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Dive into the research topics where Shengqiang Zhou is active.

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Featured researches published by Shengqiang Zhou.


Applied Physics Letters | 2008

Room temperature ferromagnetism in ZnO films due to defects

Qingyu Xu; Heidemarie Schmidt; Shengqiang Zhou; K. Potzger; Manfred Helm; H. Hochmuth; M. Lorenz; A. Setzer; P. Esquinazi; Christoph Meinecke; Marius Grundmann

ZnO films were prepared by pulsed laser deposition on a-plane sapphire substrates under N2 atmosphere. Ferromagnetic loops were obtained with the superconducting quantum interference device at room temperature, which indicate a Curie temperature much above room temperature. No clear ferromagnetism was observed in intentionally Cu-doped ZnO films. This excludes that Cu doping into ZnO plays a key role in tuning the ferromagnetism in ZnO. 8.8% negative magnetoresistance probed at 5K at 60kOe on ferromagnetic ZnO proves the lack of s-d exchange interaction. Anomalous Hall effect (AHE) was observed in ferromagnetic ZnO as well as in nonferromagnetic Cu-doped ZnO films, indicating that AHE does not uniquely prove ferromagnetism. The observed ferromagnetism in ZnO is attributed to intrinsic defects.


Applied Physics Letters | 2008

Room temperature ferromagnetism in carbon-implanted ZnO

Shengqiang Zhou; Qingyu Xu; K. Potzger; Georg Talut; R. Grötzschel; J. Fassbender; Mykola Vinnichenko; J. Grenzer; Manfred Helm; H. Hochmuth; M. Lorenz; Marius Grundmann; Heidemarie Schmidt

Unexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [H. Pan et al., Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce carbon into ZnO films by ion implantation. Room temperature ferromagnetism has been observed. Our analysis demonstrates that (1) C-doped ferromagnetic ZnO can be achieved by an alternative method, i.e., ion implantation, and (2) the chemical involvement of carbon in the ferromagnetism is indirectly proven.


Physical Review B | 2008

Crystallographically oriented Co and Ni nanocrystals inside ZnO formed by ion implantation and postannealing

Shengqiang Zhou; K. Potzger; J. von Borany; R. Grötzschel; W. Skorupa; Manfred Helm; J. Fassbender

In the last decade, transition-metal-doped ZnO has been intensively investigated as a route to room-temperature diluted magnetic semiconductors (DMSs). However, the origin for the reported ferromagnetism in ZnO-based DMS remains questionable. Possible options are diluted magnetic semiconductors, spinodal decomposition, or secondary phases. In order to clarify this question, we have performed a thorough characterization of the structural and magnetic properties of Co- and Ni-implanted ZnO single crystals. Our measurements reveal that Co or Ni nanocrystals (NCs) are the major contribution of the measured ferromagnetism. Already in the as-implanted samples, Co or Ni NCs have formed and they exhibit superparamagnetic properties. The Co or Ni NCs are crystallographically oriented with respect to the ZnO matrix. Their magnetic properties, e.g., the anisotropy and the superparamagnetic blocking temperature, can be tuned by annealing. We discuss the magnetic anisotropy of Ni NCs embedded in ZnO concerning the strain anisotropy.


Applied Physics Letters | 2006

Fe implanted ferromagnetic ZnO

K. Potzger; Shengqiang Zhou; H. Reuther; A. Mücklich; F. Eichhorn; N. Schell; W. Skorupa; Manfred Helm; J. Fassbender; T. Herrmannsdörfer; T. Papageorgiou

Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-doping with Fe ions.The four samples implanted initially have been analyzed using SQUID (superconducting quantum interference device) magne-tometry. It was found that only two of them, i.e. the HFHT and the LFLT samples exhibit a pronounced hysteresis loop upon magnetization reversal at 5 K and 300 K. As was found using synchrotron X-ray diffraction, transmission electron microscopy and conversion electron Mossbauer spectroscopy (CEMS) the origin of the ferromagnetic properties of the HFHT-sample are tiny alpha-Fe-nanoparticles with a mean diameter of 8 nm. At 180 keV Fe implanted ZnO single crystals can develop ferromagnetic properties that are either caused by alpha-Fe nanoparticles or an indirect coupling of the Fe ions in a DMS system, depending on the details of ion fluence and implantation temperature. In any case sophisticated structural characterization is required in order to rule out secondary phases.


Physical Review B | 2009

Origin of magnetic moments in defective TiO 2 single crystals

Shengqiang Zhou; E. Cizmar; K. Potzger; M. Krause; G. Talut; M. Helm; J. Fassbender; S. A. Zvyagin; J. Wosnitza; H. Schmidt

In this Brief Report we show that ferromagnetism can be induced in pure


Journal of Applied Physics | 2011

Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt

Yao Shuai; Shengqiang Zhou; Danilo Bürger; Manfred Helm; Heidemarie Schmidt

{\text{TiO}}_{2}


Journal of Applied Physics | 2006

Ferromagnetic Gd-implanted ZnO single crystals

K. Potzger; Shengqiang Zhou; F. Eichhorn; Manfred Helm; W. Skorupa; A. Mücklich; J. Fassbender; T. Herrmannsdörfer; A. Bianchi

single crystals by oxygen ion irradiation. By combining x-ray diffraction, Raman scattering, and electron-spin resonance spectroscopy, a defect complex, i.e.,


Journal of Applied Physics | 2011

Decisive role of oxygen vacancy in ferroelectric versus ferromagnetic Mn-doped BaTiO3 thin films

Yao Shuai; Shengqiang Zhou; Danilo Bürger; Helfried Reuther; Ilona Skorupa; Varun John; Manfred Helm; Heidemarie Schmidt

{\text{Ti}}^{3+}


Applied Physics Letters | 2015

Giant low field magnetocaloric effect and field-induced metamagnetic transition in TmZn

Lingwei Li; Ye Yuan; Yikun Zhang; Takahiro Namiki; Katsuhiko Nishimura; Rainer Pöttgen; Shengqiang Zhou

ions on the substitutional sites accompanied by oxygen vacancies, has been identified in irradiated


Physical Review Letters | 2008

Spin Manipulation in Co-Doped ZnO

Qingyu Xu; Lars Hartmann; Shengqiang Zhou; Arndt Mcklich; Manfred Helm; G. Biehne; H. Hochmuth; M. Lorenz; Marius Grundmann; Heidemarie Schmidt

{\text{TiO}}_{2}

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Manfred Helm

Helmholtz-Zentrum Dresden-Rossendorf

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Heidemarie Schmidt

Chemnitz University of Technology

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K. Potzger

Helmholtz-Zentrum Dresden-Rossendorf

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W. Skorupa

Helmholtz-Zentrum Dresden-Rossendorf

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Shavkat Akhmadaliev

Helmholtz-Zentrum Dresden-Rossendorf

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J. Fassbender

Helmholtz-Zentrum Dresden-Rossendorf

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Ye Yuan

Helmholtz-Zentrum Dresden-Rossendorf

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Slawomir Prucnal

Helmholtz-Zentrum Dresden-Rossendorf

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Roman Böttger

Helmholtz-Zentrum Dresden-Rossendorf

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