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Dive into the research topics where Shannon G. Starnes is active.

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Featured researches published by Shannon G. Starnes.


Applied Surface Science | 1997

Energy spectra of electrons and positrons emitted from surfaces as a result of low energy positron bombardment

A.H. Weiss; E. Jung; J.H. Kim; A. Nangia; Ranjani Venkataraman; Shannon G. Starnes; G. Brauer

Abstract Recent measurements of the energy spectra of electrons and positrons emitted from metal and semiconductor surfaces as a result of bombardment with low energy electrons and positrons are reviewed. The high resolution positron re-emission spectra show a close correspondence with that part of the electron induced electron spectrum termed ‘redistributed primaries’ while positron impact-induced secondary electrons show a close correspondence with that part of the electron induced electron spectrum termed ‘true secondaries’. Positron re-emission data from a SiC(0001) surface indicate that this surface has a negative positron workfunction. Peaks in the positron induced electron spectra for Ge(100) and SiC(0001) corresponding to Auger electrons resulting from the annihilation of positrons trapped in a surface state with core electrons in the surface layer are identified and discussed. Additional evidence for the existence of a positron surface state on SiC is provided by data indicating thermal desorption of positronium (Ps).


21st International Conference on Application of Accelerators in Research and Industry, CAARI 2010 | 2011

Positron Annihilation Induced Auger Electron Spectroscopic Studies Of Reconstructed Semiconductor Surfaces

Nail G. Fazleev; J. A. Reed; Shannon G. Starnes; A.H. Weiss

The positron annihilation induced Auger spectrum from GaAs(100) displays six As and three Ga Auger peaks below 110 eV corresponding to M4,5VV, M2M4V, M2,3M4,5M4,5 Auger transitions for As and M2,3M4,5M4,5 Auger transitions for Ga. The integrated Auger peak intensities have been used to obtain experimental annihilation probabilities of surface trapped positrons with As 3p and 3d and Ga 3p core level electrons. PAES data is analyzed by performing calculations of positron surface and bulk states and annihilation characteristics of surface trapped positrons with relevant Ga and As core level electrons for both Ga‐ and As‐rich (100) surfaces of GaAs, ideally terminated, non‐reconstructed and with (2×8), (2×4), and (4×4) reconstructions. The orientation‐dependent variations of the atomic and electron densities associated with reconstructions are found to affect localization of the positron wave function at the surface. Computed positron binding energy, work function, and annihilation characteristics demonstrate...


Radiation Physics and Chemistry | 2000

Studies of the Auger spectrum from the (100) surface of GaAs using positron annihilation induced Auger electron spectroscopy

Nail G. Fazleev; Shannon G. Starnes; A.H. Weiss; J. L. Fry


Materials Science Forum | 1997

The Study of Secondary Electrons and Redistributed Primaries (Electrons and Positrons) from Ge(100) Surface Utilizing the Electron and the Positron Beams

E. Jung; Ranjani Venkataraman; Shannon G. Starnes; A.H. Weiss


Radiation Physics and Chemistry | 2003

Studies of the Auger spectrum from the Si(111) surface using positron annihilation induced Auger electron spectroscopy

Nail G. Fazleev; J. L. Fry; Shannon G. Starnes; A.H. Weiss


Archive | 2001

Measurements of the Relative Backscattering Yields of Positrons and Electrons from GaAs (100), Ge (100), Si(100)

Wu-Chi Chen; Shannon G. Starnes; A.H. Weiss


Archive | 2001

Annihilation of positrons trapped at the As-rich (100) surface of GaAs

Nail G. Fazleev; J. L. Fry; Wu-Chi Chen; Shannon G. Starnes; A.H. Weiss


Archive | 2001

Annihilation Characteristics of Positrons Trapped at the Surfaces of Ge, Si, GaAs, Cu, and Ag using Positron annihilation induced Auger Electron Spectroscopy (PAES)

Shannon G. Starnes; Nial Fazleev; E. Jung; Amy Zhou; J. L. Fry; A.H. Weiss


Archive | 2000

Low energy positrons at the Ga-rich (100) surface of GaAs

Nail G. Fazleev; J. L. Fry; Shannon G. Starnes; A.H. Weiss


Archive | 2000

The growth and stability of ultra-thin Al films epitaxially grown on GaAs(100) studied using Positron Annihilation induced Auger Electron Spectroscopy (PAES) and Electron induced Auger Electron Spectroscopy (EAES)

Wu-Chi Chen; Richi Nayak; Shannon G. Starnes; Nail G. Fazleev; J. L. Fry; A.H. Weiss

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A.H. Weiss

University of Texas at Arlington

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Nail G. Fazleev

University of Texas at Arlington

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J. L. Fry

University of Texas at Arlington

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Wu-Chi Chen

University of Texas at Arlington

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Ranjani Venkataraman

University of Texas at Arlington

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E. Jung

University of Texas at Arlington

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A. Nangia

University of Texas at Arlington

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H.Q. Zhou

University of Texas at Arlington

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J. A. Reed

University of Texas at Arlington

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J.H. Kim

University of Texas at Arlington

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