Shekhar Bhagat

Effect of Copper Addition on Electromigration Behavior of Silver Metallization

This study investigates the effect of Cu alloying on electromigration behavior of Ag metallization. Electromigration tests are performed on pure Ag and Ag (1.5% Cu) samples deposited by e-beam evaporation. The experiments show that Ag (Cu) alloy interconnect has superior elctromigration resistance compared to pure Ag interconnect. X-ray diffraction, four point probe measurements and electron microscopy were used to investigate the test structures and corresponding thin film samples. The Cu improves the lifetime of interconnect test structures by hindering Ag diffusion and increasing 111 texture of Ag. Also, Cu addition seemingly reduces the agglomeration in Ag.

A Study of Tungsten-Titanium Barriers in Silver Metallization

This work investigated the viability of tungsten-titanium barrier layers for silver metallization. Reactive sputtered W-Ti was deposited on a Si wafer followed by an Ag thin film over layer. These samples were then annealed in vacuum at temperatures up to 700 °C. Characterization of these samples included using x-ray diffractometry, Rutherford backscattering spectrometry, scanning transmission microscopy, secondary ion mass spectroscopy, transmission electron microscopy, and four point probe analysis. The results indicated that the metal/diffusion barrier stack was stable up to 600 °C. Silicon started moving into the tungsten-titanium film at temperatures above 600 °C. Movement of Si resulted in local Si voiding. These results showed the promise of W-Ti as an effective barrier layer for silver metallization for process temperatures below 600 °C.