Shaoren Deng

Germanium surface passivation and atomic layer deposition of high-k dielectrics?a tutorial review on Ge-based MOS capacitors

Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel material (offering a mobility gain of approximately??2 for electrons and??4 for holes when compared to conventional Si channels). However, many issues still need to be addressed before Ge can be implemented in high-performance field-effect-transistor (FET) devices. One of the key issues is to provide a high-quality interfacial layer, which does not lead to substantial drive current degradation in both low equivalent oxide thickness and short channel regime. In recent years, a wide range of materials and processes have been investigated to obtain proper interfacial properties, including different methods for Ge surface passivation, various high-k dielectrics and metal gate materials and deposition methods, and different post-deposition annealing treatments. It is observed that each process step can significantly affect the overall metal?oxide?semiconductor (MOS)-FET device performance. In this review, we describe and compare combinations of the most commonly used Ge surface passivation methods (e.g. epi-Si passivation, surface oxidation and/or nitridation, and S-passivation) with various high-k dielectrics. In particular, plasma-based processes for surface passivation in combination with plasma-enhanced atomic layer deposition for high-k depositions are shown to result in high-quality MOS structures. To further improve properties, the gate stack can be annealed after deposition. The effects of annealing temperature and ambient on the electrical properties of the MOS structure are also discussed.

Atomic layer deposition-based synthesis of photoactive TiO2 nanoparticle chains by using carbon nanotubes as sacrificial templates

Highly ordered and self supported anatase TiO2 nanoparticle chains were fabricated by calcining conformally TiO2 coated multi-walled carbon nanotubes (MWCNTs). During annealing, the thin tubular TiO2 coating that was deposited onto the MWCNTs by atomic layer deposition (ALD) was transformed into chains of TiO2 nanoparticles (∼12 nm diameter) with an ultrahigh surface area (137 cm2 per cm2 of substrate), while at the same time the carbon from the MWCNTs was removed. Photocatalytic tests on the degradation of acetaldehyde proved that these forests of TiO2 nanoparticle chains are highly photoactive under UV light because of their well crystallized anatase phase.

Nanostructured TiO2/carbon nanosheet hybrid electrode for high-rate thin-film lithium-ion batteries

Heterogeneous nanostructured electrodes using carbon nanosheets (CNS) and TiO2 exhibit high electronic and ionic conductivity. In order to realize the chip level power sources, it is necessary to employ microelectronic compatible techniques for the fabrication and characterization of TiO2-CNS thin-film electrodes. To achieve this, vertically standing CNS grown through a catalytic free approach on a TiN/SiO2/Si substrate by plasma enhanced chemical vapour deposition (PECVD) was used. The substrate-attached CNS is responsible for the sufficient electronic conduction and increased surface-to-volume ratio due to its unique morphology. Atomic layer deposition (ALD) of nanostructured amorphous TiO2 on CNS provides enhanced Li storage capacity, high rate performance and stable cycling. The amount of deposited TiO2 masks the underlying CNS, thereby controlling the accessibility of CNS, which gets reflected in the total electrochemical performance, as revealed by the cyclic voltammetry and charge/discharge measurements. TiO2 thin-films deposited with 300, 400 and 500 ALD cycles on CNS have been studied to understand the kinetics of Li insertion/extraction. A large potential window of operation (3-0.01 V); the excellent cyclic stability, with a capacity retention of 98% of the initial value; and the remarkable rate capability (up to 100 C) are the highlights of TiO2/CNS thin-film anode structures. CNS with an optimum amount of TiO2 coating is proposed as a promising approach for the fabrication of electrodes for chip compatible thin-film Li-ion batteries.

Air-based photoelectrochemical cell capturing water molecules from ambient air for hydrogen production

A system is demonstrated that autonomously produces hydrogen gas using sunlight and outside air as the only inputs. Oxygen and hydrogen formation reactions occur on either side of a monolithic “solar membrane” inserted in a two-compartment photoelectrochemical cell. A surface film of Nafion® serves as a solid electrolyte. This proof of concept invites further development of air-based cells.

Synthesis of uniformly dispersed anatase nanoparticles inside mesoporous silica thin films via controlled breakup and crystallization of amorphous TiO2 deposited using atomic layer deposition

Amorphous titanium dioxide was introduced into the pores of mesoporous silica thin films with 75% porosity and 12 nm average pore diameter via Atomic Layer Deposition (ALD) using alternating pulses of tetrakis(dimethylamino)titanium and water. Calcination provoked fragmentation of the deposited amorphous TiO2 phase and its crystallization into anatase nanoparticles inside the nanoporous film. The narrow particle size distribution of 4 ± 2 nm and the uniform dispersion of the particles over the mesoporous silica support were uniquely revealed using electron tomography. These anatase nanoparticle bearing films showed photocatalytic activity in methylene blue degradation. This new synthesis procedure of the anatase nanophase in mesoporous silica films using ALD is a convenient fabrication method of photocatalytic coatings amenable to application on very small as well as very large surfaces.

