, including high resolution ion microscopy with ion species tailored for specific applications, contamination-free ion milling, and nanoscale implantation of a variety of elements, either in large quantities, or one at a time, deterministically. Using laser-cooled Cr atoms, we create an ion beam with a normalized rms (root-mean-square) emittance of 6.0 x 10 (-7) mm mrad M e V and approximately 0.25 pA of current, yielding a brightness as high as 2.25 A cm (-2) sr (-1) eV (-1). These values of emittance and brightness show that, with suitable ion optics, an ion beam with a useful amount of current can be produced and focused to spot sizes of less than 1 nm.

Atoms on demand: Fast, deterministic production of single Cr atoms

We have realized a method for producing single Cr atoms on demand by suppressing the stochastic nature of the loading and loss processes of a magneto-optic trap. We observe single-atom trap occupation probabilities as high as (98.7±0.1)% and demonstrate ejection with greater than 90% efficiency at rates up to 10 Hz. Monte Carlo simulations agree well with extraction measurements and are used to predict ultimate performance. Such a deterministic atom source has potential applications in nanotechnology, quantum information processing, and fundamental quantum investigations.

Nanotechnology with atom optics

Abstract A brief review of atom optics is presented, with emphasis on how it can be applied in the field of nanotechnology. Two specific examples are discussed: laser-focused atomic deposition and deterministic production of single atoms. Results are summarized for these two techniques, and discussion is presented on how they can impact progress in the development of nanotechnology.

Accelerated lifetime metrology of EUV multilayer mirrors in hydrocarbon environments

The ability to predict the rate of reflectivity loss of capped multilayer mirrors (MLMs) under various conditions of ambient vacuum composition, intensity, and previous dose is crucial to solving the mirror lifetime problem in an EUV stepper. Previous measurements at NIST have shown that reflectivity loss of MLMs exposed under accelerated conditions of dose and pressure can be a very complicated function of these variables. The present work continues this effort and demonstrates that reflectivity loss does not scale linearly for accelerated exposure doses over the range of 0-350 J/mm2 either for partial pressures of MMA in the range 10-8-10-7 Torr or acetone in the range 10-7-10-6 Torr. We suggest that this nonlinear scaling may be the result of a varying damage rate as the surface of the growing contamination layer moves through the EUV standing wave created by exposure of any MLM to resonant radiation. To further investigate the potential influence of these resonance effects, we report new measurements showing large variations of the secondary electron yield as a function of thickness of carbon deposited on top of a MLM.

Resonance effects in photoemission from TiO2-capped Mo/Si multilayer mirrors for extreme ultraviolet applications

In the unbaked vacuum systems of extreme ultraviolet (EUV) lithography steppers, oxide formation and carbon growth on Mo/Si multilayer mirrors (MLMs) are competing processes leading to reflectivity loss. A major contribution to this mirror degradation is a series of surface reactions that are thought to be driven in large part by photoemitted electrons. In this paper, we focus on the resonance effects in photoemission from Mo/Si MLMs protected by thin TiO2 cap layers. In the vicinity of the resonant energy of the mirror, the energy flux of the EUV radiation forming standing wave oscillates throughout the multilayer stack. As a result, light absorption followed by the emission of photoelectrons becomes a complex process that varies rapidly with depth and photon energy. The electron emission is characterized as a function of the EUV photon energy, the angle of incidence, and the position of the standing wave with respect to the solid/vacuum interface. In our experiments, the position of the standing wave wa...

