Shen Ruiqi

Atomic Emission Spectra Diagnosis and Electron Density Measurement of Semiconductor Bridge (SCB) Plasma

Emission spectra of a semiconductor bridge (SCB) plasma in a visible range was studied in air. The electron density was measured in a conventional way from the broadening of the A1 I 394.4 nm Stark width. Based on the Saha equation, a system for recording the intensity of Si I 390.5 nm and Si II 413.1 nm was designed. With this technique, the SCB plasma electron density was measured well and accurately. Moreover, the electron density distribution Vs time was acquired from one SCB discharge. The individual result from the broadening of the Al I 394.4 nm Stark width and Saha equation was all in the range of 1015 cm−3 to 1016 cm−3. Finally the presumption of the local thermodynamic equilibrium (LTE) condition was validated.

Characteristics testing of one-shot switch

The characteristics of one-shot switch for the exploding foil initiators system (EFIS) are researched. The switch is fabricated based on micro-fabrication. The palsma temperature of the switching process is analyzed by using the method of the atomic emission spectroscopy double line technique. The shock pressure of Schottky Barrier Diode (SBD) electro-explosive is tested by Polyvinylidene Fluoride (PVDF) film. The problem of ablation on PVDF during testing is solved by using PMMA. The measured peak shock pressure is in MPa magnitude.