Shengxiang Huang

Magnetoelectric properties of lead-free (80Bi0.5Na0.5TiO3-20Bi0.5K0.5TiO3)-Ni0.8Zn0.2Fe2O4 particulate composites prepared by in situ sol-gel

Lead-free multiferroic ceramics consisting of (1-x) (80Bi0.5Na0.5TiO3-20Bi0.5K0.5TiO3) (BNT-BKT)-xNi0.8Zn0.2Fe2O4 (NZFO) (x = 0, 0.15, 0.25, 0.35, and 0.45) were synthesized by the in situ sol-gel method. The structural, ferroelectric, piezoelectric, ferromagnetic, and magnetoelectric (ME) properties were measured as a function of the NZFO content x. The results showed that the coexistence of BNT-BKT and NZFO phases and the presence of the morphotropic phase boundary in the BNT-BKT phase with a high piezoelectric coefficient d33 (∼131 pC/N) were confirmed. The composites exhibited a homogeneous microstructure and well-combined interfaces between the magnetostrictive and piezoelectric phases, as well as an improved ME response. The largest ME voltage coefficient (αME) of 42.41 mV/cm Oe was achieved for the 0.65(BNT-BKT)-0.35NZFO composite, which is in fact the highest one reported so far for lead-free particulate ME composites fabricated via in situ processing.

Electromagnetic responses of magnetic conductive hollow fibers

Electromagnetic parameters for a magnetic conductive hallow fiber have been derived, and the anisotropy of the magnetic permeability and the electric permittivity for a hollow fiber was demonstrated theoretically. The axial parameters μ// and ɛ// are the key factors related to electromagnetic characteristics of the hollow fiber. Simulations have been carried out to study the axial permeability μ//, and axial permittivity ɛ// of a magnetic conductive hallow fiber with different geometric, and electrical parameters such as diameter, aspect ratio and conductivity The simulations carried out reveal several interesting properties of the hallow fiber’s electromagnetic parameters. (1) The parameters μ′//, μ″//, ɛ′// and ɛ″// all decrease with increasing outer radius from 0.5 to 6 µm. (2) When the aspect ratio of the hallow fiber is above 30 µm, μ′// and μ″// remain at constant, while, ɛ′// and ɛ″// are found to increase. (3) The parameters μ′//, μ″//, and ɛ′// all decrease with increasing conductivity, however ɛ...

Mirrored OLED pixel circuit for threshold voltage and mobility compensation with IGZO TFTs

In this paper, pixel circuit using mirroring structure with Indium-Gallium-Zinc oxide (IGZO) thin film transistors (TFTs) for active matrix organic light emitting diode (AMOLED) display is proposed. This pixel circuit consists of only four TFTs, and one capacitor. Due to the mirroring structure, characteristic of the driving TFT can be precisely sensed by the sensing TFT, which is deployed in a discharging path for gate electrode of the driving TFT. This discharging process is strongly dependent on threshold voltage (VT) and effective mobility of the sensing TFT. Circuit operating details are discussed, and compensation effects for threshold voltage shift and mobility variations are verified through numerical derivation and SPICE simulations. Furthermore, compared with conventional schematics, the proposed pixel circuit might have much simplified external driving circuits, and it is a promising alternative solution of high performance AMOLED display.

Analytical drain current model for symmetric dual-gate amorphous indium gallium zinc oxide thin-film transistors

An analytical drain current model based on the surface potential is proposed for amorphous indium gallium zinc oxide (a-InGaZnO) thin-film transistors (TFTs) with a synchronized symmetric dual-gate (DG) structure. Solving the electric field, surface potential (S), and central potential (0) of the InGaZnO film using the Poisson equation with the Gaussian method and Lambert function is demonstrated in detail. The compact analytical model of current–voltage behavior, which consists of drift and diffusion components, is investigated by regional integration, and voltage-dependent effective mobility is taken into account. Comparison results demonstrate that the calculation results obtained using the derived models match well with the simulation results obtained using a technology computer-aided design (TCAD) tool. Furthermore, the proposed model is incorporated into SPICE simulations using Verilog-A to verify the feasibility of using DG InGaZnO TFTs for high-performance circuit designs.

Effect of temperature on dielectric response in X-band of silicon nitride ceramics prepared by gelcasting

Due to the drastic aerodynamic heating effect in supersonic aircrafts, the operational performance of wave-transmitting dielectric ceramics functionalized radomes strongly depends on the temperature and oxidation. In this paper, the evolution of microwave dielectric responses in Si3N4 ceramics via gelcasting over a wide temperature range (25°C∼800°C) is investigated experimentally and theoretically. Specifically, the relative increment rate of real permittivity over evaluated temperature range is 4.46% at 8.2GHz and 8.67% at 12.4GHz, while the imaginary permittivity remains less than 0.06. Taking temperature-dependent polarized bound charge and damping coefficient into consideration, a revised dielectric relaxation model with Lorentz correction for Si3N4 ceramics has been established, which agrees well with evolution of experimental results. Furthermore, the best fitting results indicate that the activation energy of electrons Ea (15.46 ∼17.49 KJ/mol) is less than that of lattice Eb (33.29∼40.40 KJ/mol), which could be ascribed to the binding force between the electrons and nucleus is lower than covalent bonding force of lattice. Besides, excellent restorable feature of permittivity after heat-treatment lays a solid foundation for radome materials serviced in high temperature circumstances.Due to the drastic aerodynamic heating effect in supersonic aircrafts, the operational performance of wave-transmitting dielectric ceramics functionalized radomes strongly depends on the temperature and oxidation. In this paper, the evolution of microwave dielectric responses in Si3N4 ceramics via gelcasting over a wide temperature range (25°C∼800°C) is investigated experimentally and theoretically. Specifically, the relative increment rate of real permittivity over evaluated temperature range is 4.46% at 8.2GHz and 8.67% at 12.4GHz, while the imaginary permittivity remains less than 0.06. Taking temperature-dependent polarized bound charge and damping coefficient into consideration, a revised dielectric relaxation model with Lorentz correction for Si3N4 ceramics has been established, which agrees well with evolution of experimental results. Furthermore, the best fitting results indicate that the activation energy of electrons Ea (15.46 ∼17.49 KJ/mol) is less than that of lattice Eb (33.29∼40.40 KJ/mol), ...

Poly-Si TFTs integrated gate driver circuit with charge-sharing structure*

A p-type low-temperature poly-Si thin film transistors (LTPS TFTs) integrated gate driver using 2 non-overlapped clocks is proposed. This gate driver features charge-sharing structure to turn off buffer TFT and suppresses voltage feed-through effects. It is analyzed that the conventional gate driver suffers from waveform distortions due to voltage uncertainty of internal nodes for the initial period. The proposed charge-sharing structure also helps to suppress the unexpected pulses during the initialization phases. The proposed gate driver shows a simple circuit, as only 6 TFTs and 1 capacitor are used for single-stage, and the buffer TFT is used for both pulling-down and pulling-up of output electrode. Feasibility of the proposed gate driver is proven through detailed analyses. Investigations show that voltage bootrapping can be maintained once the bootrapping capacitance is larger than 0.8 pF, and pulse of gate driver outputs can be reduced to 5 μ s. The proposed gate driver can still function properly with positive V TH shift within 0.4 V and negative V TH shift within-1.2 V and it is robust and promising for high-resolution display.