Measuring the EUV-induced contamination rates of TiO2-capped multilayer optics by anticipated production-environment hydrocarbons

The primary, publicly reported cause of optic degradation in pre-production extreme-ultraviolet (EUV) lithography systems is carbon deposition. This results when volatile organics adsorb onto optic surfaces and then are cracked by EUV-induced reactions. Hence the deposition rate depends on the adsorption-desorption kinetics of the molecule-surface system as well as the basic photon-stimulated reaction rates, both of which may vary significantly for different organic species. The goal of our ongoing optics-contamination program is to estimate the contamination rate of species expected in the tool environment by exposing samples to in-band 13.5 nm light from our synchrotron in the presence of fixed partial pressures of admitted gases. Here we report preliminary results of contamination rates on TiO2-capped samples for species observed in resist-outgassing measurements (benzene, isobutene, toluene and tert-butylbenzene) in the pressure range (10-6 to 10-4) Pa which all display an unexpected logarithmic dependence on pressure. This scaling is in agreement with previous EUV exposures of other species at NIST as well as independent measurements of coverage performed at Rutgers University. These results are consistent with a molecular desorption energy that decreases with coverage due to molecular interactions (Temkin model). Use of the proper scaling law is critical when estimating optic lifetimes by extrapolating over the 3-to-6 orders of magnitude between accelerated-testing and tool-environment partial pressures.

Critical parameters influencing the EUV-induced damage of Ru-capped multilayer mirrors

Endurance testing of Ru-capped multilayer mirrors (MLMs) at the NIST synchrotron facility has revealed that the damage resulting from EUV irradiation in a water-dominated environment is nonlinear and may be influenced by competing oxidation and carbon-deposition processes. Concurrent results from two different environmental chambers reveal non-intuitive relationships between reflectivity loss and the admitted water-vapor partial pressure, the ambient background-gas composition, the presence or absence of hot filaments in the chamber, the EUV intensity and the irradiation dose. We discuss possible mechanisms and propose further experiments to test them. Determining the MLM lifetime from accelerated tests is a very difficult task. It is crucial that any lifetime testing procedure involves duplicate exposures for consistency, and, if possible, testing in multiple facilities.

Optics contamination studies in support of high-throughput EUV lithography tools

We report on optics contamination rates induced by exposure to broad-bandwidth, high-intensity EUV radiation peaked near 8 nm in a new beamline at the NIST synchrotron. The peak intensity of 50 mW/mm2 allows extension of previous investigations of contamination by in-band 13.5 nm radiation at intensities an order of magnitude lower. We report nonlinear pressure and intensity scaling of the contamination rates which is consistent with the earlier lower-intensity studies. The magnitude of the contamination rate per unit EUV dose, however, was found to be significantly lower for the lower wavelength exposures. We also report an apparent dose-dependent correlation between the thicknesses as measured by spectroscopic ellipsometry and XPS for the carbon deposits created using the higher doses available on the new beamline. It is proposed that this is due to different sensitivities of the metrologies to variations in the density of the deposited C induced by prolonged EUV irradiation.

The NIST EUV facility for advanced photoresist qualification using the witness-sample test

Before being used in an extreme-ultraviolet (EUV) scanner, photoresists must be qualified to ensure that they will not excessively contaminate the scanner optics or other parts of the vacuum environment of the scanner. At the National Institute of Standards and Technology we have designed and constructed a high-throughput beamline on the Synchrotron Ultraviolet Radiation Facility (SURF III) in order to provide data on the contamination potential of the outgas products of a candidate resist by simultaneously irradiating a witness substrate and a nearby resist-coated wafer with EUV radiation, the so called witness sample test that is currently the resist qualification method required by ASML. We will present results from four sample resists that were subjected to the test. Although the witness-sample test based on irradiating the resist with EUV radiation at 13.5 nm most closely reproduces conditions in a scanner, the limited availability of suitable EUV sources to conduct such tests has led to development of an alternative method which uses e-beam irradiation in place of EUV radiation. We will also present the results of a comparison of these two methods.

EUV Lithography optics contamination and lifetime studies

In this paper we discuss surface phenomena leading to contamination of multilayer optics designed for Extreme Ultraviolet (EUV) lithography. Experimental data supported by calculations indicate dramatic influence of resonance structure of EUV mirror on the secondary electron yield. These low energy electrons play an important role in radiation chemistry at the mirror surface. We also discuss the dependence on the partial pressure of admitted gas of equilibrium surface coverage and contamination rate under EUV irradiation.