Porous nanostructured metal oxides synthesized through atomic layer deposition on a carbonaceous template followed by calcination

Porous metal oxides with nano-sized features attracted intensive interest in recent decades due to their high surface area which is essential for many applications, e.g. Li ion batteries, photocatalysts, fuel cells and dye-sensitized solar cells. Various approaches have so far been investigated to synthesize porous nanostructured metal oxides, including self-assembly and template-assisted synthesis. For the latter approach, forests of carbon nanotubes are considered as particularly promising templates, with respect to their one-dimensional nature and the resulting high surface area. In this work, we systematically investigate the formation of porous metal oxides (Al2O3, TiO2, V2O5 and ZnO) with different morphologies using atomic layer deposition on multi-walled carbon nanotubes followed by post-deposition calcination. X-ray diffraction, scanning electron microscopy accompanied by X-ray energy dispersive spectroscopy and transmission electron microscopy were used for the investigation of morphological and structural transitions at the micro- and nano-scale during the calcination process. The crystallization temperature and the surface coverage of the metal oxides and the oxidation temperature of the carbon nanotubes were found to produce significant influence on the final morphology.

Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

Metal-oxide-semiconductor capacitor was fabricated using in situ O2 plasma passivation and subsequent deposition of a HfO2 high-k gate stack on Ge. By extracting flat band voltages from capacitors with different equivalent oxide thicknesses (EOT), the effect of forming gas annealing (FGA) and O2 ambient annealing on the fixed charge was systematically investigated. The O2 ambient annealing is more effective than FGA as it reduced fixed charge density to 8.3 × 1011 cm−2 compared to 4.5 × 1012 cm−2 for at the same thermal budget and showed no degradation of EOT. Further, the distribution of fixed charges in gate stack was discussed in detail.

High-Performance Ge MOS Capacitors by

Very promising capacitance-voltage (C-V) characteristics of capacitors on both p- and n-type Ge substrates are demonstrated by using an in situ O₂ plasma passivation and an O₂ ambient annealing. The capacitors exhibited a small equivalent oxide thickness of ~1.5 nm and a low D_it (<; 6 * 10¹¹ cm^-2eV^-1) energy distribution covering the major part of the Ge bandgap (>; 0.51 eV). The surface potential modulation efficiency was estimated to be ~80% from Hatband to strong inversion on both types of Ge. C-V hysteresis was less than 10 mV with positive bias up to 1.5 V. A low gate leakage current density of <; 9 * 10^-8 A/cm² at V_FB ± 1 V indicates high quality of the HfO₂/GeO₂ gate stacks. Excellent comprehensive properties suggest that a combination of O₂ plasma passivation and O₂ ambient annealing provides a promising technology for GeO₂-based CMOS devices.

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In order to narrow the band gap of TiO2, nitrogen doping by combining thermal atomic layer deposition (TALD) of TiO2 and plasma enhanced atomic layer deposition (PEALD) of TiN has been implemented. By altering the ratio between TALD TiO2 and PEALD TiN, the as synthesized TiOxNy films showed different band gaps (from 1.91 eV to 3.14 eV). In situ x-ray diffraction characterization showed that the crystallization behavior of these films changed after nitrogen doping. After annealing in helium, nitrogen doped TiO2 films crystallized into rutile phase while for the samples annealed in air a preferential growth of the anatase TiO2 along (001) orientation was observed. Photocatalytic tests of the degradation of stearic acid were done to evaluate the effect of N doping on the photocatalytic activity.

Plasma Passivation and

Vanadium pentoxide (V2O5) is proposed and investigated as a cathode material for lithium-ion (Li-ion) batteries. However, the dissolution of V2O5 during the charge/discharge remains as an issue at the V2O5-electrolyte interface. In this work, we present a heterogeneous nanostructure with carbon nanotubes supported V2O5/titanium dioxide (TiO2) multilayers as electrodes for thin-film Li-ion batteries. Atomic layer deposition of V2O5 on carbon nanotubes provides enhanced Li storage capacity and high rate performance. An additional TiO2 layer leads to increased morphological stability and in return higher electrochemical cycling performance of V2O5/carbon nanotubes. The physical and chemical properties of TiO2/V2O5/carbon nanotubes are characterized by cyclic voltammetry and charge/discharge measurements as well as electron microscopy. The detailed mechanism of the protective TiO2 layer to improve the electrochemical cycling stability of the V2O5 is unveiled.