Shao Jun
Chinese Academy of Sciences
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Shao Jun.
Chinese Physics Letters | 2015
Chen Xiren; Song Yuxin; Zhu Liangqing; Qi Zhen; Zhu Liang; Zha Fangxing; Guo Shao-Ling; Wang Shumin; Shao Jun
GaSb(Bi)/Al0.2Ga0.8Sb single quantum wells are characterized by a Fourier transform infrared spectrometerbased photoreflectance method at 77 K. Spatially direct and indirect transitions between the electronic levels at and above the effective band gap are well resolved. The shifts of the electronic levels with Bi incorporation are identified quantitatively. The results show that the upshift of the valence band edge is clarified to be dominant, while the Bi-induced downshift of the conduction band edge does exist and contributes to the band gap reduction in the GaSbBi quantum-well layer by (29±6)%.
Chinese Physics Letters | 2011
Ma Li-Li; Shao Jun; Lü Xiang; Guo Shao-Ling; Lu Wei
Spectral resolution effects on the lineshape of photoreflectance (PR) spectroscopy is experimentally investigated. PR measurements are performed on HgCdTe epilayer and InAs/GaAs quantum dot (QD) low-dimensional samples at low temperatures in a spectral resolution range from 8 to 0.5 meV. The results indicate that the resolution affects not only the identification of narrow PR features, but also the determination of critical-point energies of identified PR features, and a spectral resolution of as high as 0.5 meV may be necessary for low-dimensional semiconductors. The spectral resolution is indeed a crucial parameter, for which the step-scan Fourier transform infrared spectrometer-based PR technique is preferable.
Chemical Research in Chinese Universities | 2018
Zhang Tianning; Zhang Kenan; Chen Xiren; Wang Shuxia; Zhang Rongjun; Shao Jun; Chen Xin; Dai Ning
——————————— *Corresponding authors. Email: [email protected]; [email protected] Received December 20, 2017; accepted February 9, 2018. Supported by the National Key R&D Program of China(No.2016YFA0202200) and the Fund of the Youth Innovation Promotion Association of Chinese Academy of Sciences(CAS) and the Humboldt(AvH).
Journal of Infrared and Millimeter Waves | 2009
Chu Junhao; Lu Wei; He Li; Guo Shao-Ling; Li Zhi-Feng; Wu Jun; Lü Xiang; Shao Jun; Ma Li-Li
Recent progress of infrared photoreflectance and modulated photoluminescence techniques was outlined with special attention focused on the significant improvement of signal-to-noise ratio,spectral resolution and time consumption relative to the conventional techniques.Application of these techniques to molecular beam epitaxially grown HgCdTe films was given as examples,from which the potential impact of the techniques was foreseen on the optical study of narrow-gap semiconductors and inter-subband transition of wide-gap semiconductors with low-dimensional structures.
Archive | 2015
Shao Jun; Chen Xiren; Lv Xiang; Zhu Liang; Qi Zhen
Archive | 2014
Shao Jun; Chen Xiren
Archive | 2014
Shao Jun; Chen Xiren
Archive | 2014
Shao Jun; Zhu Liang; Chen Xiren
Semiconductor Science and Technology | 2017
Pan Wenwu; Zhang Liyao; Zhu Liang; Song Yuxin; Li Yaoyao; Wang Chang; Wang Peng; Wu Xiaoyan; Zhang Fan; Shao Jun; Wang Shumin
Archive | 2017
Shao Jun; Chen Xiren